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RISS 인기검색어
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- 저자 : 백용현(Yong Hyun Beak) (검색결과 2 건)
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신예지,권나현,박현애,우현수,백용현,박동석,고형균,Shin, Ye-Ji,Kown, Na-Hyoun,Park, Hyun-Ae,Woo, Hyun-Su,Beak, Yong-Hyeon,Park, Dong-Suk,Koh, Hyung-Kyun 대한침구의학회 2009 대한침구의학회지 Vol.26 No.1
Objectives : This study was performed to categorize and define causes of recurrent peripheral facial nerve palsy. Methods : 54 patients was identified with recurrent peripheral facial nerve palsy among 726 patients who visited the Facial Palsy Center in East-West Neo Medical Center between May 2006 and August 2008. We reviewed the medical records including gender, age, laterality, number of recurrence, primary onset age, interval between recurrences, accompanied disease(e.g. DM, HTN), and axonal loss. Results : Patients whose primary palsy onset was before their second decade had a higher possibility of recurrence and tended to recur more than twice. Double-episode ipsilaterally recurrent group showed definitely worse result of axonal loss compared with non-recurrent group and single-episode ipsilaterally recurrent group. But There was no statistically significant difference between mean axonal loss of the non-recurrent group and single-episode ipsilaterally recurrent group. Conclusions : This study was designed for 54 patients and further studies are necessary.
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MHEMT를 이용한 DC ∼ 45 GHz CPW 광대역 분산 증폭기 설계 및 제작
진진만,이복형,임병옥,안단,이문교,이상진,고두현,백용현,오정훈,채연식,박형무,김삼동,이진구,Jin Jin-Man,Lee Bok-Hyung,Lim Byeong-Ok,An Dan,Lee Mun-Kyo,Lee Sang-Jin,Ko Du-Hyun,Beak Yong Hyun,Oh Jung-Hun,Chae Yeon-Sik,Park Hyung-Moo,Kim Sam-Do 대한전자공학회 2004 電子工學會論文誌-SD (Semiconductor and devices) Vol.41 No.12
In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm. 본 논문에서는 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT (High Electron Mobility Transistor)를 이용하여 DC~45 GHz 대역의 광대역 MIMIC(Millimeter-wave Monolithic Integrated Circuit) 분산 증폭기를 설계 및 제작하였다. MIMIC 증폭기의 제작을 위해 Metamorphic HEMT(MHEMT)를 설계 및 제작하였으며, 제작된 MHEMT는 드레인 전류 밀도 442 mA/mm, 최대 전달컨덕턴스(Gm)는 409 mS/mm를 얻었다. RF 특성으로 fT는 140 GHz fmax는 447 GHz의 양호한 성능을 나타내었다. 광대역 MIMIC 분산 증폭기의 설계를 위해 MHEMT의 소신호 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 MIMIC 분산 증폭기를 설계하였다. 설계된 분산 증폭기는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용하여 제작하였으며, MIMIC 분산 증폭기의 측정결과, DC ~ 45 GHz대역에서 6 dB 이상의 S21 이득을 얻었으며, 입력반사 계수는 45 GHz에서 -10 dB, 출력반사계수는 -7 dB의 특성을 나타내었다. 제작된 분산 증폭기의 칩 크기는 2.0 mm$\times$l.2 mm다.
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