http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
박윤창,홍사욱,송영신 ( Yoon Chang Park,Sa Uk Hong,Young Shin Song ) 한국하천호수학회 1984 생태와 환경 Vol.17 No.3·4
A research for the environmental protection in the natural science campus of Sung Kyun Kwan University which is located at Chun-Chun Dong in Suweon city had been proceeded from June 1982 to September 1983. The actual conditions of the water quality of I1-wol reservoir in front of natural science campus and several places in and nearby the campus were surveyed. Judging from this survey, it was found that the water quality of I1-wol reservoir was suitable for agricultural use without any trouble. However, seasonal fluctuation in the concentration of anions and cations in water was found. Even though the concentration of some cations such as chloride and sulfate did not reach the level of WHO for water or allowable limit of our national water works it shows much higher value than that in all of natural rivers and clean lakes in our country. On the other hand, the number of E. coli in the water of I1-wol reservoir was seasonally fluctuated, that is, a large number was counted in summer and a small number in winter. The average number of E. coli in this water was less than 3,000 per ml all the year round. Therefore, it is regarded as a suitable water for irrigation. The waste water was treated with FeSO₄ or Fe₂(SO₄)₃ㆍ xH₂O in order to eliminate heavy metals such as Hg and Cd dissolved in it. After the ratio of Fe^++ to OH^- in the water was adjusted to 1 : 1.5 by NaOH and then aeration was followed most Cd and Hg ions were eliminated by precipitation. 14 organic substances were detected from the water in the waste water reservoir tank and some of them were easily removed by aeration.
가수분해법에 의한 TiO<sub>2</sub> 피복 운모의 제조(I)
박윤창,김효중,곽중협,서태수,Park, Yoon-Chang,Kim, Hyo-Joong,Kwak, Chung-Heop,Suh, Tae-Soo 한국공업화학회 1997 공업화학 Vol.8 No.5
암모니아수를 이용한 가수분해법에 의해 운모의 이산화티타늄 피복을 시행하여 합성조건의 영향을 조사했다. 운모표면에 균일한 $TiO_2$ 피막을 얻기 위해서는 운모의 입자경이 작고 비표면적이 넓은 쪽이 유리하다. 또한 반응용액상에서 생선된 입자는 운모표면에 유리상태로 부착하여 피막을 불균일화시키므로, 용액상에서의 수화 $TiO_2$ 콜로이드 입자 생성속도를 느리게 제어할 필요가 있다. 본 실험에서 운모의 크기는 $14.7{\mu}m$, 운모 슬러리 용액의 pH는 2.5, $TiOSO_4$ 용액의 F.A.는 291, 반응온도는 $80{\sim}100^{\circ}C$ 정도가 적당하였다. 이상의 결과로부터 균일한 피복을 실현하기 위해서는, 반응온도를 변화시켜 입자의 석출율을 제어하는 일이 필요하다. 이 경우 석출율이 큰 쪽이 균일하고 치밀한 피막을 얻을 수 있었다. 이렇게 하여 얻어진 $TiO_2$ 피복 운모는 $900^{\circ}C$의 소성전후에서 형태에 큰 변화는 없었다. $TiO_2$ hydrate coating on mica in an aqueous solution of $TiOSO_4$ by the hydrolysis using ammonia water studied with emphasis on coating conditions for a uniform coating. For the uniform coating of $TiO_2$ film on mica surface, it was found that smaller mica particles were coated more uniformly compared to larger particles. It was necessary to suppress the rate of formation of hydrated $TiO_2$ particles in solution, which were deposited on mica and generate irregular coating. It was also necessary to control precipitation yield by varying the reaction temperature to obtain uniform coating. More uniform coating was obtained with higher precipitation yield. A uniform dense film was formed when mica particles of average size of $14.7{\mu}m$ is used for mica slurry solution, of which pH is 2.5, and the factor of acidity of $TiOSO_4$ solution is 291, and the solution was kept at $80^{\circ}C$ for 3 hours. The morphology of $TiO_2$ film formed on mica was little affected by firing at $900^{\circ}C$.
박윤창,김효중,곽중협,서태수 ( Yoon Chang Park,Hyo Joong Kim,Chung Heop Kwak,Tae Soo Suh ) 한국공업화학회 1997 공업화학 Vol.8 No.5
암모니아수를 이용한 가수분해법에 의해 운모의 이산화티타늄 피복을 시행하여 합성조건의 영향을 조사했다. 운모표면에 균일한 TiO₂피막을 얻기 위해서는 운모의 입자경이 작고 비표면적이 넓은 쪽이 유리하다. 또한, 반응용액상에서 생성한 입자는 운모표면에 유리상태로 부착하여 피막을 불균일화시키므로, 용액상에서의 수화 TiO₂ 콜로이드 입자 생성속도를 느리게 제어할 필요가 있다. 본 실험에서 운모의 크기는 14.7㎛, 운모 슬러리 용액의 pH는 2.5, TiOSO₄ 용액의 F.A.는 291, 반응온도는 80∼100℃ 정도가 적당하였다. 이상의 결과로부터 균일한 피복을 실현하기 위해서는, 반응온도를 변화시켜 입자의 석출율을 제어하는 일이 필요하다. 이 경우 석출율이 큰 쪽이 균일하고 치밀한 피막을 얻을 수 있었다. 이렇게 하여 얻어진 TiO₂피복 운모는 900℃의 소성전후에서 형태에 큰 변화는 없었다. TiO₂ hydrate coating on mica in an aqueous solution of TiOSO₄ by the hydrolysis using ammonia water was studied with emphasis on coating conditions for a uniform coating. For the uniform coating of TiO₂ film on mica surface, it was found that smaller mica particles were coated more uniformly compared to larger particles. It was necessary to suppress the rate of formation of hydrated TiO₂ particles in solution, which were deposited on mica and generate irregular coating. It was also necessary to control precipita- tion yield by varying the reaction temperature to obtain uniform coating. More uniform coating was obtained with higher precipitation yield. A uniform dense film was formed when mica particles of average size of 14.7㎛ is used for mica slurry solution, of which pH is 2.5, and the factor of acidity of TiOSO₄ solution is 291, and the solution was kept at 80℃ for 3 hours. The morphology of TiO₂ film formed on mica was little affected by firing at 900℃.
ULSI용 Electroplating Cu 박막의 미세조직 연구
박윤창(Yun-Chang Park),송세안(Se Ahn Song),윤중림(Jung-Lim Yoon),김영욱(Young-Wug Kim) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3
electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착 하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111) 방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu 박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation 들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45㎚의 TaN막이 450℃, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111) 우선 배향과 열처리에 의한 결정립 성장 및 defect 감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다. Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at 450℃ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to 450℃, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.