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박건태(G.T.Park),윤재학(J.H.Yoon),정명길(M.K.Jung),김두식(D.S.Kim) 전력전자학회 2003 전력전자학술대회 논문집 Vol.2003 No.7(1)
IGBTs are widely used for the industrial inverters in the mid power range at low voltage (440V -660V) application. Advantageous features of the device are simple gate drive and high speed switching capability. Due to these advantages the application of IGBTs is enlarging into the high power application. However, to increase the power handling capacity at lower input voltage level, the current rating m each bridge arm must be enlarged. Therefore the parallel operation of IGBT devices is essentially needed.<br/> This paper describes the feasible parallel structures of the power circuit for the IT\1d & the high power inverters and introduces the important design condition for the parallel operation of IGBT devices.<br/> To verify feasibility of the IGBT parallel operation, the feature of several IGBT devices (EUPEC, SEMIKRON's IGBT) are investigated and the power stacks are implemented and tested with these devices. The experimental results show the good characteristics for the parallel operation of IGBTs.