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Properties of CIGS thin film developed with evaporation system
김은도(Kim, Eundo),정예슬(Jeong, Ye-Sul),정다운(Jung, Da Woon),엄기석(Eom, Gi Seog),황도원(Hwang, Do Weon),조성진(Cho, Seong Jin) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Cu(In,Ga)Se₂ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) 2.1{times}10^{-7}{sim}3.0{times}10^{-7} Torr, indium (In) 8.0{times}10^{-7}{sim}9.0{times}10^{-7} Torr, gallium (Ga) 1.4{times}10^{-7}{sim}2.8{times}10^{-7} Torr, and selenium (Se) 2.1{times}10^{-6}{sim}3.2{times}10^{-6} Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.