스퍼터링 Mo 도핑 탄소박막의 특성과 유기박막트랜지스터의 게이트 전극으로 응용

김영곤,박용섭,Kim, Young Gon,Park, Yong Seob 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.1

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

탄소나노튜브 양에 따른 CMP-PLA 방열 소재의 특성

김영곤,Kim, Young-Gon 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.12

In this study, we proposed CMP-PLAs to replace the Al heat sinks as heat sink materials, and investigated heat dissipation characteristics of the LED lighting devices using them. The crystallinity of the proposed CMP-PLA heat sinks decreased with increasing carbon nanotube contents in CMP-PLA. However, the thermal conductivity was improved with the increase of the carbon nanotube contents. The heat dissipation characteristics of the LED lighting devices using CMP-PLA heat sinks was improved with increasing carbon nanotube contents in CMP-PLA. For the LED lighting devices using CMP-PLA heat sinks with 40% carbon nanotube contents, the initial temperature measured at the heat sink plate was $27^{\circ}C$, which increased as time, and it was saturated around $56^{\circ}C$ after an hour. The LED lighting devices using CMP-PLA heat sinks are expected to be functional materials that can reduce their weight and improve their electric properties, compared to those using existing Al heat sinks.

홀소자 전류센서를 위한 니켈강 코어 소재 특성

김영곤,Kim, Young-Gon 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8

In this research, the structural, physical and electrical characteristics of Ni-Fe core chosen to minimize the errors of the Hall current sensors were investigated and Hall current sensor using Ni-Fe core was fabricated. In the result, the fabricated Ni-Fe sample exhibited the maximum hardness about 29.5 GPa and the low friction coefficient about 0.35, and electrical resistivity over $90mOhm{\cdot}cm$. And also Hall current sensor using the fabricated Ni-Fe core showed linear current-voltage properties for DC current at $25^{\circ}C$ temperature.

SiC 용액 성장을 위한 수치 시뮬레이션의 최적화

김영곤,최수훈,이채영,최정민,박미선,장연숙,정성민,이명현,김영희,서원선,이원재,Kim, Young-Gon,Choi, Su-Hun,Lee, Chae-Yung,Choi, Jeung-Min,Park, Mi-Seon,Jang, Yeon-Suk,Jeong, Seong-Min,Lee, Myung-Hyun,Kim, Younghee,Seo, Won-Seon,Lee, Wo 한국결정성장학회 2017 한국결정성장학회지 Vol.27 No.3

본 연구는 SiC 용액 성장에서 Cr 40 %가 첨가된 Si melt 내부의 용액과 탄소흐름의 변화를 수치적으로 분석하여 장시간 성장과 고품질의 SiC 단결정을 얻기 위한 최적공정 조건의 설계를 목적으로 진행하였다. 수치 시뮬레이션으로는 crystal growth simulator ($CGSim^{TM}$, STR Group Ltd.)가 사용되었다. 결과적으로, 성장온도, 종자정축과 도가니축의 회전속도 및 성장 시 종자정의 위치에 따라 melt내부의 용액 흐름과 탄소흐름의 속도 및 방향이 변화함으로써 더 균일한 온도구배를 형성하여 안정적인 성장이 이루어지는 조건을 확인하였다. 그러므로, 성장조건들을 조절함으로써 시뮬레이션 상에서 실험조건의 최적화가 가능하였고 향후 실제 실험에서도 많은 도움이 될 것으로 예상된다. In this study, numerical simulation was performed to focus on optimized process condition for obtaining a long-term growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator ($CGSim^{TM}$, STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.

딥러닝을 이용한 기흉 폐렴의 검출과 분류

이종근(Jong-keun Lee),김선진(Seon-jin Kim),안재형(Jae-hyung Ahn) 한국정보통신학회 2019 한국정보통신학회 종합학술대회 논문집 Vol.23 No.2

("의방류취(醫方類聚)" 를 통한 "이상속단방(理傷續斷方)" 의 내용 연구

김영곤,안상우,Kim, Young-Gon,Ahn, Sang-Woo 한국한의학연구원 2007 한국한의학연구원논문집 Vol.13 No.3

This study is on the characteristics of LiSangSockDanBang(理傷續斷方). Through this study, the characteristics of LiSangSockDanBang(理傷續斷方) can be oganized as the following: First of all, in LiSangSockDanBang, the treatment of traumatic injury is consisted of the fourteen steps. This fourteen steps is resorted by four steps. ; Washing(洗藥法), Standin in line(整復法), Using an external application(外治法), Using an internal medicine(內服法). This is LiSangSockDanBang's major characteristics. Because of this contents, LiSangSockDanBang is quoted on EuiBangLyuChi(醫方類聚). The first treatment of traumatic injury is Wahing. Wahing is not only sterilizing a wounded region but pushing out the PungSa(風邪). So, to avoid a infection of a tetanus, washing medicine consist of the herbs, that push out the PungSa(風邪). LiSangSockDanBang has high level of surgery. In 1456, YoungLyuGumBang(永類鈐方), has no more level than surgery's in LiSangSockDanBang, is reprinted. This fact means that the surgery is used frequently in those days. In this scientific backing, an operation needle, that described in ChiJongJiNam(治腫指南) and ChiJongBiBang(治腫秘方), are written by Lim UnGook(任彦國), is used frequently, too. In LiSangSockDanBang, the major external applications are HookLyongSan(黑龍散) and PungLyuSan(風流散). In case of open wound, the HookLyongSan is used but in closed wound, PungLyuSan is used. The internal medicine has three applications. ; Removing extravasated blood(瘀血), Catharsis(通利大小便), Supplementation(補氣血).

7.5 W CMP-PLA 방열판을 적용한 LED 등기구 특성

김영곤,Kim, Young-Gon 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.12

In this paper, the characteristics of a carbon nanotube composite heat sink proposed to replace the advanced Al heat sinks for LED lighting devices were studied. Proposed CMP-PLA heat sink was made by mixing 20~70 wt% carbon nanotube, 20~70 wt% bio-degradable polymer of melt-blended PLA (poly lactic acid) and PBS (poly butylene succinate) and PLA nucleating agents composed of the mixture of soybean oil and biotites, at $150{\sim}220^{\circ}C$ with 1,000~1,500 rpm. Optical and electric characteristics of 7.5 W LED lighting devices using heat sinks with such prepared CMP-PLA were investigated. And, the properties of the heat, which was not released from the CMP-PLA type heat sinks, was also investigated. The color temperature of LED lighting devices using the CMP-PLA heat sinks was 5,956 K, which is x= 0.32 and y= 0.34 in the XY chromaticity, and the color rendering index was 75. The luminous flux and the luminous efficiency of LED lighting devices using the CMP-PLA heat sinks was 540.6 lm and 72.68 lm/W respectively. Measured initial temperature of the heat sinks was $27^{\circ}C$, and their temperature increased as time to be saturated at $52^{\circ}C$ after an hour.

기업의 생존전략으로서의 EDI도입

김영곤,Kim, Yeong-Gon 한국전자정보통신산업진흥회 1994 電子振興 Vol.14 No.11

객체기반 소프트웨어 프로세스 프로그래밍을 위한 SimFlex 언어의 구조

김영곤,이명준,강병도,Kim, Young-Gon,Lee, Myung-Joon,Kang, Byeong-Do 한국정보처리학회 1997 정보처리논문지 Vol.4 No.11

The software Process can be defined as the set of activities, rules, procedures, techniques and tools used within the production of software. A software process model is a conceptual representation of a real world software Process and can be described by process programming languages. In this paper, we present the language constructs of SimFlex designed for object-based software process programming. The design of SimFlex is based on the object concept, so that it can model complex software processes concisely both in syntax and semantics. Since the language constructs of SimFlex are derived from the analysis of major PSEEs and their associated process programming languages, SimFlex includes the core characteristics required for a desirable object-based process programming language. In addition, SimFlex is designed to act as a template software process definition language which could be included in specific PSEEs through customization appropriate to those PSEEs. 소프트웨어 프로세스는 소프트웨어의 생산에 사용되는 행위, 규칙, 절차, 기법, 도구의 집합체로 정의할 수 있다. 소프트웨어 프로세스 모형은 실세계 소프트웨어 프로세스의 개념적 표현이며 프로세스 프로그래밍언어로 기술될 수 있다. 본 논문에서는 객체기반 소프트웨어 프로세스 프로그래밍을 위해 설계된 SimFlex 언어구조를 제시한다. SimFlex의 설계는 객체의 개념에 기반을 두고 있으므로 문법적으로나 구문적으로 복잡한 소프트웨어 프로세스를 간결하게 모형화할 수 있다. SimFlex의 언어구조는 주요 프로세스 중심 소프트웨어 개발환경 및 연관된 프로세스 프로그래밍 언어의 분석으로부터 도출되었으므로 SimFlex는 바람직한 객체기반 프로세스 프로그래밍 언어를 위해 필요한 핵심적인 특성을 포함한다. 더욱이 SimFlex는 적절한 적합화를 통하여 특정 프로세스 중심 소프트웨어 개발환경에 포함될 수 있는 기반 프로세스 프로그래밍 언어로 동작할 수 있도록 설계되었다.

Functional Characteristics of Cytoplasmic and Periplasmic Photobacterium leiognathi CuZnSOD (PSOD) in Escherichia coli SOD Double Mutants

김영곤,양미경,Kim, Young-Gon,Yang, Mi-Kyung The Microbiological Society of Korea 1994 미생물학회지 Vol.32 No.2

Photobacterium leiognathi CuZuSOD(PSOD)의 부세포성 분포에 따른 방어효과가 paraquat, 열 쇼크, 과산화수소 그리고 $CuSO_4$의 처리시 각각 조사되었다. 서로 달리 periplasm내에 분포하는 PSOD와 세포질에 분포하는 PSOD 사이의 생리적 특성은 본 연구에서는 조건에 따란 차이를 보였다. Paraquat나 $H_2O_2$ 처리시에는 periplasm에 SOD를 발현하는 세포에서 세포질내에 SOD를 분포하는 경우보다 약간 방호효과가 나았으며 SOD 발현 정도는 이와 일관되게 아주 중요한 변화를 보였다. 그러나 열 쇼크와 $CuSO_4$의 처리시는 각각 이런 현상이 역으로 나타났다. Protective effects on subcellular localization of Photobacterium leiognathi CuZnSOD(PSOD) were examined in Escherichia coli SOD mutant cells on the treatment of paraquat, heat shock $(37^{\circ}C{\to}42^{\circ}C{\to})$, hydrogen peroxide and copper sulfatem respectively. The physiological characteristics of the periplasmic and cytoplasmic PSOD localized differently are dependent on the conditions in this experiment. Cells expressing SOD periplasmically in the treatments of paraquat and $H_2O_2$ respectively were somewhat better protective effects cells expressiong SOD cytoplasmically at comparable level and SOD expression level showed, the most consistently important variable. However, this was reversed in the treatments of heat shock and $CuSO_4$, respectively.