http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Effects of the Al2O3 interlayer in ZnO thin-film transistors fabricated via atomic layer deposition
김성현,정광석,이가원,이희덕 한국정보디스플레이학회 2013 Journal of information display Vol.14 No.2
In this paper, electrical analysis was carried out on ZnO thin-film transistors (TFTs) to investigate the effects of the Al2O3 interlayer between the ZnO active-layer and the SiO2 gate insulator. The Al2O3 interlayer was deposited via atomic layer deposition. From the electrical analysis, it was found that the Al2O3 interlayer improves the electrical properties, such as the subthreshold slope and on/off-current ratio. The stability degradation under positive bias stress, however, is severe in TFTs with an Al2O3 interlayer. According to the crystallographic view, the crystal structures in a ZnO film on Al2O3 are prone to align in the (002) direction compared with ZnO on SiO2, and can attract more oxygen ions because of the Zn polar, which degrades the stability of devices.
김성현(S. H. Kim),서성렬(S. Y. Seo),정순종(S. J .Jung),전만수(M. S. Joun) 한국소성가공학회 2010 한국소성가공학회 학술대회 논문집 Vol.2010 No.5
In this paper, finite element approach is applied to reveal causes of punch fracture occurred in cold forging of a simple axi-symmetric part. Finite element results show that the forging process has nothing to do with the punch fracture and thus we try to find the cause from the ejection process. The mechanical situation during the ejection process is considered as the same with that at the final stroke of the forging process only except that the interfacial stress along the punch and material is free. We can predict the interference between punch and material, which first causes damage on the coated die surface leading to final fracture of the punch.
CdSe 나노입자 형광층 구조에 따른 백색 LED 발광 특성 연구
정원근 ( Won Keun Chung ),유홍정 ( Hong Jeong Yu ),박선희 ( Sun Hee Park ),전병희 ( Byung Hee Chun ),김성현 ( Sung Hyun Kim ) 한국화학공학회 2011 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.49 No.3
TOPO/TOP capped CdSe nanoparticles were synthesized via thermal-solvent method. The 540nm green and 620 nm red emitting CdSe nanoparticles were obtained by controlling the reaction time and temperature. Phosphor conversion white LED was produced combining a 460 nm emitting InGaN LED chip as an excitation source with 540 and 620 nm CdSe nanoparticles as phosphors. The single or double phosphor layer was fabricated by mixing with epoxy, and investigated the effects on the luminous properties of the white LED. The single phosphor layer white LED showed 5.78 lm/W with CIE of (0.36, 0.45) in reddish white, and the double phosphor layer white LED showed 7.28 lm/W with that of (0.32, 0.34) in pure white at 20 mA. When the 400 nm near-UV LED was applied to optical pumping source, the luminous efficiency of white LED was enhanced to 8.76 lm/W.