천막상부 뇌수막종 절제후 단기간에 발생한 두개인두종 - 증례보고 -

김성수,고용,이형중,김영수,오성훈,김광명,오석전,Kim, Sung Su,Ko, Yong,Yi, Hyeong Joong,Kim, Young Soo,Oh, Seong Hoon,Kim, Kwang Myung,Oh, Suck Jun 대한신경외과학회 2001 Journal of Korean neurosurgical society Vol.30 No.10

Authors experienced a unique case of craniopharyngioma which had evolved rapidly after 4 years of total resection for supratentorial meningioma. A 58-year-old woman presented with headache and visual deterioration. Previously, she had undertaken surgical removal of frontal convexity meningioma 4 years ago and had been well without any postoperative sequelae thereafter. Brain magnetic resonance imaging demonstrated a newly developed suprasellar mass. Pertinent operative procedure was performed and histological verification was made as an adamantinomatous craniopharyngioma. She has been showing unremarkable clinical course up to date. Possible pathogenic mechanisms of de novo development of craniopharyngioma are disscussed with review of case.

헬기 장착 전방관측적외선장비 좌표지향시스템 개발

김성수,신용산,김성수,권강훈,Kim, Sung-Su,Shin, Yong-San,Kim, Sung-Soo,Kwon, Kang-Hun 한국군사과학기술학회 2009 한국군사과학기술학회지 Vol.12 No.6

FLIR(Forward Looking Infrared) geo-pointing is a function that helps pilots to see a target within the field of view under all coordinates and attitudes of helicopter. Geo-pointing controls FLIR LOS(line of sight) toward known target coordinates by using azimuth and elevation angles calculated from several information such as helicopter coordinates and attitudes, a FLIR position from a GPS antenna, and target coordinates. Geo-pointing performance has been tested and evaluated on the ground to save flight test costs and ensure flight safety. In this paper, design and implementation of a geo-pointing system is described with the results of performance test conducted on the ground test system.

논문 : 김세화 교수의 반론과 활성 경로 이론의 제한 및 확장

김성수 ( Sung Su Kim ) 한국논리학회 2015 論理硏究 Vol.18 No.2

인과 관계가 결과와 원인 간의 반사실적 의존 관계로 분석될 수 있다는 직관은 설득력이 있다. 활성 경로 이론은 단순한 형태의 반사실적 인과이론의 문제점을 피하면서도 이 직관을 유지하기 위해 제안된 이론이다. 하지만 이 이론 역시 심각한 반례에 직면한다. 김세화 교수는 최근의 논문에서 이러한 반례를 반박하고자 제시된 기존의 해결책이 갖는 문제점을 설득력 있게 비판하였다. 이 논문은 김세화 교수의 비판을 논의하고 더 나아가 활성 경로이론에 대한 반례를 극복할 수 있는 또 다른 해결책을 논의한다. 특히 활성 경로 이론의 적용 범위를 제한하고 이렇게 제한된 이론을 다시 확장하는 방식을 제시함으로써 활성 경로 이론을 그 반례로부터 방어하는 방법을 제안한다. The idea that an effect counterfactually depends on its cause is simple and intuitive. However, this simple idea runs into various difficulties. The active route account, in order to avoid the difficulties, analyzes causation in terms of counterfactual dependence under certain control. In her recent article, Seahwa Kim criticizes Sungsu Kim’s earlier attempt to defend the active route account from its counterexamples. Her criticisms are convincing, and defenders of the active route account or counterfactual analysis of causation in general need another defense. In response, a two-step defense is proposed. First, the scope of the active route account is restricted to ‘proximate’ causal relation. Second, a control over factors that are in proximate causal relation is offered to figure out ‘distant’ causal relation. The result is that with proper control, an effect indeed counterfactually depends on its cause.

Pt/TiO₂ 촉매의 H₂ SCR 반응 특성에 관한 연구

김성수,최현진,홍성창,Kim, Sung Su,Choi, Hyun Jin,Hong, Sung Chang 한국공업화학회 2010 공업화학 Vol.21 No.1

$TiO_2$를 담체로 한 Pt계 촉매를 이용하여 저온($80{\sim}150^{\circ}C$) 영역에서 적용될 수 있는 $H_2$ SCR의 촉매 반응 특성을 조사하였다. 실험은 반응가스 중 수분, 산소, 촉매의 소성온도, $H_2$/NOx 몰비, 공간속도에 대하여 수행하였다. Pt/$TiO_2$를 이용한 $H_2$ SCR 반응에서 수분은 inhibition으로 작용하였으며, 배가스 중 산소 농도가 희박할수록 반응활성이 증가하는 경향을 나타내었다. 하지만 산소가 존재하지 않을 때에는 NOx와 $H_2$가 반응하여 $NH_3$ slip이 발생하였다. 또한 촉매의 상전이 문제에 의하여 $600^{\circ}C$ 이하에서 소성하는 것이 가장 유리하였으며, $H_2$/NOx 몰비가 증가할수록 반응 활성이 증가하였다. 하지만 $H_2$ slip은 몰비가 증가하여도 $H_2$가 $H_2O$로 산화되어 나타나지 않았다. This work investigated the catalytic reaction characteristics of $H_2$ SCR applied at low temperature ($80{\sim}150^{\circ}C$) using Pt catalyst supported on $TiO_2$. The experiments were performed in terms of $H_2O$, $O_2$ in reaction gas, calcination temperature of the Pt catalyst, $H_2$/NOx mole ratio, space velocity. $H_2O$ was an inhibitor of reaction on $H_2$ SCR using Pt catalyst, catalytic performance increased as $O_2$ concentration decreased. Nevertheless, $NH_3$ slip generated by the reaction between NOx and $H_2$ in the absence of $O_2$. While it was effective to calcine less than $600^{\circ}C$ by phase transition and the catalytic performance increased as $H_2$/NOx mole ratio increased. However, $H_2$ slip was not observed at that increase mole ratio by $H_2$ oxidation to $H_2O$.

고품질 색재현을 위한 오프셋 인쇄공정의 최적화에 관한 연구(II) - 제판과 인쇄공정을 중심으로 -

김성수,강상훈,Kim, Sung-Su,Kang, Sang-Hoon 한국인쇄학회 2007 한국인쇄학회지 Vol.25 No.2

Producing printing plate is essential progress to do offset printing. In this Film-less period, the more PS plate becomes extinct, the more the age of the Plate-Making of Exposure declines the place to stand. To do offset printing, the CTP (Computer to Plate) is taking a place of PS plate that covers speed, quality and economical problems. The biggest advantage of using CTP is that laser directly goes to the plate, thus there are no dust from the Plate-Making of Exposure. It is also theoretically able to print $200lpi{\sim}300lpi$ as well as print 1751pi, because it has over 2400dpi resolution. The high quality printing could be available inside of the country, if printing machine keeps the optimum condition in offset printing. The CTP has many advantages, however there is a difficulty for the operators to preserve the equipment. The actual circumstance is that they cannot make a decision about how many dots need to be generated, and also it is necessary to know how to establish the setup at RIP on CTP to make the optimum condition output. If offset printing machine keeps the optimum condition, it would be able to print up to high quality printing however it is hard to comment what is the optimum condition for the printing machine. Anyone could say easy subjectively that machine is in the optimum condition, however it is objectively hard to estimate by number. In this research GATF / Plate Test target used to analyze the image and to make numerical value of the optimum condition of the CTP. It also used GATF / The sheep fed test printing 5.0 to know the density of the color representation, dot gain and gray balance for the optimum condition of the print machine. The purpose of this research is to represent the ISO 12647-2 which is the international standard with domestic printing equipments.

망간계 금속산화물을 이용한 저온 선택적 촉매 환원 반응에서 NO₂와 NH₃ 배출

김성수,홍성창,Kim, Sung Su,Hong, Sung Chang 한국공업화학회 2007 공업화학 Vol.18 No.3

망간계 금속산화물을 이용한 저온 선택적 촉매 환원 반응에 대하여 연구하였다. 망간계 금속산화물은 $200^{\circ}C$ 이하의 저온에서 우수한 탈질 특성을 보인다. 온도에 따른 $NH_3/NOx$ 몰비 변화 실험을 통하여 미반응 암모니아의 배출은 몰비가 증가하고 온도가 감소할수록 증가하였으며, $NO_2$의 발생은 반대의 현상을 보였다. $NO_2$는 NO가 촉매 표면에 흡착된 후 nitrate종으로 산화되어 생성되는 것으로 보인다. 촉매 표면에 생성된 nitrate종과 흡착된 암모니아가 반응하기 때문에 $NH_3/NOx$ 몰비 1.0 이상에서도 미반응 암모니아의 배출이 없었다. 담지된 금속산화물의 영향은 Zr은 산화상태를 증가시켜 $NO_2$의 배출이 증가하였으며, Ce를 첨가시킨 경우 $NO_2$ 발생량이 감소하였다. 그러나 금속산화물의 첨가는 전체적으로 NOx 전환율을 감소시켰다 The catalytic behavior of the manganese oxides was studied for the selective catalytic reduction with ammonia at a low temperature condition under $200^{\circ}C$. Outlet unreacted ammonia increases with decreasing temperature and increasing $NH_3/NOx$ mole ratio, however $NO_2$ shows an opposite result. $NO_2$ is generated by the adsorption of NO on the catalyst and the following oxidization to nitrates. Unreacted NH3 slip is not observed even at the $NH_3/NOx$ feed ratio above 1.0 due to the reaction between formed nitrates on the catalyst and adsorbed ammonia. The addition of Zr increases $NO_2$ generation, whereas the addition of CeO2 on the catalyst decreases $NO_2$ generation. Furthermore, the additon of the metal oxide induce DeNOx efficiency to reduce.

중성자 조사된 SiC Schottky Diode의 온도 의존 특성

김성수,구상모,Kim, Sung-Su,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.10

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

중성자 조사에 따른 SiC Schottky Diode의 전기적 특성 변화

김성수,강민석,조만순,구상모,Kim, Sung-Su,Kang, Min-Seok,Cho, Man-Soon,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.4

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

ZnO 나노선 트랜지스터를 기반으로 하는 Al 나노입자플로팅 게이트 메모리 소자의 특성

김성수,조경아,김상식,Kim, Sung-Su,Cho, Kyoung-Ah,Kim, Sang-Sig 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.4

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

고내압 SiC-IGBT 소자 소형화에 관한 연구

김성수,구상모,Kim, Sung-Su,Koo, Sang-Mo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.11

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.