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40Gbps급 (4X10) VCSEL Array 구동기
김형수,정성재,김두근,이희현,최영완 중앙대학교정보통신연구소 2001 정보통신연구소논문집 Vol.3 No.2
본 논문에서는 VCSEL(Vertical Cavity Surface Emiting Laser)을 채널당 1Gbps로 동작시키고, DC Bias 전류 변화폭과 RF Modulation 전류 변화폭의 조절이 가능한 구동 드라이버를 현대 0.35㎛ 2-Poly 4-Matel CMOS공정을 이용하여 설계했다. In this paper, we present a 40 Gb/s VCSEL driver (4 x 10 channels, 1 Gbps/ch) designed and fabricated in HYNIX 0.35㎛ 2-poly 4-matel CMOS technology. The CMOS driver designed for a free space optical interconnect system is consisted of two NMOS for driving a VCSEL and protection circuit rejecting influence of electro-static discharge (ESD) or unexpected input signal with several tens voltage amplitude. Two NMOS with CMOS channel length of 0.4㎛ and width of 100 ㎛ are used for adjusting dc bias current from 0 to 27 mA and ac modulation current from 0 to 13.8 mA. Protection circuit is made of two diodes. The purpose of the protection circuit is to permit the input modulation voltage range only from 5 to 5 V.