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고온작동 수퍼커패시터용 이온성 액체 전해질에서의 흄드 실리카의 효과
김동원,정현영,Kim, Dong Won,Jung, Hyunyoung 한국재료학회 2018 한국재료학회지 Vol.28 No.1
The demand for energy storage devices capable of operating at high temperatures is increasing. In order to operate at high temperatures, a device must have excellent thermal stability and no risk of explosion. Ionic liquids are electrolytes that satisfy the above conditions, and studies on improving their performance have attracted great interest. Here, we report the results of a study on the fabrication of a supercapacitor that has a composite electrolyte prepared by dispersing fumed silica in an ionic liquid. The fumed silica filler exhibits improved ionic conductivity and lower interfacial resistance. In particular, the silica nanoparticles with diameters of 10 nm exhibit better electrochemical properties than fillers of other diameters and have excellent device performance of 33 times higher than the pristine ionic liquid at high temperatures. This study can be used to improve the electrolytes of electrochemical devices, such as the next generation battery or lithium ion battery.
김동원,Kim, Dong-Won 대한석유협회 1994 석유와 에너지 Vol.1994 No.3
금년에는 유가연동제 시행과 함께 유가 자유화, 석유류수출입자유화, 신규참입제한 완화등 석유산업 전반에 대한 자유화 방안은 적극 검토할 계획이다.
김동원,Kim, Dong-Won 대한석유협회 1995 석유와 에너지 Vol.1995 No.6
이 자료는 '95춘계 석유정책 세미나 발표자료로 준비되었던 것으로 필자들의 양해를 얻어 전재함<편집자 주>
김동원,송해영,황명천,유해일,Dong Won Kim,Hae Young Song,Hwang, Myeong Cheon,Hae Il Ryu 대한화학회 1981 대한화학회지 Vol.25 No.5
콩깻묵과 들깻묵을 각각 인산화 및 술폰화하여 이온교환체를 만들었다. 이렇게 만든 40-60 매쉬의 이온교환체를 사용하여 여러농도의 염산과 알코올 혼합용매에서 이온교환용량, 몇가지 금속 이온에 대한 흡착능 및 분포계수를 알아보았다. 깻묵 이온교환체의 이온교환용량은 4 meq/g 이상이었으며, 깻묵 이온교환체에 대한 금속이온은 일반적으로 pH가 증가함에 따라 증가하였다. 특히 술폰화된 콩깻묵 이온교환체에서는 Co(II)가 높은 흡착을 나타내었다. 또한 분포계수는 여러 금속에 있어서 알코올 용매분자의 탄소수가 증가하거나 히드록시기의 수가 증가함에 따라 감소한다. 이는 알킬기의 입체이성 현상이나, 리간드의 인력이 크게 작용했기 때문인 것으로 보인다. 만들어진 콩깻묵 이온교환체는 시판되는 이온교환체와 거의 비슷한 이온교환능을 가지고 있음을 알 수 있었다. The soy bean oil cakes and perillar oil cakes are phosphorylated and sulfonated to be used as ion exchangers. There 40-60mesh cations exchanges have bean tested on the capacity of ion exchange, the adsorption and distribution coefficients of several metal ions in various concentrations of binary solution mixture, hydrochloric acid and alcohol. From there experiments, the following results are concluded. The ion exchange capacity of ion exchangers are higher than 4 meq/g. The adsorption of metal ions on ion exchangers are increased generally as pH is increased, especially Co(II) on sulfonated soy bean oil cake. The distribution coefficients of various metal ions are decreased as the number of branches of carbon and hydroxyl groups are increased. There show that the stereo-isomerism of alkyl group or attraction of ligand have influenced upon various metal ions. Consequently it is deduced that there ion exchanges from soy bean oil cake and perillar oil cake resemble in properties to current ion exchangers.
A Study on the Reflow Characteristics of Cu Thin Film
김동원,권인호,Kim, Dong-Won,Gwon, In-Ho Materials Research Society of Korea 1999 한국재료학회지 Vol.9 No.2
Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.