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용액 공정으로 제작된 주석-아연 산화물의 조성 변화에 따른 특성 변화 분석
김동림,임유승,정웅희,김현재,Kim, Dong-Lim,Rim, You-Seung,Jeong, Woong-Hee,Kim, Hyun-Jae 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.6
In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from $SnO_2$ to ZnO in SnZnO lattice. With the $SnO_2$-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 $cm^2/Vs$ and $2{\times}10^8$ were achieved, respectively.
김동림(Dong Lim Kim),김건희(Gun Hee Kim),장현우(Hyun Woo Chang),안병두(Byung Du Ahn),이상렬(Sang Yeol Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of 9.684×10¹? ㎝?³, resistivity of 2.54×10?³ Ω㎝, and mobility of 25.37 ㎠/Vs. Photoluminescence (PL) spectra of As doped n-type ZnO thin films reveal neutral acceptor bound exciton (A?X) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy (E<SUB>A</SUB>) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X -ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, As<SUB>zn</SUB>-2V<SUB>zn</SUB>, in which the As substitutes on the Zn site, rather than simple model, Aso. in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an un doped n-type ZnO layer on an As doped p-type ZnO layer.