Plasma Display Panel용 기판 유리용융체의 내화물 침식

김기동,정현수,김효광,Kim, Ki-Dong,Jung, Hyun-Su,Kim, Hyo-Kwang 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.1

For self-developed alkali-alkaline earth-silicate and commercial glass melts for plasma display panel substrate, the corrosion behavior of fused casting refractory consisting of $Al_2O_3-ZrO_2-SiO_2$ was examined at the temperature corresponding to $10^2\;dPa{\cdot}s$ of melt viscosity by static finger methode. The corroded refractory specimens showed a typical concave shape due to interfacial convection of melts at their flux line. However, the corrosion thickness by commercial glass melts was $6\sim10$ times comparing to that by the self?developed melts. From the view point of the glass composition and the role of alkaline earth in glass network, it was discussed the effect of alkali/alkaline earth diffusion and temperature on the refractory corrosion.

활성탄소의 산 , 염기 특성에 관한 연구

김기동,박수진,이재락,송해영 ( Ki Dong Kim,Soo Jin Park,Jae Rock Lee,Hae Young Song ) 한국공업화학회 1997 한국공업화학회 연구논문 초록집 Vol.1997 No.0

Plasma Display Panel용 기판 유리의 조성과 성질

김기동,정우만,권성구,최세영,Kim, Ki-Dong,Jung, Woo-Man,Kwon, Sung-Ku,Choi, Se-Young 한국세라믹학회 2006 한국세라믹학회지 Vol.43 No.5

For substrate glass applied to PDP (Plasma Display Panel), it has been developed many glass compositions that have to not only meet the specifications of PDP but also satisfy the float process as production technology. In the present work several compositions with no deformation at PDP processing temperature and thermal expansion coefficient of $83{\sim}9{\times}10^{-7}/K$ were designed. Based on viscosity at high temperature and liquidus temperature for those compositions, three candidate compositions named T-2, T-4, T-6 were selected finally. It was examined additionally that thermal shrinkage at PDP processing temperature and visible transmittance. The properties of T-series were compared with those of commercial glasses and discussed from the view point of PDP device and glass production.

중앙-채널 이중게이트 MOSFET의 양자역학적 모델링 및 시뮬레이션 연구

김기동,원태영,Kim, Ki-Dong,Won, Tae-Young 대한전자공학회 2005 電子工學會論文誌-SD (Semiconductor and devices) Vol.42 No.7

본 논문에서는 결합된 슈뢰딩거-푸아송 방정식과 전류연속방정식을 셀프-컨시스턴트하게 계산함으로써, 나노-스케일 center-channel (CC) double-gate (DG) MOSFET 디바이스의 전기적 특성 및 구조해석에 관한 연구를 시행하였다. 10-80 nm 게이트 길이의 조건에서 수행한 CC-NMOS의 시뮬레이션 결과를 DG-NMOS 구조에서 시행한 시뮬레이션 결과와의 비교를 통하여 CC-NMOS 구조에서 나타나는 CC 동작특성 메커니즘과, 이로 인한 전류 및 G$_{m}$의 상승을 확인하였다. 문턱 전압 이하 기울기, 문턱 전압 롤-오프, 드레인 유기 장벽 감소의 파라미터를 통하여 단채널 효과를 최소화하기 위한 디바이스 최적화를 수행하였다. 본 나노-스케일 전계 효과 트랜지스터를 위한 2차원 양자역학적 수치해석의 관한 연구를 통하여, CC-NMOS를 포함한 DG-MOSFET 구조가 40나노미터급 이하 MOSFET 소자의 물리적 한계를 극복하기 위한 이상적인 구조이며, 이와 같은 나노-스케일 소자의 해석에 있어서 양자역학적 모델링 및 시뮬레이션이 필수적임을 알 수 있었다. The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

제약 만족 기법을 이용한 조선 산업에서의 탑재 일정 생성에 관한 연구

김기동,장용성,Kim, Ki-Dong,Jang, Yong-Sung 강원대학교 산업기술연구소 1999 産業技術硏究 Vol.19 No.-

The dock is the most important resource in shipbuilding yard. Among the shipbuilding schedules, the ship erection schedule in a dock is preferentially built. As results of it, the other schedules(machining in plants, block assembly, pre-painting, pre-rigging, painting and etc) are made. In this study, ship erection scheduling is formulated using ILOG Scheduler. This study is to develop a new problem solving method for ship erection to make an effective schedule based on Constraint Satisfaction Technique(CST).

Float 공법을 고려한 Plasma Display Panel용 기판유리 용융체의 특성

김기동,정우만,정현수,권성구,최세영,Kim, Ki-Dong,Jung, Woo-Man,Jung, Hyun-Su,Kwon, Sung-Ku,Choi, Se-Young 한국세라믹학회 2006 한국세라믹학회지 Vol.43 No.7

In order to examine the working condition of melts in tin bath of float process it was investigated Sn diffusion behavior and solidification rate of melts for alkali-alkaline earth-silica PDP substrate glasses such as commercial CaO rich CS-77 glass, commercial $Al_2O_3$ rich PD-200 glass and self developed $SiO_2$ rich T-series (T-2, T-4, T-6) glasses. In the case of Sn depth and concentration created in glass surface by ion exchange between Sn and alkali, T-series showed lower value than CS-77, especially T-2 is more excellent than PD-200. The solidification rate of melts expressed by cooling time between $log{\eta}=4\;and\;7.6dPa{\cdot}s$ was low for T-series comparing with CS-77 and PD-200. Therefore, it was concluded that T-series is desirable considering forming condition in the tin bath of the float process.

포스터 발표 - 고분자공업분과 : 활성탄소의 산 , 염기 특성에 관한 연구

김기동,박수진,이재락,송해영 ( Ki Dong Kim,Soo Jin Park,Jae Rock Lee,Hae Young Song ) 한국공업화학회 1997 한국공업화학회 연구논문 초록집 Vol.1990 No.3

낙석방지울타리의 성능평가 II: 성능평가

김기동,고만기,김달성,한기장,Kim, Kee Dong,Ko, Man Gi,Kim, Dal Sung,Han, Ki Jang 대한토목학회 2015 대한토목학회논문집 Vol.35 No.1

본 연구는 낙석방지울타리의 성능평가에 관한 두 개의 동반논문 중에서 두 번째 논문이다. 동반논문에서는 낙석방지울타리의 성능평가에 필요한 성능평가기준을 제시하였고 본 논문에서는 동반논문에 제시된 성능평가기준을 이용하여 국내 낙석방지울타리의 성능평가를 수행하였다. 고속도로용 낙석방지울타리는 50kJ의 낙석이 발생하는 장소에서 적절하게 낙석을 방어하고 50kJ 정도의 낙석이 충돌한 직후에도 차량 통행을 방해하지 않을 것으로 평가되었다. 그러나 유럽지침의 수준으로 50kJ의 낙석에너지를 항상 소산시키기 위해서는 아래에서 8번째 와이어로프까지 와이어로프의 간격을 200mm로 조정하고 간격유지대를 연결하여야 한다고 판단되었다. 그리고 간격유지대가 없는 국도용 낙석방지울타리는 상당히 작은 낙석충돌에너지에 대해서도 낙석의 관통가능성이 높기 때문에 고속도로용과 같이 간격유지대를 설치할 필요가 있다고 파악되었다. This is the second of two companion papers that describe the performance assessment for flexible rockfall protection systems. Described in a companion paper is the criteria to assess the performance of flexible rockfall protection systems. In this study the performance assessment of domestic rockfall protection fences was implemented using the criteria suggested in the companion paper. It was investigated that the rockfall protection fences for express highways performed well to resist the rockfall energy of 50kJ and the deformed rockfall protection fences right after impacting would not obstruct the vehicle traffic. However, to dissipate the rockfall energy of 50kJ with the level of European standards constantly, the spacing of wireropes was adjusted to be 200mm up to the 8th wirerope from the bottom and spacing-maintainers should be extended to the 8th wirerope. It was figured out that the rockfall protection fences for general highways were required to install spacing-maintainers as those for express highways because they, which did not have spacing-maintenance members, were very prone to the penetration of rockfall even for the very small rockfall impact energies.

나노-스케일 전계 효과 트랜지스터 모델링 연구 : FinFET

김기동,권오섭,서지현,원태영,Kim, Ki-Dong,Kwon, Oh-Seob,Seo, Ji-Hyun,Won, Tae-Young 대한전자공학회 2004 電子工學會論文誌-SD (Semiconductor and devices) Vol.41 No.6

본 논문에서는 2차원 양자 역학적 모델링 및 시뮬레이션(quantum mechanical modeling and simulation)으로써, 자기정렬 이중게이츠 구조(self-aligned double-gate structure)인 FinFET에 관하여 결합된 푸아송-슈뢰딩거 방정식(coupled Poisson and Schrodinger equations)를 셀프-컨시스턴트(self-consistent)한 방법으로 해석하는 수치적 모델을 제안한다. 시뮬레이션은 게이트 길이(Lg)를 10에서 80nm까지, 실리콘 핀 두께($T_{fin}$)를 10에서 40nm까지 변화시켜가며 시행되었다. 시뮬레이션의 검증을 위한 전류-전압 특성을 실험 결과값과 비교하였으며, 문턱 전압 이하 기울기(subthreshold swing), 문턱 전압 롤-오프(thresholdvoltage roll-off), 그리고 드레인 유기 장벽 감소(drain induced barrier lowering, DIBL)과 같은 파라미터를 추출함으로써 단채널 효과를 줄이기 위한 소자 최적화를 시행하였다. 또한, 고전적 방법과 양자 역학적 방법의 시뮬레이션 결과를 비교함으로써,양자 역학적 해석의 필요성을 확인하였다. 본 연구를 통해서, FinFET과 같은 구조가 단채널 효과를 줄이는데 이상적이며, 나노-스케일 소자 구조를 해석함에 있어 양자 역학적 시뮬레이션이 필수적임을 알 수 있었다. We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

National Biotechnology Innovation System in the United States

김기동,황용식,Kim, Ki-Dong,Hwang, Yong-Sik The Korean Society of Business Venturing 2010 벤처창업연구 Vol.5 No.2

Biotechnology has strategic importance related to the development of start-up companies, industries and nations in the near future. Therefore, many countries have promoted and developed biotechnology. The United States has led the world in promoting biotechnology. American biotechnology policies are diverse, and thus no comprehensive systematic studies have been done on it. In our paper, we will discuss American biotechnology policy in detail. For effective analysis, we will rely on the concept of a national innovation system, which emphasizes the institutional settings of innovation actors and their interaction. This paper deals with the American national innovation system for biotechnology. We will analyze the role of major actors, academia, public research institutes, and venture companies and their interactions. The American biotechnological innovation system is composed of diverse actors and numerous start-up companies in the biotechnology industry. In addition, there are many diverse policy programs for promoting biotechnology. Because of country-specific frame conditions, every country has different institutional settings and policies for promoting biotechnology. Our paper will render meaningful implications for various countries. We also think that this paper will be of interest for international readers.