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온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안
권세용,정태호,Kwon, Seyong,Jung, Taeho 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.3
In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.