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공태경 ( Tae Kyung Gong ),전재현 ( Jae Hyun Jeon ),허성보 ( Sung Bo Heo ),차병철 ( Byung Chul Cha ),김준호 ( Jun Ho Kim ),정우창 ( Uoo Chang Jung ),박순 ( Soon Park ),공영민 ( Young Min Kong ),김대일 ( Daeil Kim ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.2
To investigate the effect of a Ni buffer layer on the structural, electrical and optical properties of GZO (Ga Doped ZnO) thin films, GZO single layer and GZO/Ni bi-layered films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating. GZO films had an optical transmittance of 87.1% in the visible wavelength region and an electrical resistivity of 1.0×10-2 Ωcm, while GZO/Ni films had a lower resistivity of 1.2×10-3 Ωcm and an optical transmittance of 82.4%. Based on the figure of merit, it is clear that a 2 nm thick Ni buffer layer enhanced the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications (Received December 24, 2014)
진공열처리 온도에 따른 GZO/Al 적층박막의 구조적, 전기적, 광학적 특성 변화
김선경(Sun-Kyung Kim),김승홍(Seung-Hong Kim),김소영(So-Young Kim),전재현(Jae-Hyun Jeon),공태경(Tae-Kyung Gong),윤대영(DaeYoung Yoon),최동용(DongYong Choi),최동혁(Dong-Hyuk Choi),손동일(Dong-Il Son),김대일(Daeil Kim) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.2
Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and 300℃ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at 300℃ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of 9.8 × 10<SUP>?4</SUP> Ωcm was observed in the films annealed at 300℃. Due to the increased carrier mobility, 2.35 ㎠ V<SUP>?1</SUP>S<SUP>?1</SUP> of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.
열처리공학회지,제27권 제1호(2014) : GZO/ZnO 적층박막의 두께변화에 따른 구조적, 전기적, 광학적 물성 변화
김승홍 ( Seung Hong Gong ),김선경 ( Dong Kyung Kim ),김소영 ( So Young Kim ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Ll Son ),김대일 ( Daeil Kim ) 한국열처리공학회 2014 熱處理工學會誌 Vol.27 No.1
Ga doped ZnO (GZO) single layer and GZO/ZnO bi-Iayered films were deposited on glass substrates by radio frequency magnetron sputtering and then the influence of film thickness on the structural, electrical. and optical properties of the films was considered, Thicknesses of the GZO/ZnO films was varied as GZO 100 nm, GZO 85 nm/ZnO 15 nm and GZO 70 nm/ZnO 30 nm, respectively The observed result means that optical transmittance and electrical resistivity of the films were influenced with film thickness and GZO 85 nm/ZnO 15 nm bilayered films show the higher figure of merit than that of the films prepared other films in this study,
Ag 완충박막 두께에 따른 IGZO/Ag 적층박막의 특성 변화
김소영 ( So Young Kim ),김선경 ( Sun Kyung Kim ),김승홍 ( Seung Hong Kim ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Il Son ),김대일 ( Dae Il Kim ) 한국열처리공학회 2014 熱處理工學會誌 Vol.27 No.5
IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequencyand direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical,optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10,15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO filmswith 15 nm thick Ag buffer layer show the higher figure of merit (1.1 × 10-2 Ω-1) than that of the IGZO single layerfilms (3.7 × 10-4 Ω-1). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered filmsmay be an alternative candidate for transparent electrode in a transparent thin film transistor device.
김소영 ( So Young Kim ),김선경 ( Sun Kyung Kim ),김승홍 ( Seung Hong Kim ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),손동일 ( Dong Il Son ),최동혁 ( Dong Hyuk Choi ),김대일 ( Dae Il Kim ) 한국열처리공학회 2014 熱處理工學會誌 Vol.27 No.4
IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates andthen annealed in vacuum for 30 minutes at 100, 200 and 300℃, respectively. The thickness of films kept at100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as depositedfilms were 91.9% and 901 Ω/□, respectively, the films annealed at 300℃ show the optical transmittance of 95.4%and the sheet resistance of 383 Ω/ □. The experimental results indicate that vacuum-annealed IGZO film at 300℃ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.
Ti 완충층 두께에 따른 In_{2}O_{3}/Ti 적층박막의 전기적, 광학적 특성 변화
문현주 ( Hyun Joo Moon ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),김대일 ( Daeil Kim ) 한국열처리공학회 2015 熱處理工學會誌 Vol.28 No.6
In_2O_3/Ti bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, In_2O_3 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of 3.0 × 10-4 Ω-1 than that of the In_2O_3 single layer films (2.6 × 10-4 Ω-1). From the observed results, it is supposed that the In_2O_3 90 nm/TiO2 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.
Ag 중간층 두께에 따른 TiO2/Ag/TiO2 박막의 광학적 특성 변화
김소영 ( So Young Kim ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),김선경 ( Sun Kyung Kim ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Il Son ),김대일 ( Dae Il Kim ) 한국열처리공학회 2015 熱處理工學會誌 Vol.28 No.2
TiO2/Ag/TiO2 trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of TiO2 films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited TiO2 single layer films show the optical transmittance of 66.7% in the visible wavelength region and the optical reflectance of 16.5%, while the TiO2 films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of 1.01 × 1023 cm-3 was observed for a 15 nm thick Ag interlayer in TiO2/Ag/TiO2 films. The observed result means that an optimized Ag interlayer in TiO2/Ag/TiO2 films enhanced the structural and optical properties of the films. (Received January 27, 2015; Revised February 6, 2015; Accepted February 9, 2015)
Ni 박막 위치에 따른 GZO 투명전도막의 전기광학적 물성 변화
문현주 ( Hyun Joo Mun ),전재현 ( Jae Hyun Jeon ),공태경 ( Tae Kyung Gong ),서기웅 ( Ki Woong Seo ),오정현 ( Jeong Hyun Oh ),김선경 ( Sun Kyung Kim ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Il Son ),김대일 ( Daeil Kim ) 한국열처리공학회 2015 熱處理工學會誌 Vol.28 No.3
GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of 1.0 × 10(-2) Ωcm, while GZO/Ni/GZO trilayer films show a lower resistivity of 6.4 × 10(-4) Ωcm and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.(Received April 2, 2015; Revised April 13, 2015; Accepted April 17, 2015)
전자빔 조사에 따른 In_2O3/Ti 적층박막의 전기적, 광학적 특성 변화
문현주 ( Hyun Joo Moon ),전재현 ( Jae Hyun Jeon ),송영환 ( Young Hwan Song ),오정현 ( Jung Hyun Oh ),공태경 ( Tae Kyung Gong ),최동혁 ( Dong Hyuk Choi ),손동일 ( Dong Il Son ),김대일 ( Daeil Kim ) 한국열처리공학회 2015 熱處理工學會誌 Vol.28 No.6
We have considered the influence of electron irradiation on the optical and electrical properties of In_{2}O_{3}/Ti bi-layered films prepared with RF and DC magnetron sputtering. The In_{2}O_{3}/Ti thin films irradiated at 600eV shows the lowest resistivity of 6.9 × 10^{-4}Ωcm. The optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 600 eV shows 82.9% of optical transmittance in this study. By comparison of figure of merit, it is concluded that the opto-electrical performance of In_{2}O_{3}/Ti bi-layered film is improved with electron irradiation. (Received October 13, 2015; Revised October 19, 2015; Accepted October 29, 2015)