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Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Zhang, Ying-Ying,Choi, Chel-Jong,Oh, Jungwoo,Han, In-Shik,Li, Shi-Guang,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Jammy, Raj,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.11
Ying-Ying Zhang,Jungwoo Oh,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Ga-Won Lee,Majhi, P.,Hsing-Huang Tseng,Jammy, R.,Hi-Deok Lee IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 <SUP>°</SUP>C for 30 min. In addition, the surface of the Ni-Pt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as Pt<SUB>x</SUB>Ge<SUB>y</SUB> and Ni<SUB>x</SUB>Pt<SUB>1-x</SUB>Ge<SUB>y</SUB> can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed Ni-Pt(1%) alloy could be promising for high-mobility Ge MOSFET applications.</P>
Stress Dependence of Thermal Stability of Nickel Silicide forNano MOSFETs
Ying-Ying Zhang,Won-Jae Lee,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,이희덕,Sung-Kyu Lim 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride (Si3N4) layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at 500 oC for 30 sec. 2000 Å thick Si3N4 layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the Si3N4 layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
Zhang, Ying-Ying,Lee, Won-Jae,Zhong, Zhun,Li, Shi-Guang,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Lim, Sung-Kyu The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Ying-ying Zhang,Ru-yu Xia,Shi-bing Liang,Xiao-yang Hu,Meng-yuan Dai,Yi-lin Li,Le-yi Zhao,Michael Moore,Yu-tong Fei,Jian-ping Liu 한국한의학연구원 2021 Integrative Medicine Research Vol.10 No.3
Background: Shufeng Jiedu capsule has been widely used in China for acute upper respiratory tract infections (AURTIs). The aim of this study was to evaluate its effectiveness and safety for AURTIs. Methods: Randomized controlled trials comparing SFJD with conventional drug for patients with AURTIs were included. Eight databases were searched from their inceptions to February 2021. Data was synthesized using risk ration (RR) or mean difference (MD) with their 95% confidence interval (CI). The primary outcome was resolution time of typical symptoms. Results: Twenty-five RCTs involving 3410 patients were included. SFJD in combination with conventional drug was associated with; in common cold shortening the duration of fever (MD −1.54 days, 95% CI [−2.15,−0.92], I2 = 80%, n = 385, 3 trials) and cough (MD −1.22 days, 95% CI [−1.52, −0.93]); in herpangina, shortening the duration of fever (MD -0.68 days, 95% CI [−1.15, −0.21], I2 = 68%, n = 140, 2 trials) and blistering (MD −0.99 days, 95% CI [−1.23, −0.76], n = 386, 3 trials); in acute tonsillitis and acute pharyngitis shortening the duration of fever (MD −1.13 days, 95% CI [−1.36, −0.90], I2 = 33%, n = 688, 7 trials) and sore throat (MD −1.13 days, 95% CI [−1.40, −0.86], I2 = 84.1%, n = 1194, 10 trials). SFJD also improving their cure rate with a range (1–5 days). No serious adverse events were reported. Conclusion: Low certainty evidence suggests that SFJD appears to shorten the duration of symptoms in AURTIs, improve cure rate and seems safe for application. However, high quality placebo controlled trials are warranted to confirm its benefit.
Ying Zhang,Yunrun Zhang,Jianyong Dong,Xiaoxia He,Min Qiao,Hans-Otto Baral,Ke-Qin Zhang,Zefen Yu 한국미생물학회 2016 The journal of microbiology Vol.54 No.1
A new species of Orbilia related to O. luteorubella is described mainly based on morphological characters of its asexual morph and molecular data. The sexual morph does not significantly differ from O. luteorubella, whereas the asexual morph obtained from its ascospore isolate resembles members of the non-predacious genus Dactylella, because it has fusiform phragmoconidia borne singly at the apex of conidiophores. Phylogenetic analysis showed that this strain clustered with a clade that included available strains of the O. luteorubella aggregate and was distant from all analysed Dactylella species. Within this clade, the new strain fell between species with filiform conidia and those of a Pseudotripoconidium anamorph. By combining morphological and phylogenetic analyses, we conclude that our isolate belongs to a new taxon. Pleomorphism of the new taxon is described and discussed.
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
Ying-Ying Zhang,In-Shik Han,Shi-Guang Li,Soon-Yen Jung,박기영,신홍식,Ga-Won Lee,왕진석,이희덕,오정우,Prashant Majhi,Raj Jammy 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this research, the influence of an interlayer dielectric (ILD) capping layer on the thermal stability of Ni germanide was analyzed. The Ni germanide was formed on a Ge-on-Si substrate by using a one-step rapid thermal process (RTP) at 400 ˚C for 30 sec. We found little difference in the X-ray diffraction (XRD) results, but the proposed structure with oxide ILD capping layer showed better thermal immunity than that without one. Adopting an oxide ILD capping layer resulted in a lower sheet resistance, less surface roughness, and less Ni germanide agglomeration and penetration after high temperature post-germanidation annealing at 500 ˚C. Therefore, oxide capping is promising for improving the thermal stability of Ni germanide for nanoscale germanium metal oxide semiconductor field effect transistors (Ge MOSFETs).
Ying Yang,Dong Wang,Lei Cui,Hong-Hao Ma,Li Zhang,Hong-Yun Lian,Qing Zhang,Xiao-Xi Zhao,Li-Ping Zhang,Yun-Ze Zhao,Na Li,Tian-You Wang,Zhi-Gang Li,Rui Zhang 대한암학회 2021 Cancer Research and Treatment Vol.53 No.1
Purpose We sought to investigate the effectiveness and safety of dabrafenib in children with BRAFV600E-mutated Langerhans cell histiocytosis (LCH). Materials and Methods A retrospective analysis was performed on 20 children with BRAFV600E-mutated LCH who were treated with dabrafenib. Results The median age at which the patients started taking dabrafenib was 2.3 years old (range, 0.6 to 6.5 years). The ratio of boys to girls was 2.3:1. The median follow-up time was 30.8 months (range, 18.9 to 43.6 months). There were 14 patients (70%) in the risk organ (RO)+ group and six patients (30%) in the RO– group. All patients were initially treated with traditional chemotherapy and then shifted to targeted therapy due to poor control of LCH or intolerance to chemotherapy. The overall objective response rate and the overall disease control rate were 65% and 75%, respectively. During treatment, circulating levels of cell-free BRAFV600E (cfBRAFV600E) became negative in 60% of the patients within a median period of 3.0 months (range, 1.0 to 9.0 months). Grade 2 or 3 adverse effects occurred in five patients. Conclusion Some children with BRAFV600E-mutated LCH may benefit from monotherapy with dabrafenib, especially high-risk patients with concomitant hemophagocytic lymphohistiocytosis and intolerance to chemotherapy. The safety of dabrafenib is notable. A prospective study with a larger sample size is required to determine the optimal dosage and treatment duration.