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Yan‑Li Li,Xi‑Qian Xing,Yi Xiao,Yan‑Hong Liu,Yu‑Shan Zhou,Min Zhuang,Chao‑Qian Li 한국유전학회 2020 Genes & Genomics Vol.42 No.12
Background: The overexpression of TSLP and DNA methylation in asthma were both risk factors the relationship was not clear. Objective: This study aimed to investigate the relationship between methylation status of TSLP promoter and mRNA/protein expression in asthmatic airway epithelial cells. Methods: Human bronchial epithelial cells were cultured in vitro and divided into: Control group, treated with PBS, model group, sensitized with LPS (10 μg/mL) for 12 h (37 °C, 5% CO2). Other groups were cultured with the pCMV3 plasmid (M + NC/pCMV), pGPH1 plasmid (M + NC/pGPH), DNMT1/pCMV3 plasmid (M + DNMT1/pCMV), and DNMT1/pGPH1 plasmid (M + DNMT1/pGPH) for 48 h. The expression of DNA methyltransferase 1 and TSLP were measured using real-time PCR and western blotting. Results: Compared with the control group, TSLP mRNA (1.00 ± 0.00 vs. 2.82 ± 0.81 vs. 1, P < 0.001) and protein (1.07 ± 0.04 vs. 1.46 ± 0.11, P < 0.01) were significantly greater, and the methylation of promoter was lower (92.75 ± 1.26 vs. 58.57 ± 3.34, P < 0.05) in the model group. Compared with the model group, TSLP mRNA (2.82 ± 0.81 vs. 1.17 ± 0.10, P < 0.001) decreased, but TSLP promoter methylation increased (58.57 ± 3.34 vs. 92.58 ± 7.30, P < 0.05) in M + DNMT1/pCMV. TSLP mRNA and protein were higher (2.82 ± 0.81 vs. 5.32 ± 0.21, P < 0.001; 1.46 ± 0.11 vs. 1.94 ± 0.11, respectively, P < 0.01), TSLP promoter methylation was lower (58.57 ± 3.34 vs. 33.57 ± 4.29, P < 0.05) in M + DNMT1/pGPH. Conclusions: Overexpression of TSLP in asthmatic airway epithelial cells may be regulated by DNA demethylation.
Hybrid Patterns Recognition of Control Chart Based on WA-PCA-PSO-SVM
Liu Yan-zhong,Zhang Hong-lie,Liu Yan-ju,Jiang Jin-gang 보안공학연구지원센터 2014 International Journal of Control and Automation Vol.7 No.10
Based on the analysis of the defect of traditional model, this paper proposes a new control chart pattern recognition model, which includes Wavelet Analysis (WA), Principal Component Analysis (PCA), Particle Swarm Optimization (PSO) and Support Vector Machine (SVM). WA is good to eliminate noise control chart anomaly pattern recognition of the adverse effect. PCA eliminates the redundant information of data between SVM and reduces the input dimension and computational complexity. PSO algorithm optimizes the parameters of SVM and the establishment of the optimal control chart anomaly pattern classifier can solve the problem optimal parameters of SVM. The simulation results show that the model is feasible, the results are reliable. This algorithm improves the control chart abnormal state average recognition accuracy and be used in the machining process real-time monitoring.
Liu, Yan-Yan,Jin, Hu-Jie,Park, Choon-Bae,Hoang, Geun C. The Korean Institute of Electrical and Electronic 2009 Transactions on Electrical and Electronic Material Vol.10 No.1
N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.
Yan-Yan Liu,박춘배,Hu-Jie Jin,Geun C. Hoang 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.1
N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at 800 oC for 5 minutes in ambient of O2 with pressure of 10 Torr. X-ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at 800 oC possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of 1.145x1017 cm-3. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as VZn, ZnO, Oi and OZn. The p-type defects (Oi, VZn, and OZn) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.
PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering
Yan-Yan Liu,박춘배,Hu-Jie Jin,Geun C. Hoang 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.3
High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of N2 and O2 gas. The target was ceramic ZnO mixed with Al2O3 (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of 1.5x1015~2.93x1017 cm-3, resistivity in the range of 131.2~2.864 Ωcm, mobility in the range of 3.99~31.6 cm2V-1s-1, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth (Ed) of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth (Ea) was reduced to 63 meV.
PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering
Liu, Yan-Yan,Jin, Hu-Jie,Park, Choon-Bae,Hoang, Geun-C. The Korean Institute of Electrical and Electronic 2009 Transactions on Electrical and Electronic Material Vol.10 No.3
High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.
Hong-Yan Zhao,Wei Liu,Yi Wang,Nannan Dai,Jian-Hong Gu,Yan Yuan,Xue-Zhong Liu,Jian-Chun Bian,Zong-Ping Liu 대한수의학회 2015 Journal of Veterinary Science Vol.16 No.3
Exposure to cadmium (Cd) induces apoptosis in osteoblasts (OBs); however, little information is available regarding the specific mechanismsof Cd-induced primary rat OB apoptosis. In this study, Cd reduced cell viability, damaged cell membranes and induced apoptosis in OBs. We observed decreased mitochondrial transmembrane potentials, ultrastructure collapse, enhanced caspase-3 activity, and increasedconcentrations of cleaved PARP, cleaved caspase-9 and cleaved caspase-3 following Cd treatment. Cd also increased the phosphorylationof p38-mitogen-activated protein kinase (MAPK), extracellular signal-regulated kinases (ERK)1/2 and c-jun N-terminal kinase (JNK) in OBs. Pretreatment with the caspase inhibitor, N-benzyloxycarbonyl-Val-Ala-Asp-fluoromethylketone, ERK1/2 inhibitor (U0126), p38 inhibitor(SB203580) and JNK inhibitor (SP600125) abrogated Cd-induced cell apoptosis. Furthermore, Cd-treated OBs exhibited signs of oxidativestress protection, including increased antioxidant enzymes superoxide dismutase and glutathione reductase levels and decreased formationof reactive oxygen species. Taken together, the results of our study clarified that Cd has direct cytotoxic effects on OBs, which are mediatedby caspase- and MAPK pathways in Cd-induced apoptosis of OBs.