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Case of Follicular Bronchiolitis in Rheumatoid Arthritis
( Jong Hwa Lee ),( Myungwoo Choi ),( Sung Sik Oh ),( Mi Rim Choi ),( Hyun Ju Yang ),( Kwang Min Lee ),( Kyoung Hwa Choi ) 대한류마티스학회 2016 대한류마티스학회지 Vol.23 No.6
Follicular bronchiolitis is an uncommon bronchiolar disorder that is characterized by the presence of hyperplastic lymphoid follicles with reactive germinal centers. The condition is associated with connective tissue diseases such as rheumatoid arthritis, Sjogren`s syndrome, and immunodeficiency disorders. A 56-year-old man with rheumatoid arthritis was admitted to hospital with a progressively enlarging pulmonary nodule in the left upper lobe. A follow-up contrast tomography scan showed that the nodule had increased in size from 4.2 mm to 6.3 mm over a 3 month period. An open lung biopsy was performed to establish a definite pathologic diagnosis of the pulmonary nodule, which was suspected to be a lung malignancy. The nodule was diag-nosed as follicular bronchiolitis based on the histopathology findings. We describe a patient with follicular bronchiolitis that was confirmed by an open lung biopsy, and is believed to have had rheumatoid involvement. (J Rheum Dis 2016;23:392-395)
Myungwoo Son,Joonmyoung Lee,Jubong Park,Jungho Shin,Godeuni Choi,Seungjae Jung,Wootae Lee,Seonghyun Kim,Sangsu Park,Hyunsang Hwang IEEE 2011 IEEE electron device letters Vol.32 No.11
<P>We herein present a nanoscale vanadium oxide (VO<SUB>2</SUB>) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed (<; 20 ns), and high current density (>; 10<SUP>6</SUP> A/cm2). Owing to extrinsic defects, a large-area device with a 20-nm-thick VO<SUB>2</SUB> layer underwent an electrical short. In contrast, after scaling the device active area (<; 5 × 10<SUP>4</SUP> nm<SUP>2</SUP>), excellent switching uniformity was obtained. This can be explained by the reduced defects and the metal-insulator transition of the whole nanoscale VO<SUB>2</SUB>. By integrating a bipolar resistive random access memory device with the VO<SUB>2</SUB> selection device, a significantly improved readout margin was obtained. The VO<SUB>2</SUB> selection device shows good potential for cross-point bipolar resistive memory applications.</P>
타원체형 모델의 기하학적인 특성을 이용한 얼굴 텍스쳐 생성
노명우(Myungwoo Noh),이중재(JoongJae Lee),김계영(Gaeyoung Kim),최형일(Hyungil Choi) 한국정보과학회 2003 한국정보과학회 학술발표논문집 Vol.30 No.1B
본 논문에서는 얼굴 형태와 유사한 타원체형 모델의 가변적 블록크기를 기반으로 하는 영상정렬 알고리즘을 제안한다. 실린더형 모델을 사용한 기존의 방법은 블록정합 수행 시 좌우 곡률을 고려하므로 좌우 영상은 정확히 정렬하지만 상하 부분은 사람의 두상모양이나 턱 구조와 다르기 때문에 상하 영상을 정렬한 때 오류가 발생한다. 본 논문에서 제안하는 알고리즘은 얼굴 모델의 상하좌우의 곡률에 따라 가변적인 블록크기를 사용하고 영상의 상관관계를 이용하여 정확한 정렬을 할 수 있도록 한다. 그리고 얼굴 텍스쳐 영상을 생성하기 위하여 영상 모자익 기법을 사용하며 영상들이 서로 잘 융합하도록 크로스디졸브(cross dissolve) 기법을 적용하여 영상을 스티칭한다.
Mechanical and electrical properties of NbMoTaW refractory high-entropy alloy thin films
Kim, Hanuel,Nam, Seungjin,Roh, Aeran,Son, Myungwoo,Ham, Moon-Ho,Kim, Jae-Hun,Choi, Hyunjoo Elsevier 2019 International Journal of Refractory Metals and Har Vol.80 No.-
<P><B>Abstract</B></P> <P>Refractory high-entropy alloys (RHEAs) have opened a new chapter in the development of structural materials for use at high temperatures owing to their outstanding mechanical properties and thermal stability. In this study, we developed a NbMoTaW RHEA thin film via direct current magnetron sputtering from a single target that was synthesized by sintering a mixture of multiple elemental powders. The as-deposited thin film exhibited a single nanocrystalline solid-solution phase with body-centered cubic structure. Moreover, the film had a high hardness of 12 GPa and electrical resistivity of 168 μΩ·cm due to severe lattice distortion and the presence of nanoscale grains. Hence, RHEA films can be used as a hard coating for protective layers and as electrical resistors in nanofabricated devices owing to their favorable combination of hardness and electrical resistivity.</P> <P><B>Highlights</B></P> <P> <UL> <LI> NbMoTaW RHEA thin films was produced via DC magnetron sputtering from a single target. </LI> <LI> The NbMoTaW thin film presented a single solid-solution phase with a BCC structure. </LI> <LI> The constituent elements of the NbMoTaW RHEA was uniformly distributed in the film. </LI> <LI> The NbMoTaW thin film revealed high hardness of 12 GPa and electrical resistivity of 168 μΩ·cm. </LI> </UL> </P>
이희조 ( Yi-heejo ),김명우 ( Kim-myungwoo ),최종현 ( Jong-hyen Choi ),강혁 ( Kang-hyeug ) 한국정보처리학회 2015 한국정보처리학회 학술대회논문집 Vol.22 No.1
신호등을 제어하는 교통신호제어기는 차량의 흐름을 제어하는 중요한 역할을 하는 장치이다. 만약 도심지에서 교통신호제어기가 침해되었을 경우 교통마비 현상이 발생하거나 자칫 교통사고까지 유발할 수 있다. 하지만 현 교통신호제어기는 물리적 보안 이외 인증, 행위제어, 통신구간에 대한 보안이 무척 취약하다. 따라서 이를 보안하기 위해 각각의 위험 요소에 대해 분석하고 그에 맞는 대응방안을 마련할 필요가 있다. 본 논문에서는 신호등 교통신호제어기의 취약점을 분석하고 각각의 취약점에 대해서 대응책을 제시하고자 한다.