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연산 증폭기 (TL494) 를 이용한 DC/DC 승압 컨버터 제어 시스템 설계
정구종,이혜연,문경주,정유석,이준영,손영익 明知大學校 産業技術硏究所 2009 産業技術硏究所論文集 Vol.28 No.-
A simple control system using an op Amp (TL494) is presented for a DC/DC boost converter. The DC/DC boost converters have many industrial applications including renewable energy sources and hybrid automobiles. The problem of regulating the output voltage in the presence of load variation has been a research subject of interest for many years. After computer simulations with SimPower system of Matlab Simulink, we have developed the converter system in university laboratory according to the design specifications. Since the chip TL494 has both op Amp and PWM comparator even beginners can easily develop the control system. Experimental results show that the proposed system has some robustness with respect to the load variation.
Logic inverters based on the property modulated Si nanowires by controlled surface modifications
Moon, Kyeong-Ju,Lee, Tae-Il,Lee, Woong,Myoung, Jae-Min The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.4
<P>Silicon nanowires (Si NWs) showing stabilized n-type conductivity, which can be fabricated with high yield by simple surface treatment, are presented in this study. Si NWs were initially fabricated by electroless etching of phosphine-doped n-type Si wafers. At this stage, Si NWs showed large scatter in electrical properties. Once these nanowires were post-annealed in oxidizing ambient and then wet-etched in dilute HF solution, their electrical properties were markedly improved and stabilized to show proper n-type conductivity. Microstructural examination revealed that such improvements and stabilization accompanied flattening of the outer surface and removal of surface defects due to the surface treatment processes. To demonstrate the applicability of these n-type Si NWs to logic devices, a model complementary metal–oxide–semiconductor (CMOS) was prepared by transfer implantation of p- and n-type Si NWs on a poly(4-vinylphenol) layer and this model CMOS showed logic inverter characteristic with controllable gain.</P> <P>Graphic Abstract</P><P>Si nanowires showing stabilized n-type conductivity were prepared by simple surface treatments. A CMOS logic inverter with controllable gain could be constructed based on these nanowires. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1jm14719f'> </P>
Mode tunable p-type Si nanowire transistor based zero drive load logic inverter
Moon, Kyeong-Ju,Lee, Tae-Il,Lee, Sang-Hoon,Han, Young-Uk,Ham, Moon-Ho,Myoung, Jae-Min The Royal Society of Chemistry 2012 Chemical communications Vol.48 No.58
<P>A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at <I>V</I><SUB>DD</SUB> of −20 V was successfully fabricated on a substrate.</P> <P>Graphic Abstract</P><P>A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2cc33818a'> </P>
Moon, Kyeong-Ju,Lee, Tae-Il,Choi, Ji-Hyuk,Jeon, Joohee,Kang, Youn Hee,Kar, Jyoti Prakash,Kang, Jung Han,Yun, Ilgu,Myoung, Jae-Min American Chemical Society 2011 ACS NANO Vol.5 No.1
<P>Having high bending stability and effective gate coupling, the one-dimensional semiconductor nanostructures (ODSNs)-based thin-film partial composite was demonstrated, and its feasibility was confirmed through fabricating the Si NW thin-film partial composite on the poly(4-vinylphenol) (PVP) layer, obtaining uniform and high-performance flexible field-effect transistors (FETs). With the thin-film partial composite optimized by controlling the key steps consisting of the two-dimensional random dispersion on the hydrophilic substrate of ODSNs and the pressure-induced transfer implantation of them into the uncured thin dielectric polymer layer, the multinanowire (NW) FET devices were simply fabricated. As the NW density increases, the on-current of NW FETs increases linearly, implying that uniform NW distribution can be obtained with random directions over the entire region of the substrate despite the simplicity of the drop-casting method. The implantation of NWs by mechanical transfer printing onto the PVP layer enhanced the gate coupling and bending stability. As a result, the enhancements of the field-effect mobility and subthreshold swing and the stable device operation up to a 2.5 mm radius bending situation were achieved without an additional top passivation.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2011/ancac3.2011.5.issue-1/nn102104k/production/images/medium/nn-2010-02104k_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn102104k'>ACS Electronic Supporting Info</A></P>
Moon, Kyeong-Ju,Lee, Tae Il,Lee, Sang-Hoon,Myoung, Jae-Min The Royal Society of Chemistry 2014 Chemical communications Vol.50 No.31
<P>A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na<SUP>+</SUP> ions was used to create a field-effect transistor based memory device. Addition of Na<SUP>+</SUP> ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.</P> <P>Graphic Abstract</P><P>A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na<SUP>+</SUP> ions was used to create a field-effect transistor based memory device. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c4cc00749b'> </P>
Moon, Mi-Kyeong,Oh, Hyun-Mi,Kwon, Byoung-Mog,Baek, Nam-In,Kim, Sung-Hoon,Kim, Ju-Sin,Kim, Dae-Keun 대한약학회 2007 Archives of Pharmacal Research Vol.30 No.3
The methanolic extract of the leaves of Liriodendron tulipifera was found to show inhibitory activity towards farnesyl protein transferase (FPTase). Bioassay-guided fractionation of the methanolic extract resulted in the isolation of lipiferolide, an inhibitor of FPTase. This compound inhibited the FPTase activity in a dose-dependent manner, and showed cell growth inhibitory activity against several tumor cells.