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Routing Protocols for VANETs: An Approach based on Genetic Algorithms
( Emilio C. G. Wille ),( Hermes I. Del Monego ),( Bruno V. Coutinho ),( Giovanna G. Basilio ) 한국인터넷정보학회 2016 KSII Transactions on Internet and Information Syst Vol.10 No.2
Vehicular Ad Hoc Networks (VANETs) are self-configuring networks where the nodes are vehicles equipped with wireless communication technologies. In such networks, limitation of signal coverage and fast topology changes impose difficulties to the proper functioning of the routing protocols. Traditional Mobile Ad Hoc Networks (MANET) routing protocols lose their performance, when communicating between vehicles, compromising information exchange. Obviously, most applications critically rely on routing protocols. Thus, in this work, we propose a methodology for investigating the performance of well-established protocols for MANETs in the VANET arena and, at the same time, we introduce a routing protocol, called Genetic Network Protocol (G-NET). It is based in part on Dynamic Source Routing Protocol (DSR) and on the use of Genetic Algorithms (GAs) for maintenance and route optimization. As G-NET update routes periodically, this work investigates its performance compared to DSR and Ad Hoc on demand Distance Vector (AODV). For more realistic simulation of vehicle movement in urban environments, an analysis was performed by using the VanetMobiSim mobility generator and the Network Simulator (NS-3). Experiments were conducted with different number of vehicles and the results show that, despite the increased routing overhead with respect to DSR, G-NET is better than AODV and provides comparable data delivery rate to the other protocols in the analyzed scenarios.
Photocleavage of water with a photochemical heterosupramolecular assembly
G. J. Wilson,G. D. Will 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
The application of heterosupramolecular assemblies to device fabrication is discussed. This approach to nanoscale devicearchitecture is versatile with several methods of solar energy conversion examined that allow the evolution of H2 and/or O2 throughvisible solar irradiance. Treatment of industrial waste streams is proposed that would allow the removal of organic pollutants whilstproducing a chemical fuel in the form of pure H2. Also of great potential within this system are the analytical properties of anorganic sensor. By monitoring the photocurrent within the device as organic pollutants degrade, the identication of pollutantspecies and concentrations of mixtures in industrial waste streams could provide a versatile analytical tool.
Q. Mahmood,G. Murtaza,R. Ahmad,T. Hussain,I.G. Will 한국물리학회 2016 Current Applied Physics Vol.16 No.3
The structural, electronic, magnetic, mechanical and optical properties of ternary Zn1xVxS (x ¼ 0.0, 0.25, 0.50, 0.75 and 1.0) ferromagnetic semiconductor alloys have been studied in the zinc blende (ZB) phase, by first principle approach. Density functional theory has been employed to calculate the fundamental properties of the alloys using full-potential linearized augmented plane-wave plus the local orbitals (FPLAPW þ Lo) method. In addition, the electronic and magnetic properties are investigated by the local spin density approximation coupled with the modified BeckeeJohnson exchange potential (mBJLDA). Structural analysis revealed that the structure of the three alloys Zn0.75V0.25S, Zn0.50V0.50S, and Zn0.25V0.75S are stable in the ferromagnetic phase. It is noted that the calculated lattice constant decreases, while the bulk modulus increases with the increase of V content. The density of states and spin polarized band structure investigation demonstrated the half-metallic ferromagnetic characteristics of the investigated alloys and are also used to determines ped exchange constants N0a and N0b, due to S (p) eV(3d) hybridization. These results reveal that magnetic moment of V dopant element reduced from its free space value of 3 mB, because the Zn and S sites acquire minor atomic magnetic moments. The energy band gap analysis show an increasing trend with V doping that makes our compound a suitable candidate for the fabrication of devices operating in the ultraviolet region. Moreover, the static dielectric constant, ε1 (u), and static refractive index, n (u), increases with V contents. The incorporation of V generates some new peaks in the energy regions of 0e2.83 eV and 4e10 eV. The substitution by V increases the intensity of the peaks, and a slight red shift has been observed in the absorption peak. The extinction coefficient k (u) and optical conductivity also follow a similar trend to that of the dielectric constants. These results give deep insight into the design of devices for optical and spintronics applications using V doped ZnS.