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게이트 절연막의 O2플라즈마 처리에 의한 펜타센 OTFT의 성능 개선
李明源,송정근,金光賢,許泳憲 대한전자공학회 2003 電子工學會論文誌-SD (Semiconductor and devices) Vol.40 No.7
In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The plasma treatment produced the mobility of 0.05cm2/V·sec which is 10 times larger than the non-treated. The resistance was also reduced from 400KΩ to 50KΩ. In addition, the standard deviation of performance parameters variation was reduced with the plasma exposure time, which implies that plasma treatment makes the gate surface states be uniform across the whole wafer area. The performance parameters were increased with the exposure time up to 5min, after which they degraded again. Therefore, the optimal exposure time was found to be 5min. 펜타센 유기박막트랜지스터(OTFT)에서 게이트 절연막의 표면상태가 소자의 성능에 큰 영향을 미친다. 본 논문에서는 펜타센을 진공 증착하기전 게이트 절연막의 표면에 O2플라즈마 처리를 함으로써 OTFT의 성능에 미치는 영향을 분석하였다. O2플라즈마 처리후 소자의 전계 이동도가 0.05cm2/V·sec로 나타났으며, 이는 처리전 보다 약 10배정도 향상된 것이다. 또한 O2플라즈마 처리는 게이트 절연막의 표면상태를 균일하게 하여 각 성능지수들의 표준편차가 감소하였다. 그리고 전계 이동도는 O2플라즈마에 노출되는 시간에 따라 증가하였는데 5분을 기점으로 다시 감소하였다. 따라서 O2플라즈마 처리시간은 5분이 최적인 것으로 판단된다.
펜타센 박막의 두께와 전극위치가 펜타센 TFT 성능에 미치는 영향
李明源,송정근,金光賢 대한전자공학회 2002 電子工學會論文誌-SD (Semiconductor and devices) Vol.39 No.12
In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT. Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300Å-700Å was suitable, and that the bottom contact was more feasible for hig performance pentacene OTFT. 본 논문에서는 펜타센을 활성층으로 사용하는 유기박막트랜지스터(OTFT)의 펜타센의 두께, 그리고 소오스 및 드레인 전극의 위치에 따른 소자의 성능 변화에 대하여 연구하였다. 펜타센 박막의 두께가 증가하면 그레인 상태가 박막상태에서 벌크상태로 변화하면서 결정도가 악화되어 성능이 열화하였고, 소오스와 드레인 전극을 펜타센 위에 제작한 소자의 경우 접촉저항은 감소하였으나 누설전류가 증가하여 전류 점멸비가 감소하였다. 그러므로, 펜타센의 두께는 300Å-700Å 내외, 그리고 전극은 펜타센 아래에 위치하는 것이 적합한 것으로 확인되었다.
朴贊一(Charn Il Park),金光顯(Kwang Hyun Kim) 대한방사선종양학회 1984 Radiation Oncology Journal Vol.2 No.1
From March of 1979 through December of 1982, 84 patients with supraglottic carcinoma were seen and evaluated in the Department of Therapeutic Radiology, Seoul National University Hospital. Of these, 58 patients were treated with a curative intent by employing either radiotherapy alone or a combined approach of radiotherapy plus surgery. Sixteen patients refused to complete the treatment program. Seventy-three per cent of patients had T3 and T4 lesions and 63% of patients had lymph node metastasis at the time of diagnosis. Actuarial recurrence-free survival at 3 year was : Stage Ⅰ~Ⅱ 62%, Stage Ⅲ 54%, Stage Ⅳ 18%. For T1-2, T3 and T4 lesions, the actuarial recurrence free survival at 3 years were 50%, 34% and 9% respectively. Of 39 patients with treatment failure, 29 patients (78%) had uncontrol or ultimate recurrence at the primary site while 9 patients having lymph node recurrence, 14 patients(21%) had lymph node recurrence, and 5 patients had distant metastasis. It is suggested that planned combined radiotherapy is indicated for advanced but resectable supraglottic carcinoma.