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대전류 펄스 성형이 가능한 150MW급 펄스파워 시스템의 설계 및 동작특성
황선묵,권해옥,김종서,김광식,Hwang, Sun-Mook,Kwon, Hae-Ok,Kim, Jong-Seo,Kim, Kwang-Sik 한국전기전자학회 2012 전기전자학회논문지 Vol.16 No.3
본 논문은 트리거 시간을 조절하여 펄스 성형이 가능한 150 MW 펄스 파워 시스템의 설계와 동작특성을 알아보았다. 이 시스템은 2개의 커패시터 뱅크 모듈로 구성되어 있고, 각 커패시터 뱅크 모듈은 병렬로 연결되어 있다. 그리고 커패시터 뱅크 모듈은 메인스위치, 커패시터, 에너지 덤프회로, 크로바 회로, 펄스 성형 인덕터로 구성되어 있다. 또한 이 시스템의 모듈 선택과 트리거 시간은 트리거 제어부에서 조정된다. Pspice 시뮬레이션은 실험회로의 결과를 예측하고, 시스템의 구성품의 파라미터를 결정하기 위한 것으로 사용하였다. 실험 결과, 시뮬레이션은 실험결과와 잘 일치하였다. 출력 전류의 펄스폭은 커패시터 뱅크 모듈에서의 순간적 점화 시간 제어로 300~650 us의 펄스폭이 형성되었다. 그리고 최대 전류값은 2개의 커패시터 뱅크 모듈이 동시에 트리거 되었을 때 약 40 kA 정도이다. 이 150 MW 펄스 파워 시스템은 파암 전원, Rail Gun, Coil Gun, 나노분말 제조, HPM 등과 같은 대전류 펄스 파워 시스템에 적용할 수 있다. This paper presents design and operational characteristics of 150 MW pulse power system for high current pulse forming network to control trigger time. The system is composed of two capacitor bank modules. Each capacitor bank module consist of a trigger vacuum switch, 9k 33kJ capacitor, an energy dump circuit, a crowbar circuit and a pulse shaping inductor and is connected in parallel. It is controlled by trigger controller to select operational module and determine triggering time. Pspice simulation was conducted about determining parameters of components such as crowbar circuit, capacitor, pulse forming inductor, trigger vacuum switch and predicting results of experiment circuit. The result of the experiment was in good agreement with the result of the simulation. The various current shapes with 300~650 us pulse width is formed by sequential firing time control of capacitor bank module. The maximum current is about 40 kA during simultaneous triggering of two capacitor bank modules. The developed 150 MW pulse power system can be applied to high current pulse power system such as rock fragmentation power sources, Rail gun, Coil gun, nano-powers, high power microwave.
반도전성 실리콘 고무의 플라즈마 표면처리에 따른 접착특성과 절연성능
황선묵,이기택,홍주일,허창수,Hwang, Sun-Mook,Lee, Ki-Taek,Hong, Joo-Il,Huh, Chang-Su 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.5
In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.
안테나에 커플링되는 협대역 고출력 전자기파에 대한 저잡음 증폭기의 민감성 분석
황선묵,허창수,Hwang, Sun-Mook,Huh, Chang-Su 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.3
본 연구는 안테나에 커플링되는 협대역 고출력 전자기파에 대한 저 잡음 증폭기(LNA)의 민감성 특성을 알아보았다. LNA 소자의 오동작/파괴는 MFR/DFR((Malfunction Failure Rate/Destruction Failure Rate)을 이용하여 소자의 민감성을 확인하였다. 그리고 LNA 소자의 내부 칩 상태는 Decapsulation 분석을 이용하여 손상부위를 관찰하였다. 협대역 고출력 전자기파 장치는 2.45 GHz 마그네트론을 사용하였고, LNA의 민간성 레벨은 협대역 고출력 전자기파의 전계강도에 따라 오동작/파괴율을 평가하였다. 그 결과, LNA 소자의 오동작은 셀프리셋(Self Reset)과 파워리셋(Power Reset)의 형태로 나타내었고, 이때 오동작 임계 전계강도는 각각 524 V/m, 1150 V/m로 측정되었다. 그리고 LNA의 소자의 파괴 임계 전계강도는 1530 V/m이다. 협대역 고출력 전자기파에 의한 LNA 소자의 내부 칩 파괴는 본드와이어, 온칩와이어 그리고 컴포넌트 세가지 형태로 관찰되었다. 이 결과로, 협대역 고출력 전자기파에 의한 반도체 전자회로의 내성평가 자료로 활용할 수 있을 것으로 판단된다. This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.
광대역 고출력 전자기 펄스에 의한 마이크로컨트롤러 소자의 매개변수들의 민감성 분석
황선묵(Sun-Mook Hwang),홍주일(Joo-Il Hong),허창수(Chang-Su Huh) 대한전기학회 2010 전기학회논문지 Vol.59 No.2
Modern electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 ㎸. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Malfunction Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.
도선에 커플링 되는 고출력 전자파에 의한 CMOS IC의 피해 효과 및 회복 시간
황선묵(Sun-Mook Hwang),홍주일(Joo-Il Hong),한승문(Seung-Moon Han),허창수(Chang-Su Huh) 한국전자파학회 2008 한국전자파학회논문지 Vol.19 No.6
본 논문은 고출력 전자파에 따른 CMOS IC 소자의 피해 효과와 회복 시간을 알아보았다. 고출력 전자파 발생장치는 마그네트론을 사용하였고, CMOS 인버터의 오동작/부동작 판별법은 유관 식별이 가능한 LED 회로로 구성하였다. 그리고 고출력 전자파에 의해 오동작된 CMOS 인버터의 전원 전류와 회복 시간을 관찰하였다. 그 결과, 전계 강도가 약 9.9 ㎸/m에서의 전원 전류는 정상 전류의 2.14배가 증가하였다. 이는 래치업에 의한 CMOS 인버터가 오작동된 것을 확인할 수 있었다. 또한, COMS 인버터의 파괴는 컴포넌트, 온칩와이어, 그리고 본딩와이어에서 다른 형태로 관찰하였다. 위 실험 결과로, 전자 장비의 고출력 전자파 장해에 대한 이해를 돕는데 기초 자료로 활용될 것으로 예측된다. This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power microwaves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 ㎸/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.
고출력 전자기파의 커플링 효과에 의한 마이크로컨트롤러 소자의 피해
홍주일,황선묵,허창수,Hong, Joo-Il,Hwang, Sun-Mook,Huh, Chang-Su 한국군사과학기술학회 2008 한국군사과학기술학회지 Vol.11 No.6
We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.