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고주파 반응성 스퍼터링에 의해 제작된 InN 박막의 특성
김영호,최영복,정성훈,홍필영,문동찬,김선태,Kim, Young-Ho,Choi, Young-Bok,Chung, Sung-Hoon,Hong, Pil-Young,Moon, Dong-Chan,Kim, Sun-Tae 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.7
Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$s, and 1.912eV, respectively.