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구형도파관의 측벽 슬롯 어드미턴스 해석 및 슬롯 배열안테나 설계
朴炫泰,金榮敏,白定基,洪昌熹 東亞大學校 附設 情報通信硏究所 1995 情報通信硏究所論文誌 Vol.3 No.1
A method to determine the admittance of a slot in the narrow wall of a rectangular waveguide is presented. Using the complex power radiated from slot and the discontinuith in the modal current in the waveguide, an admittance of a slot is calculated. Slot inclination variations of conductance and sucoptance with the slot lenfth are calculated at 9.375GHz, and compared with the result of Jasik. According to the our results, a resonant array antenna slotted in the narrow wall of the rectangular waveguide having the operating frequency of 9. 375GHz and the maximum sidelobe level of -25dB is designed.
A New Method of Linear Predictive Coding
이창영,이채봉,홍창희 東亞大學校 附設 情報通信硏究所 1995 情報通信硏究所論文誌 Vol.3 No.1
We propose a new procedure for Linear Predictive Coding. By testing the new procedure over hundreds of speech frames of various phonemes, we confirmed that our procedure yield about 2.3% less power distortion from the original signal but needs about 3 times of time consumption compared to the conventional technique. As far as the fidelity is concerned, this new method is preferable but is inferior to the conventional one in regards to real-time processing of digital signals.
Al-Al₂O₃-Au 構造에서 電氣傳導度와 메모리 特性에 관한 硏究
洪昌熹 동아대학교 공과대학 부설 한국자원개발연구소 1982 硏究報告 Vol.6 No.1
The electrical properties of Al-Al₂O₃-Au MIM devices have been investigated. This devices with anodicaly grown dense Al₂O₃ layers up to 300A° in thickness give monotonic current-voltage characteristics. After forming this devices exhibit current-voltage curves with voltage controlled negative resistance and memory phenomena. And also after forming, Au ion diffusion within Al₂O₃ insulation layer, crystal defects of thin insulation film, and some localizing changes such as unstoichio-metric composition may be observed. Consequently, we conclude that the mechanism of conductivity for MIM devices is band model.
Si 웨이퍼 내의 깊은 준위 분포 특성 파악에 관한 연구
홍창희,윤기정,안기형 동아대학교 공과대학 부설 한국자원개발연구소 1988 硏究報告 Vol.12 No.2
Distributions of deep levels are studied in the n-type Si wafer which are introduced during fabrication with e-beam deposition by using DLTS technique. Test is carried out on the Schottky diode. Metalization of the diode is done by e-beam deposition before of after electron irradiation. Deep levels of the defects are measured by using various metal such as Pd/Au, Au, Pd, Ti, Mo and Hf, and by changing the annealing temperature. It is approved that some defects are introduced in the neighbor of interface of silicon and metal by e-beam deposition, and main defect of them is E(0.42) level. In the resuts, two types of the deep level are observed ; one type is that is independent of electron irradiation, for example, E(0.42) level which is observed near the interface ; another type is that is observed only in the diode deposited by e-beam after electron irradiation, for example, E(0.18) level and so on which are observed farther from the interface. It may be the reason that interaction is presented between defects from Pd, at least, and prior defects.
GaAs HEMT를 이용한 10Gbps 초고속 전치증폭기 설계
梁光鎭,白定基,洪昌憙 東亞大學校 附設 情報通信硏究所 1995 情報通信硏究所論文誌 Vol.3 No.1
This paper describes the high-speed, low-noise operation of an amplifier using GaAs HEMTs. The design comprises a pin detector followed by a two-stage, transimpedance amplifier employing inductor peaking technique. The simulated 3dB bandwidth is 9.5 GHz, and noise dose not exceed 7.1 pA/?? in the given bandwidth. The transimpedance gain is as high as 60.7dB with 820Ωfeedback resistor.
홍창희 한국전기전자재료학회 2004 전기전자재료 Vol.17 No.9
오늘날 반도체 기술의 획기적인 발전에 의해서 마침내 에디슨의 탄소 필라멘트 백열전구를 대체할 수 있는 "반도체 필라멘트"라 불리는 고출력 백색 LED(lighting emitting diode)가 차세대 조명광원으로 급부상하고 있다.(중략)
Band-to-Band 터널링에 의한 게이트 유기 드레인 누설전류의 이차원 수치해석
이상훈,하영철,송정근,홍창희 東亞大學校 附設 情報通信硏究所 1999 情報通信硏究所論文誌 Vol.7 No.1
In this paper, we investigated the characteristics of gate-induced drain leakage(GIDL) current due to the band-to-band tunneling in off-state n-MOSFET. Two-dimensional process and device simulation were performed by TMA-SUPREM4 and MEDICI. S/D(Single-Diffusion Drain) and LDD(Lightly Doped Drain) devices not applied electrical stress are simulated in order to compare drain engineering effect on GIDL characteristics. GIDL current due to direct interband tunneling in LDD structure was lower than that of S/D structure because of lower n-doping concentration. This result suggests that electric field in the gate-to-drain overlap rgion is a key factor controlling band-to-band tunneling generation rate.
田龜濟,洪昌熹 東亞大學校 1972 東亞論叢 Vol.9 No.-
When we try to get the dielctric constants of high polymer amaterials at lowest frequency or D.C, we have had only poor calculating methods according to HAMON or TOYODA. They calculated the dielectric permittivity from approaching functions such as t? or ???. But owing to the distribution property of relaxation times their calculating values are permited a great error. Thus in this paper we worked out a new way to calculatd exactly from relaxation curve which we got experimentaly. As a result we observed directly the dielectric phenomena at lowest frequency about ????heltz under 1% errors.