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이종현,박대진,신동혁,김용석,허정나,김석윤 대한금속재료학회(대한금속학회) 1999 대한금속·재료학회지 Vol.37 No.9
In this study, the solderability of the in-situ composite solders was investigated by reflow soldering the solder balls on a BT substrate. The reaction characteristics of the composite solders were evaluated by observing the microstructure of the solder/BLM interface. Also the effects of the number of reflow soldering on the microstructure and the distribution of the reinforcement were investigated. These results indicated that the composite solder has a lower reactivity with the BLM and Cu, but its thermal stability must be improved significantly for actual applications of the material.
Emission Stability of Semiconductor Nanowires
유세기,정태원,이상현,허정나,이정희,이철진,김진영,이형숙,국윤필,김종민,Yu, Se-Gi,Jeong, Tae-Won,Lee, Sang-Hyun,Heo, Jung-Na,Lee, Jeong-Hee,Lee, Cheol-Jin,Kim, Jin-Young,Lee, Hyung-Sook,Kuk, Yoon-Pil,Kim, J.M. The Korean Vacuum Society 2006 Applied Science and Convergence Technology Vol.15 No.5
열 화학기상법으로 만든 GaN와 GaP 나노와이어에서 전계 방출과, 산소와 아르곤 분위기에서 안정성에 대해 조사하였다. GaN 나노와이어의 경우 산소 분위기에서 전계 방출이 급격하게 줄었으나, GaP에서는 그렇지 않았다. 두 나노와이어 모두 아르곤 분위기에서는 큰 변화가 없었다. GaP 나노와이어의 외부에 존재하는 산화물 층이 전자 방출 안정성에 크게 기여한 것으로 생각된다. 나노와이어에서 방출된 전자의 에너지 분포를 통해 반도체 나노와이어는 탄소 나노튜브와 그 전계 방출 메카니즘이 다름을 유추할 수 있었다. Field emission of GaN and GaP nanowires, synthesized by thermal chemical vapor deposition, and their emission stabilities under oxygen and argon environments were investigated. The field emission current of GaN nanowires was seriously deteriorated under oxygen environment, while that of GaP was not. Both wires did not show any noticeable change under argon environment. The existence of oxide outer shell layers in the GaP nanowires was proposed to be a main reason for this emission stability behavior. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from that of carbon nanotubes.
이종현,김석윤,신동혁,허정나,박대진,김용석 대한금속재료학회(대한금속학회) 1999 대한금속·재료학회지 Vol.37 No.7
In this study, an attempt was made to develop an in-situ processing method of Sn-Ag composite solders for the ball grid array in electronic packaging applications. The reinforcing phase(Cu_6Sn_5) was produced by the reaction between Sn in the matrix and Cu powders added. It was found that the shape and size of the phase formed are affected by the processing parameters such as holding time very sensitively. The mechanical properties and the thermal stability of the composite solders were proved to be superior to those of Sn-3.5 %Ag solder.