http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 허시내 (검색결과 5 건)
- 무료
- 기관 내 무료
- 유료
-
Al<sup>3+</sup>와 Y<sup>3+</sup> 동시치환 SnO<sub>2</sub> 투명전극 박막의 전기적 특성
김근우,서용준,성창훈,박근영,조호제,허시내,구본흔,Kim, Geun-Woo,Seo, Yong-Jun,Sung, Chang-Hoon,Park, Keun-Young,Cho, Ho-Je,Heo, Si-Nae,Koo, Bon-Heun 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.10
Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.
-
서용준,성창훈,M. S. Anwar,허시내,김근우,구본흔,길경석,박대원 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
Sb2O5-doped tin-oxide (SnO2) thin films were prepared on glass substrates by using pulsed laser deposition (PLD). The electrical and the optical properties of these films were investigated by varying the doping amount, oxygen partial pressure, substrate temperature, and film thickness. The electrical properties were studied through the resistivity, the Hall mobility and the number of carriers measured as functions of the conditions. The best value of the resistivity of the films was 7.8 × 10−4 Ω·cm and the average transmission in the visible region was 84% at a substrate temperature of 500 °C and doping amount of 6 wt.%. The figure of merit was computed from the spectral transmittance and the film-thickness-dependent resistivity. The lowest resistivity (7.8 × 10−4 Ω·cm) was observed for the annealed film deposited with a doping of 6 wt.%.
-
Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성
김근우,구본흔,서용준,성창훈,박근영,조호제,허시내 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.10
Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. SnO2 is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of 10-3 Ω·cm and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of SnO2 were investigated. The addition of Y in SnO2 was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of SnO2. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of SnO2single-doped with Al and Y. {(x/2)Al2O3+(x/2)Y2O3}-SnO2 was used for the source of Al and Y to prevent the evaporation of Al2O3 and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of SnO2 co-doped with Al and Y will be discussed. 투명전극박막은 디스플레이 소자, 태양전지 등 광범위하게 응용되고 있는 분야이다. 그 중 SnO2는 3.5eV이상의 높은 에너지 밴드갭을 가지며, 산소 결함 때문에 본질적으로 n-형 반도체이다. SnO2는 가시광선 영역에서 90%이상의 높은 투과율을 가지며 10-3Ω·cm의 낮은 비저항을 가지는 것으로 알려져 있다. 이번 연구에서는 SnO2에 Al과 Y의 동시 치환되었을 때 특성에 미치는 영향에 대해 알아보았다. Al2O3과 Y2O3 을 SnO2에 동시 치환하여 이온반경을 주격자 이온(Sn4+)과의 이온반경비를 유사하게 조절함으로써 Strain energy를 보다 감소시켜 고용영역을 확대하고자 하였다. 결론적으로 Al과 Y의 첨가량이 4 : 2일 때 평균이온 반경이 Sn4+과 가장 유사한 것으로 확인되었으며, 이에 가장 낮은 비저항값인 6.7×10-3Ω‧㎝를 가지는 n-형 투명전극이 형성되는 것이 확인되었다.
-
Faheem Ahmed,샤런드라쿠마르,Nishat Arshi,M. S. Anwar,허시내,김근우,여준청,구본흔,Hoa Hong Nguyen 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
We report the observation of room temperature ferromagnetism in Cu-doped ZnO nanorods prepared by microwave irradiation technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results showed that Cu-doped ZnO comprise a single phase nature with wurtzite structure and Cu ions were successfully incorporated into the lattice position of Zn ions in ZnO matrix. Field emission scanning electron microscopy (FESEM) and TEM micrographs suggested that the size of Cu-doped ZnO nanorods ranges from 50 to 70 nm in diameter and 300 to 400 nm in length, respectively. The selected area electron diffraction (SAED) pattern infer that the Cu-ZnO nanorods have single phase nature with preferentially growth direction along [0 0 1] plane. Raman scattering spectra of Cu-doped ZnO nanorods revealed the blue shift of <I>E<SUB>2</SUB></I><SUP>high</SUP> mode that is related to the vibration of oxygen atoms in wurtzite ZnO, suggested the successful doping of Cu at Zn site into ZnO. Magnetization measurements showed that the nanorods exhibit room temperature ferromagnetism.
-
M. S. ANWAR,FAHEEM AHMED,G. W. Kim,허시내,구본흔 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.12
A detailed investigation of the magnetic and the magnetocaloric properties of La0.7Sr0.3MnO3,La0.7Ca0.3MnO3 and La0.7Ca0.1Sr0.2MnO3 for possible application in magnetic refrigeration is presented. The adiabatic magnetic entropy change was determined for a magnetic field change from0 to 2.5 T by using magnetization data. A broad table-like entropy change with a relative coolingpower of 111 J/kg in an applied magnetic field of 2.5 T with an operating temperature range of54 K was observed in the La0.7Ca0.1Sr0.2MnO3 sample. The broadening in the magnetic entropychange in La0.7Ca0.1Sr0.2MnO3 is discussed in light of the tricritical mean-field theory. The tricriticalexponent () was calculated for the La0.7Ca0.1Sr0.2MnO3 sample and found to be 4.76± 0.03, which is very close to the proposed value = 5 for the tricitical exponent. The studiedsamples can be considered as giant magnetocaloric materials for room-temperature refrigeration.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
