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RF 마그네트론 스퍼터링을 이용한 태양전지용 질화 실리콘 반사방지막
최균,최의석,황진하,이수홍,Choi, Kyoon,Choi, Eui-Seok,Hwang, Jin-Ha,Lee, Soo-Hong 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.10
Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.
ZnO의 화학구동력에 의한 $MgAl_2O_4$의 입계이동
최균,조의성,강석중,Choi, Kyoon,Cho, Eu-Seong,Kang, Suk-Joong 한국세라믹학회 1992 한국세라믹학회지 Vol.29 No.11
The chemically induced grain-boundary migration has been studied in MgAl2O4 spinel under ZnO atmosphere. MgAl2O4 compacts been prepared by sintering powder mixture of Al2O3 and MgO at 1$600^{\circ}C$ for 60 h in air. The sintered MgAl2O4 has been heat-treated at 150$0^{\circ}C$ in a ZnO atmosphere. During the heat-treatment grain boundaries have become curved or faceted, and the total area of grain boundaries have increased. In the migrated region, the ZnO content is higher by 6 wt% than that in other regions, indicating that the migration was induced by addition of ZnO. In some shrinking grains, the faceted planes of different grain boundaries for the same grain are parallel to each other. This result provide an experimental support for the coherency strain energy in diffusion layer of the shrinking grain as being the major driving force. Calculated coherency strain energy of MgAl2O4 shows the maximum at {111} planes and the minimum at {100} planes. Although the minimum surface energy is at {111} planes, the faceted moving boundaries are expected to be {100} planes because of lowest driving force for the grain-boundary migration.
열필라멘트 CVD에서 전압 인가에 의한 다이아몬드의 핵생성 촉진
최균,강석중,황농문,Choi, Kyoon,Kang, Suk-Joong L.,Hwang, Nong-M. 한국세라믹학회 1997 한국세라믹학회지 Vol.34 No.6
The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.
폴리실리콘용 유동층 반응기에서 탄화규소의 내구성과 적합성 연구
최균(Kyoon Choi),서진원(Jin Won Seo),한윤수(Yoon Soo Hahn),손민수(Min Soo Son) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.6
In order to utilize silicon carbide (SiC) as an inner part of fluidized bed reactor (FBR) for manufacturing poly-silicon, we have carried out the thermodynamic calculation on the overall reactions including poly-silicon synthesis and compatibility of SiC with FBR process. The resources of silicon included SiH₄(MS), SiHCl₃(TCS) and SiCl₄(STC) and the thermodynamic yield of the FBR with MS, TCS and STC were compared each other with variable range of temperature, pressure and hydrogen to silicon ratio. The silicon yield of MS, TCS and STC were 100%, 28% and 4%, respectively, throughout the conventional FBR conditions. Silicon carbide having high hardness and strength showed strong resistance to granule collisions during the FBR process using a lab-scale reactor. And it also showed quite good compatibility with the typical FBR processes of MS and TCS resources.
탄화규소 CVD 공정에서 CH3SiCl3-H2과 C3H8-SiCl4-H2계의
최균 ( Kyoon Choi ),김준우 ( Jun Woo Kim ) 대한금속재료학회 ( 구 대한금속학회 ) 2012 대한금속·재료학회지 Vol.50 No.8
In order to understand the difference in SiC deposition between the CH3SiCl3-H2 and C3H8-SiCl4-H2 systems, we calculate the phase stability among B-SiC, graphite and silicon. We constructed the phase-diagram of B-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the C3H8-SiCl4-H2, and 5000 in the CH3SiCl3-H2 system, This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the C3H8-SiCl4-H2 system and 3 for the C3H8-SiCl4-H2 system. Because the C/Si ratio is fixed at 1 in the CH3SiCl3-H2 system while it can be variable in the C3H8-SiCl4-H2 system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the C3H8-SiCl4-H2 system.
대량 생산용 SiC CVD 리엑터에의 전산유체역학 시뮬레이션의 적용
서진원,최균,Seo, Jin-Won,Choi, Kyoon 한국세라믹학회 2013 한국세라믹학회지 Vol.50 No.6
Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.
FEM 시뮬레이션을 이용한 tonpilz 트랜스듀서의 먼지 응집 거동
서진원,최균,이호용,Seo, Jin-Won,Choi, Kyoon,Lee, Ho-Yong 한국결정성장학회 2016 韓國結晶成長學會誌 Vol.26 No.6
Tonpilz 트랜스듀서를 이용한 미세먼지의 포집 거동을 살펴보기 위하여 유한요소법(FEM) 시뮬레이션을 이용하여 미세먼지의 응집 거동을 모사하였다. 원판형 head mass의 두께와 tail mass의 직경, 그리고 고정 볼트의 깊이를 트랜스듀서의 형상 변수로 고려하였다. 도넛형 압전체의 소재로는 기존의 PZT-4 소재와 서로 다른 특성의 두 가지 압전 단결정에 대하여 그 출력에 미치는 형상 변수의 최적화를 구현하였고 이를 통하여 얻은 트랜스듀서를 이용하였을 때 나타나는 미세먼지의 응집 거동을 다중 물리해석 S/W인 COMSOL을 이용하여 모사하였다. Dust-collecting behavior of tonpilz transducer was simulated with finite-element-method (FEM) software. In order to optimize the performance of tonpilz transducer, the shape factors including the thickness of head mass, the diameter of tail mass and the depth of bolt were analyzed as variables. As a vibrating energy source, the piezoelectric materials was also tested with PZT-4 and two kinds of piezoelectric single crystals. The output power of the transducer was maximized with the shape factors and then the behavior of the dust-collection was demonstrated with the multi-physics software, COMSOL.
유리,최균,피재환,김유진,Yu, Ri,Choi, Kyoon,Pee, Jae-Hwan,Kim, YooJin 한국분말야금학회 2013 한국분말재료학회지 (KPMI) Vol.20 No.3
This manuscript reports on compared color evolution about phase transformation of ${\alpha}-FeOOH@SiO_2$ and ${\beta}-FeOOH@SiO_2$ pigments. Prepared ${\alpha}$-FeOOH and ${\beta}$-FeOOH were coated with silica for enhancing thermal properties and coloration of both samples. To study phase and color of ${\alpha}$-FeOOH and ${\beta}$-FeOOH, we prepared nano sized iron oxide hydroxide pigments which were coated with $SiO_2$ using tetraethylorthosilicate and cetyltrimethyl-ammonium bromide as a surface modifier. The silica-coated both samples were calcined at high temperatures (300, 700 and $1000^{\circ}C$) and characterized by scanning electron microscopy, CIE $L^*a^*b^*$ color parameter measurements, transmission electron microscopy and UV-vis spectroscopy. The yellow ${\alpha}$-FeOOH and ${\beta}$-FeOOH was transformed to ${\alpha}-Fe_2O_3$ with red, brown at 300, $700^{\circ}C$, respectively.