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Tris DMASi 소스를 이용한 SiON 제작 및 반사방지막 응용
연제민(Je-Min Yeon),강상준(Sang-Jun Kang),정상현(Sang-Hyun Jeong),찬타솜바스 시사바이(Chanthasombath Sisabay),김광호(Kwang-Ho Kim) 한국정보기술학회 2015 한국정보기술학회논문지 Vol.13 No.3
In the study, SiON film was deposited on silicon substrate with tris DMASi source, NH3 and mix gas without silane gas by plasma enhanced chemical vapor deposition(PECVD). SiON film was deposited by adjustment of gas ratio, working pressure, substrate temperature and RF power. And its reflective index and deposition rate were measured. Chemical composition ratio and electrical characteristics of SiON film was measured by XPS, C-V and I-V. Efficiency and Characteristic were compared solar cells of SiON/n+/p-Si(100) using tris DMASi source and SiNX/n+/p-Si(100). At the result SiON/n+/p-Si(100) solar cell by using tris DMASi source was measured similar 14.40% of efficiency and 0.90 of quantum efficiency with SiNX/n+/p-Si(100), SiON film can be fabricated and applied to anti-reflection coating.
민관홍(Kwan-Hong Min),유정재(Jeong-Jea Yu),정상현(Sang-Hyun Jeong),찬타솜바스 시사바이(Chanthasombath Sisabay),김광호(Kwang-Ho Kim) 한국정보기술학회 2014 한국정보기술학회논문지 Vol.12 No.1
In this study, fabrication and properties of MIS solar cell by using screen printing method which has advantage of mass production, low price, and simple processing compared with vacuum deposition method were analyzed. To fabricate MIS capacitor, Aluminum oxide(Al₂O₃) thin film(1nm) which has a good electrical and optical properties at visible ray region was deposited on p-Si(0.5-2Ω·cm) by RPALD(Remote Plasma Atomic Layer Deposition) and Ag, Al metal pastes used as front and back contact were printed using screen printing method then annealing by RTA(Rapid Thermal Annealing). Electrical properties of MIS capacitors were measured such as leakage current and C-V by pA meter(HP 4140B) and LCR meter(HP 4284A), respectively. Base on the result of MIS capacitor, MIS Solar cell using screen printing method was fabricated and electrical properties(I-V) was analyzed by solar simulator at STC(Standard Test Condition) 100mW/㎠, 25℃. In addition, spectral response properties of MIS solar cell was measured from 350nm to 1100nm wavelength by quantum efficiency measurement system.
CVD/ALD 장비를 이용한 a-Si 및 SiOx 박막의 특성
주재홍(Jae-Hong Joo),강상준(Sang-Jun Kang),찬타솜바스 시사바이(Chanthasombath Sisabay),천홍빈(Hong-Bin Chen),김광호(Kwang-Ho Kim) 한국정보기술학회 2016 한국정보기술학회논문지 Vol.14 No.11
The a-Si and SiOx ultra thin films were fabricated to investigate for the properties by using CVD/ALD combination system. In order to confirm the saturation point of the self reaction, the differences in deposition thickness and the refractive index were determined by the varying injection time of DIPAS source and O2 and Ar gas. The differences of the ALD Window section, RF power and process temperature were confirmed. Furthermore, the electrical characteristics and the chemical composition were evaluated, the a-Si film was deposited by varying the substrate temperature and RF power to confirm the deposition rate. The dielectric constant of the SiOx thin film calculated by a fabricated MOS capacitor (εox) was about 5.22, and the crystallinity of the silicon thin film deposited on quartz substrate at a substrate temperature of 400 ~ 700℃ measured by XRD system was amorphous phase.