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수소 분위기에서 유연 기판 위에 증착된 IZO 박막의 구조적 및 전기적 특성
조담비,이규만 한국반도체디스플레이기술학회 2012 반도체디스플레이기술학회지 Vol.11 No.1
In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, Ar+H2) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of H2 under Ar+H2. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.
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Seong-Ho Han,조담비,이규만 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.-
We investigate the effect of the flow rate of oxygen and hydrogen gases on the characteristics of OLEDs (organic light emitting diodes) with Al-doped ZnO (AZO) anodes. The AZO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at 300°C. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 5 sccm. The AZO thin films were preferentially oriented to the (002) direction regardless of the ambient gase used. The electrical resistivity of the AZO thin films increased with increasing O2 flow rates, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly the same regardless of the H2 flow rate used. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed an average transmittance of over 85% in the visible range. The optical band gap of the AZO films increased with increasing H2 flow rates, whereas the optical band gap of the AZO films deposited in an O2 atmosphere decreased with increasing O2 flow rates. The current density and the luminance of the OLED devices with AZO thin films deposited in 5 sccm of H2 ambient gas were the highest among all the films. The optical band gap energy of AZO thin films plays a major role in OLED device performance, especially the current density and luminance.
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