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장문형,J. M. Choi,C. N. Whang,H. K. Jang,B. G. Yu 한국진공학회 2005 Applied Science and Convergence Technology Vol.14 No.3
Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of In2O3 (90%) + SnO2 (10%). We investigated the effects of the annealing temperature (Ta) between 200 and 350 ℃ for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of 350℃. The sodium composition of the ITO film annealed at 350℃ for 30 min was 2.5% at the surface. Also the sodium peak almost disappeared after 3 keV Ar+ sputtering for 6 min. The visible transmittance of all ITO films was over 77%.
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Gd₂O₃: Eu³+ 형광체 박막의 결정성에 따른 발광특성 연구
장문형(M. H. Jang),최윤기(Y. K. Choi),정권범(K. B. Chung),황보상우(S. W. Whangbo),장홍규(H. K Chang),노명근(M. K. Noh),조만호(M. H. Cho*),손기선(K. S. Sohn),김창해(C. H. Kim),황정남(C. N. Whang) 한국진공학회(ASCT) 2003 Applied Science and Convergence Technology Vol.12 No.4
Si(111) 표면위에 Gd₂O₃:Eu³+ 결정성 형광체 박막을 이온화 집단체 증착방법으로 증착하여 이온선을 주입, 결정을 파괴한 후에 열처리를 통하여 결정구조를 변화시켰다. 초기 생장시의 결정성은 고에너지 전자회절 (RHEED)을 통해 확인하고, X선 회절과 적외선 분광법을 이용하여 시료의 결정구조의 변화를 관측하였다. Near Edge X-ray Absorption Fine Structure (NEXAFS)를 통해 전자구조의 변화를 확인하였다. 이러한 변화들이 발광 특성에 미치는 영향을 Photoluminescence (PL), Cathodoluminescence (CL), 그리고 Vacuum Ultraviolet (VUV) spectrum으로 알아보았다. 본 연구는 결정구조에 의해 변회된 전자구조가 형광체 박막의 발광특성에 미치는 영향을 보고한다. Epitaxial Gd₂O₃:Eu³+ luminescent thin films have been grown on Si(111) substrates using Ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-IR) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL), and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.
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