http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
PLD 법으로 제작된 PLZT 박막의 산소압에 따른 구조 및 전기적 특성
장낙원,Jang, Nak-Won 한국마린엔지니어링학회 2006 한국마린엔지니어링학회지 Vol.30 No.8
The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.
발전기 보호제어를 위한 Bay Controller 설계에 관한 연구
張樂元(Nak-Won Jang),禹天熙(Chun-Hee Woo),李聖煥(Sung-Hwan Lee) 대한전기학회 2008 전기학회논문지 P Vol.57 No.1
In this paper, we designed the bay control unit that is based on the microprocessors and integrates with the new technology of electrical, electronic, and mechanical fields. Nowadays the customers have required much more integrated multi-protection relay, monitoring, control devices and power management for better and easier maintenance, performance, electrical system analysis and communication according to new trend of switchboard. This bay controller supplies those requirements of customers with easy handling and operation. This bay controller provides a graphic display with rear-lit liquid crystal LCD and push buttons as kinds of HMI(Human Machine Interface). This bay controller provides the parameter setting program, control setting program, various editors and fault recording and analysis program on Windows/95/98/NT/2000/XP for HMI. In addition, this bay controller can be set manually and this manual setting function helps user to interface easily.
레이저 에블레이션법으로 제작된 PLZT 박막의 구조 및 전기적 특성에 관한 연구
장낙원,마석범,백동수,최형욱,박창엽,Jang, Nak-Won,Mah, Suk-Bum,Paik, Dong-Soo,Choi, Hyung-Wook,Park, Chang-Yub 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.10
PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, $O_2$ pressure 200m Torr. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1550 and dielectric loss was 0.03 at 10kHz. At 2/70/30 PLZT thin film, coercive field and remnant polarization was respectively 19[kV/cm], 8[$\mu$C/$\textrm{cm}^2$]. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.
장낙원,Jang Nak-Won 한국마린엔지니어링학회 2005 한국마린엔지니어링학회지 Vol.29 No.6
PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.
발열 전극에 따른 상변화 메모리 소자의 전자장 및 열 해석
장낙원,마석범,김홍승,Jang, Nak-Won,Mah, Suk-Bum,Kim, Hong-Seung 한국마린엔지니어링학회 2007 한국마린엔지니어링학회지 Vol.31 No.4
PRAM (Phase change random access memory) is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to change the heater electrode material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of heater electrode material parameters using finite element analysis. From the simulation. the reset current of PRAM cell is reduced from 2.0 mA to 0.72 mA as the electrical conductivity of heater is decreased from $1.0{\times}10^6\;(1/{\Omega}{\cdot}m$) to $1.0{\times}10^4\;(1/{\Omega}{\cdot}m$). As the thermal conductivity of heater is decreased, the reset current is slightly reduced. But the reset current of PRAM cell is not changed as the specific heat of heater is changed.
ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성
최형욱,장낙원,박창엽,Choi, Hyung-Wook,Jang, Nak-Won,Park, Chang-Yub 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.2
2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.