http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
인삼진피탕(人蔘陳皮湯)의 기원(基源), 변천과정(變遷過程) 및 구성원리(構成原理)
이한신,이준희,김달래,고병희,이의주,Lee, Han-Shin,Lee, Jun-Hee,Kim, Dal-Rae,Koh, Byung-Hee,Lee, Eui-Ju 사상체질의학회 2011 사상체질의학회지 Vol.23 No.2
1. Objectives: This paper was written to understand the origin, changes and the constructive principles of Insamjinpi-tang(人蔘陳皮湯) 2. Methods: Insamjinpi-tang and other related prescriptions were analyzed in terms of pathology, based on "Dongyisusebowon Chobongwon(東醫壽世保元 草本卷)", "Dongyisusebowon Gabobon(東醫壽世保元 甲午本)", "Dongyisusebowon Sinchukbon(東醫壽世保元 辛丑本)", "Donguisasangsinpyeon(東醫四象新編)" 3. Results and Conclusions: (1) The origin of Insamjinpi-tang is Doksamyangbung-tang(獨蔘良崩湯), which is combination of Yijung-tang(理中湯), and Insamkeji-tang(人蔘桂枝湯) (2) The origin of Insamjinpi-tang was derived from Doksamyangbung-tang of "Dongyisusebowon Gabobon". Insamjinpitang greatly increases Ginseng Radix Alba(人參) when Insamjinpitang was compared with Yijung-tang, Insamkeji-tang. Insamjinpitang put to use Amomi Fructus(砂仁) newly first. (3) The Insamjinpitang composed of 5 herbs, Ginseng Radix Alba(人參), Zingiberis Rhizoma Crudus(生薑), Citrus unshiu (陳皮), Zizyphus jujuba(大棗) and Amomi Fructus(砂仁); Ginseng Radix Alba(人參) and Zingiberis Rhizoma Crudus (生薑) treat Taeumjeung(太陰證) of Soeumin(少陰人) through warming the Stomach(溫胃), Citrus unshiu(陳皮) makes the Yin(陰) downbearing, Zizyphus jujuba(大棗) making harmony between innerside and outerside of body and Amomi Fructus(砂仁) making stable one's mind.
논문 ( Articles ) : 몰리브데늄 촉매상에서 탈황반응과 탈질반응의 상호작용
이한신,구헌서,신명준,김경림 ( Han Shin Lee,Heon Seo Koo,Myung Joon Shin,Kyung Lim Kim ) 한국화학공학회 1989 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.27 No.2
황화 CoMo/γ-Al₂O₃, NiMo/τ-Al₂O₃ 촉매를 사용하여 423-723 K 온도와 10-50×10^5 Pa 압력 그리고 접촉시간 0.015-0.03gcat.hr/㎖ feed 범위에서 thiophene의 수첨 탈황반응과 pyridine의 수첨 탈질반응의 상호작용에 관하여 연구하였다. 연구 결과 thiophene의 수첨 탈황반응은 모든 온도, 압력 범위에서 pyridine에 의해 억제되었으며, pyridine의 수첨 탈질반응은 저온에서는 thiophene에 의해 억제되지만 고온(623K)에서는 촉진되는 효과를 보였고, 또한 thiophene의 첨가는 모든 반응온도, 압력 범위에서 piperidine의 농도를 크게 감소시켰다. 순수 thiophene의 탈황에서는 CoMo 촉매의 활성이 크지만 순수 pyridine이나 thiophen과 pyridine의 혼합반응물의 전화에 있어서는 NiMo 촉매의 성능이 더 우수했다. Simultaneous catalytic hydrodesulfurization (HDS) of thiophene and hydrodenitrogenation (HDN) of pyridine were studied over sulfided CoMo/γ-Al₂O₃ and NiMo/γ-A1₂O₃ catalysts and this study was carried over the range from 423 K to 723 K, from 10×10^5 Pa to 50×10^5 Pa and from 0.015 g-cat.hr/㎖-feed to 0.03 g-cat.hr/㎖-feed of temperature, pressure and contact time, respectively. Pyridine HDN was more difficult than thiophene HDS and thiophene HDS was inhibited by the presence of pyridine at all temperatures and pressures studied. But thiophene had a dual effect on HDN. At low temperatures pyridine HDN was inhibited by the presence of thiophene, but at high temperatures it was enhanced by the thiophene. The formation of piperidine was greatly decreased with the addition of thiophene at all temperatures and pressures. CoMO/γ-A1₂O₃ showed better activity than NiMo/γ-A1₂O₃ for the pure thiophene HDS but NiMO/γ-Al₂O-3 showed greater activity than CoMo/γ-Al₂O₃ for pure pyridine as well as that of mixed feed of thiophene and pyridine.
여행 웹사이트에서 품질과 순수추천고객지수(NPS)가 고객만족과 충성도에 미치는 영향
이한신(Lee, Han-Shin),김판수(Kim, Pan-Soo) 한국서비스경영학회 2017 한국서비스경영학회 학술대회 Vol.2017 No.11
본 연구에서는 여행 웹사이트의 품질에 대한 선행연구들을 분석하여 구성요인들을 조사하고 이러한 여행 웹사이트의 품질요인들이 고객만족 그리고 고객충성도 간 어떠한 관련성을 갖는지 영향관계를 실증분석 하였다. 특히 소비자의 NPS(Net Promoter Score, 순수추천고객지수)에 의한 조절효과를 검증하는데 목적이 있다. 이를 위하여 이론적 고찰을 바탕으로 서비스품질, 정보품질, 기능품질, 디자인품질의 변수들을 세분화하였고 특히 기업성장을 예측하는데 중요한 예측지표인 NPS의 조절효과 간의 관계를 나타내는 PLS 구조방정식모델을 수립하고, 1년 이내에 여행 웹사이트를 사용한 사람들을 대상으로 한 설문조사 결과를 바탕으로 연구모델을 검증하였다. The purpose of this study is to investigate the components of the travel websites by analyzing previous researches on the quality of the websites, to analyze empirically about the influential correlation of these quality factors of the travel websites on customer satisfaction and customer loyalty, and especially to verify the moderate effect of consumers" NPS(Net Promoter Score). For this purpose, based on theoretical considerations, we subdivided the variables of service quality, information quality, functional quality and design quality and in particular we formulated PLS structural equation model which shows the relationship with the moderate effect of NPS that is an important predictive indicator of business growth, verifying the research model based on the results of the questionnaire survey of people who have used travel websites within a year.
600V급 트렌치 게이트 LDMOSFET의 전기적 특성에 대한 연구
이한신(Han Sin Lee),강이구(Ey Goo Kang),신아람(Aram Shin),신호현(Ho Hyun Shin),성만영(Man Young Sung) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
본 논문에서는 기존의 250V급 트렌치 전극형 파워 MOSFET을 구조적으로 개선하여, 600V 이상의 순방향 항복 전압을 갖는 파워 MOSFET을 설계 하였다. 본 논문에서 제안한 구조로 기존의 250V급 트렌치 전극형 파워 MOSFET에 비하여 더욱 높은 순방향 항복 전압을 얻었다. 또한, 기존의 LDMOS 구조로 500V 이상의 항복 전압을 얻기 위해서 100㎛ 이상의 크기를 필요로 했던 반면에, 본 논문에서 제안한 소자의 크기 (vertical 크기)는 50㎛로서, 소자의 소형화 및 고효율화 측연에서 더욱 우수한 특성을 얻었다. 본 논문은 2-D 공정시뮬레이터 및 소자 시뮬레이터를 바탕으로, 트렌치 옥사이드의 두께 및 폭, 에피층의 두께 변화 등의 설계변수와 이온주입 도즈 및 열처리 시간에 따른 공정변수에 대한 시뮬레이션을 수행하여, 본 논문에서 제안한 구조가 타당함을 입증하였다.
여행 웹사이트에서 품질과 순수추천고객지수(NPS)의 조절효과가 고객만족과 재구매의도에 미치는 영향
이한신(Lee, Han-Shin),김판수(Kim, Pansoo) 한국서비스경영학회 2018 서비스경영학회지 Vol.19 No.2
The purpose of this study is to analyze the variables that influence the quality of travel website through previous studies and to investigate the effect of these variables on customer‘s satisfaction and repurchase intention. In addition, we verified the moderating effect of consumers’ Net Promoter Score (NPS) on the relationship between web site quality variables and customer’s satisfaction and repurchase intention. For this purpose, quality variables of travel website such as service quality, information quality, functional quality and design quality are defined. We have developed a structural equation model to demonstrate the relationship between variables and the moderating effect of NPS. We used PLS software to validate the model. For empirical research, we surveyed people who used the travel website within a year.
트렌치 게이트 IGBT 에서의 공정 및 설계 파라미터에 따른 항복 전압 특성에 관한 연구
신호현,이한신,성만영,Shin, Ho-Hyun,Lee, Han-Sin,Sung, Man-Young 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5
In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.
유승우,이한신,강이구,성만영,Yu, Seung-Woo,Lee, Han-Shin,Kang, Ey-Goo,Sung, Man-Young 한국전기전자학회 2007 전기전자학회논문지 Vol.11 No.4
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.