(Bi,La)FeO₃-PbTiO₃ 세라믹스의 자전효과

이은구,이종국,장우양,김선재,이재갑,Lee Eun Gu,Lee Jong Kook,Jang Woo Yang,Kim Sun Jae,Lee Jae Gab 한국재료학회 2005 한국재료학회지 Vol.15 No.2

Magnetoelectric (ME) effects for lanthanum modified $BiFeO_3-PbTiO_3\;(BE-_xPT)$ solid solutions have been investigated. The value of magnetoelectric polarization coefficient, up is 10 times greater than that of $Cr_2O_3$. The results also show that up is due to a linear coupling between polarization and magnetization, and that up is independent of do magnetic bias and ac magnetic field. The ME effect is believed to be significantly enhanced due to breaking of the cycloidal spin state of a long-period spiral spin structure, via randomly distributed charged imperfections.

$Pb(Zr,Ti)O_3$ 강유전체 박막 이력곡선의 변형에 관한 연구

이은구,이종국,이재갑,김선재,Lee, Eun-Gu,Lee, Jong-Guk,Lee, Jae-Gap,Kim, Seon-Jae 한국재료학회 2000 한국재료학회지 Vol.10 No.5

다양한 Zr/Ti 비율을 갖고 있는 강유전체 PZT박막을 졸-겔 법으로 증착하였고 상부 백금전극의 제조방법과 열처리온도의 변화에 따라 강유전체 특성을 측정하여 이력곡선의 변형 원인을 조사하였다. Pt/PZT/Pt 캐패시터는 상부 백금전극을 반응성 이온 식각(RIE) 하는 과정에서 생성된 dc plasma 전압에 의하여 양의 방향으로 분극되었고 도메인 계면에 포획된 전하에 의해 내부전장이 발생되었다. PZT 박막은 sputtering으로 상부전극을 증착하는 과정에서 이력곡선의 중간에 잘룩하게 되는 시효현상이 관찰되었다. 상부전극을 제작한 후 열처리는 포획된 전하흫 제거시켜 양호한 이력곡선 특성을 되찾게 하였다. Zr/Ti 비율이 감소함에 따라 내부전장이 증가하였으며 내부전장이 없어지는 열처리온도가 증가하였다. Deformation in the hysteresis loop of $Pb(Zr,Ti)O_3$ (PZT) thin films with various Zr/Ti ratios has been studied by varying the top electrode preparation method and the annealing temperature. Pt/PZT/Pt capacitors was found to be positively poled due to dc plasma potential generated during reactive ion etch (RIE) of Rt. Internal field is formed by space charges trapped at domain boundaries. Aging phenomenon such as constriction in the middle of the hysteresis loop was observed in the PZT film with top electrode deposited by sputtering. Top electrode annealing restores the hysteresis loop by removing the space charges. As Zr/Ti ratio decrease, voltage shift increases and an-nealing temperature at which internal field disappears also increases.

수치해석을 이용한 전력 BJT의 정특성 분석

이은구,윤현민,김철성,Lee, Eun-Gu,Yun, Hyun-Min,Kim, Cheol-Seong 한국전기전자학회 2002 전기전자학회논문지 Vol.6 No.2

수치해석을 이용하여 전력 BJT의 정특성을 분석하는 방법을 제안한다. 고농도의 불순물이 주입된 영역에서 반송자 농도를 정교하게 구하기 위해 Fermi-Dirac 통계를 고려하며, 베이스 영역에서 재결합 전류를 계산하기 위해 Philips Unified 이동도 모델과 SRH 및 Auger 생성-재결합 모델을 사용한다. 제안된 방법을 검증하기 위해 현재 산업체에서 사용중인 전력 BJT의 베이스 전류를 $1.0[{\mu}A]$에서부터 $3.5[{\mu}A]$까지 $0.5[{\mu}A]$ 단위로 증가시키면서 컬렉터 전류의 실측치와 BANDIS와 비교한 결과 8.9%이내의 상대오차를 보였다. An algorithm for analyzing the characteristics of the power BJT using numerical analysis method is proposed. The Fermi-Dirac statistics is used to calculate the carrier concentration in highly doped region. Philips Unified mobility model, SRH model and Auger model is used to calculate the recombination current of base region. To verify the accuracy of the proposed method, the collector current of BANDIS is compared with the measured data in the condition of the base current increased from $1.0[{\mu}A]\;to\;3.5[{\mu}A]$. The collector current of BANDIS show a maximum relative error within 8.9% compared with the measured data.

주사 힘 현미경에 의한 (001) Pb(Mg_1/3Nb_2/3)O₃-x%PbTiO₃ 단결정의 도메인 구조 및 분극 스위칭 관찰

이은구,Lee, Eun-Gu 한국세라믹학회 2010 한국세라믹학회지 Vol.47 No.4

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

Lanthanum이 첨가된BiFeO₃−PbTiO₃ 세라믹스의 전자효과에 대한 연구

이은구,김선재,이재갑,Lee, Eun-Gu,Kim, Sun-Jae,Lee, Jae-Gab 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.6

Ferroelectric, magnetic, and magnetoelectric effects for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics have been investigated. The data show that magnetoelectric polarization coefficient, ${\alpha}_p$ is due to a linear coupling between polarization and magnetization, and that ${\alpha}_p$ is independent of dc magnetic bias and ac magnetic field. The values of ${\alpha}_p$ and magnetic induced susceptibility for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics are much larger than those of single $BiFeO_3$ crystal. We believe that the magnetoelectric effect is significantly enhanced by breaking of the cycloidal spin state of a long-period spiral spin structure due to randomly distributed charged imperfections.

SrTiO₃기판 위에 증착한 BiFeO₃박막의 강유전 및 자기적 특성

이은구,김선재,이재갑,Lee, Eun-Gu,Kim, Sun-Jae,Lee, Jae-Gab 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.6

$BiFeO_3$ films were hetero-epitaxially grown on $SrTiO_3$ substrate with a various orientation by pulse laser deposition. $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for $BiFeO_3$ thin films grown on $SrTiO_3$ substrate comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

Scanning Force Microscope에 의한 (001) PMN-x%PT 단결정의 도메인 구조에 대한 연구

이은구,이재갑,Lee, Eun-Gu,Lee, Jae-Gab 한국재료학회 2009 한국재료학회지 Vol.19 No.6

The domain structures of annealed (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x = 10, 20, 30, 35, and 40 at% were investigated by Polarized Optical Microscopy (POM) and Scanning Force Microscopy (SFM) in the piezoresponse mode. Both Polar Nano-Domains (PND) and long strip-like domains were clearly observed. The results also showed how the domain structure changed between phases with an increasing x in the PMN-x%PT crystals and the domain hierarchy on various length scales ranging from 40 nm to 0.1 mm. Distorted pseudo-cubic phase (x < 20%) consisted of PNDs that did not self-assemble into macro-domain plates. The rhombohedral phase (x = 30%) consisted of PNDs that began to self-assemble into colonies along preferred {110} planes. The monoclinic phase (x = 35%) consisted of miniature polar domains on the nm scale, whereas, the tetragonal phase (x = 40%) consisted of {001} oriented lamella domains on the mm scale that had internal nano-scale heterogeneities, which self-assembled into macro-domain plates oriented along {001} the mm scale.

저압 화학 기상 증착법으로 제작한 다결정 실리콘의 표면 형태 및 결정 성장

이은구,박진성,이재갑,Lee, Eun-Gu,Park, Jin-Seong,Lee, Jae-Gap 한국재료학회 1995 한국재료학회지 Vol.5 No.2

The surface morphology and grain growth of amophous silicon (a-Si) films deposited by low pressure chemical vapor deposition (LPCVD) have been investigated as a function of deposition and in sltu annealing condition. The film deposited at the amorphous to polycrystalline transition temperature has an extra-rough, rugged surface with (311) t.exture. At the same deposition temperature, the grain structure tends to shirr. from the polycrystalline to the amorphous phase with increasing the film thickness. It is found that nucleation of a-Si during in situ annealing at the transition temperature without breaking the vacuum starts to occur from surface Si atom migration in contrast to a heterogeneous nucleation during film deposition. 저압 화학 기상증착법으로 제작한 비정질 실리콘의 표면 형태 및 결정 성장 과정을 증착조건과 열처리 조건의 변화에 따라 조사하였다. 비정질에서 결정으로 변화하는 전이온도인 570~$590^{\circ}C$에서 증착한 시편은 (311)조직의 거친 표면으로 성장하였다. 같은 증착 온도에서 두께가 두꺼울수록 다결정에서 비정질로 변화하였다. 증착하는 과정에서의 결정화는 기판에서부터 시작되지만, 진공상태를 그대로 유지하고 비정질 실리콘을 전이온도에서 열처리하면 표면 실리콘 원자가 이동하여 결정화하였다.

(001) Pb(Mg_1/3Nb_2/3)O₃-x%PbTiO₃ 단결정의 도메인 구조 및 상전이

이은구,Lee, Eun-Gu 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.3

The domain structures, dielectric properties, and phase transformation of (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20, 30, 35, and 40 mole% have been investigated. PMN-20%PT consists of polar nano-domains (PND) which do not self-assemble into macro-domain plates. PMN-30%PT consists of PNDs which begin to self-assemble into colonies along preferred {110} planes. PMN-35PT consists of miniature polar domains on the nm scale. PMN-40%PT consists of {001} oriented lamella domains on the mm scale that have internal nano-scale heterogeneities. The dielectric properties of poled (001) PMN-x%PT single crystals have been measured for orientations both parallel and perpendicular to the [001] poling direction. The results of the temperature dependence of the dielectric constant and mesh scans for the 30%PT sample demonstrate that the initial monoclinic phase changes to single domain tetragonal phase and to cubic phase with increasing temperature.

습식 산화한 LPCVD Silicon Nitride층의 물리적, 전기적 특성

이은구,박진성,Lee, Eun-Gu,Park, Jin-Seong 한국재료학회 1994 한국재료학회지 Vol.4 No.6

실리콘 질화막을 습식 산화하여 제작한 산화막/질화막 복합층과 이 박막의 산화막을 식각하여 제작한 oxynitride 박막의 물리적, 전기적 특성을 기술하였다. $900^{\circ}C$에서 산화시간이 증가함에 따라 산화막/질화막의 경우에는 축전용량은 급격히 감소하였으나 절연 파괴전장은 증가하였다. Oxynitrite박막은 축전용량과 절연파괴 전장이 모두 증가하였다. Oxynitride박막의 경우 축전 용량의 증가와 절연 파괴 전장이 증가하였는데 이는 유효 주께 감소와 박막의 양질화에 기인하였다. 또한, 산화 시강의 증가에 따라 Oxynitride박막의 TDDB특성과 초기 불량율도 향상되었다. 결론적으로 Oxynitride박막은 dynamic기억소자의 유전체 박막으로 사용하기에 적합하였다. The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.