공정가스와 RF 주파수에 따른 웨이퍼 표면 텍스쳐 처리 공정에서 저반사율에 관한 연구

윤명수,현덕환,진법종,최종용,김정식,강형동,이준신,권기청,Yun, Myoung-Soo,Hyun, Deoc-Hwan,Jin, Beop-Jong,Choi, Jong-Young,Kim, Joung-Sik,Kang, Hyoung-Dong,Yi, Jun-Sin,Kwon, Gi-Chung 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.2

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology. 일반적으로 결정질 실리콘 태양전지에서 표면에 텍스쳐링(texturing)하는 것은 알칼리 또는 산성 같은 화학용액을 사용하고 있다. 그러나 실리콘 부족으로 실리콘의 양의 감소로 인하여 웨이퍼 두께가 감소하고 있는 추세에 일반적으로 사용하고 있는 습식 텍스쳐링 방법에서 화학용액에 의한 많은 양의 실리콘이 소모되고 있어 웨이퍼의 파손이 심각한 문제에 직면하고 있다. 그리하여 습식 텍스쳐링 방법보다는 플라즈마로 텍스쳐링할 수 있는 건식 텍스쳐링 방법인 RIE (reactive ion etching) 기법이 대두되고 있다. 그리고 습식 텍스쳐링으로는 결정질 실리콘 태양전지의 반사율을 10% 이하로는 낮출 수가 없다. 다결정 실리콘 웨이퍼 표면에 텍스쳐링을 하기 위하여 125 mm 웨이퍼 144개를 수용할 수 있는 대규모 플라즈마 RIE 장비를 개발하였다. 반사율을 4% 이하로 낮추기 위하여 공정가스는 $Cl_2$, $SF_6$, $O_2$를 기반으로 RIE 텍스쳐링을 하였고 텍스쳐링의 모양은 공정가스, 공정시간, RF 주파수 등에 의해 조절이 가능하였다. 본 연구에서 RIE 공정을 통하여 16.1%의 변환효율을 얻었으며, RF 주파수가 텍스쳐링의 모양에 미치는 영향을 살펴보았다.

RIE 표면 텍스쳐링 모양에 따른 결정질 실리콘 태양전지의 영향

박인규,윤명수,현덕환,진법종,최종용,김정식,강형동,권기청,Park, In-Gyu,Yun, Myoung-Soo,Hyun, Deoc-Hwan,Jin, Beop-Jong,Choi, Jong-Yong,Kim, Joung-Sik,Kang, Hyoung-Dong,Kwon, Gi-Chung 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.4

다결정 실리콘 웨이퍼 표면에 대면적 reactive ion etching (RIE) 장비로 표면 텍스쳐를 형성한 뒤 태양전지를 제작하였다. 웨이퍼 표면에 텍스쳐를 형성하는 것은 광학적 손실을 줄이기 위해 일반적으로 사용되는 방법으로 alkaline etching이 사용된다. 그러나 다결정 실리콘 태양전지의 경우 재료의 결정 방향에 따라 식각되는 alkaline etching은 텍스쳐링의 모양을 제어할 수 없어 효과적이지 못하다. 이와 달리 플라즈마 식각방법을 사용하면 표면 텍스쳐의 모양을 효과적으로 제어하여 조금 더 낮은 반사율을 얻을 수 있다. 하지만 텍스쳐 모양 조절로 얻은 낮은 반사율이 항상 높은 변환효율을 얻을 수 있는 것은 아니다. 본 연구에서는 대면적 RIE 공정 조건별로 얻은 태양전지 표면 텍스쳐의 모양에 따라 각각의 반사율과 양자효율 및 변환효율이 미치는 영향을 살펴보았다. We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.

전하밀도파 이론으로 결정질 태양전지의 입사각에 따른 단락전류밀도 변화 연구

서일원,구제환,윤명수,조태훈,이원영,조광섭,권기청,Seo, Il Won,Koo, Je Huan,Yun, Myoung Soo,Jo, Tae Hoon,Lee, Won Young,Cho, Guang Sup,Kwon, Gi Chung 한국진공학회 2013 Applied Science and Convergence Technology Vol.22 No.4

광 입사각에 따른 태양전지의 양자효율을 전류의 출력으로 변환시켜 측정하였다. 기존의 태양전지의 원리는 태양전지가 태양광을 받았을 때 전자와 전공으로 분리되어 전류가 흐르게 된다는 것이었다. 그렇지만 저자들 중에 일부가 얼마 전에 태양전지원리를 새롭게 주장한 바 있다. 그 이론은 전하밀도파(charge density wave)들이 고정(pinning) 되었을 때, 이 고정 전위벽(pinning potential barrier)을 태양 광에 의해 넘을 수 있어서 전자 덩어리에 의한 전류 즉 단락전류($I_{SC}$)가 가능하다는 것이었다. 본 실험에서는 태양광의 입사각에 따른 태양전지의 단락전류밀도 ($J_{SC}$)를 측정하여 비교해본 결과 측정값들과 전하밀도파 이론과 매우 일치함을 보인다. We measure solar currents transformed from quantum efficiency as a function of incident angles of solar lights. According to conventional models for solar cells, solar currents can be induced when electrons are separated into electrons and holes in the presence of incident solar lights. On the contrary, solar currents can be possible at the time when pinned charge density waves go beyond the pinning potential barrier under the influence of incident solar beams suggested by some authors. In this experiment, measured solar currents and our theory are in good correspondence to confirm the angle dependence of solar lights.

대기압 플라즈마의 선택적 도핑 공정에서 온도에 의한 인(Phosphorus)의 확산연구

김상훈(Sang Hun KIM),윤명수(Myoung Soo Yun),박종인(Jong In Park),구제환(Je Huan Koo),김인태(In Tae Kim),최은하(Eun Ha Choi),조광섭(Guangsup Cho),권기청(Gi-Chung Kwon) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.5

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

새로운 대기압 플라즈마 소스를 이용한 결정질 실리콘 태양전지 인산 도핑 가능성에 관한 연구

조이현(I-Hyun Cho),윤명수(Myoung-Soo Yun),조태훈(Tae-Hoon Jo),권기청(Gi-Chung Kwon) 한국조명·전기설비학회 2013 조명·전기설비학회논문지 Vol.27 No.6

Furnace is currently the most important doping process using POCl₃ in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid(H₃P0₄). Metal tube injected Ar gas was inputted 5 ㎸ of a low frequency(scores of ㎑) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid(H₃P0₄) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 ㎃. We check the doping depth that 287 ㎚ at 90 s and 621 ㎚ at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

펄스변조의 듀티비 변경에 따른 DBD 대기압 플라즈마 특성 연구

박종인,황상혁,조태훈,윤명수,곽형신,진기남,전부일,최은하,권기청,Park, Jong-in,Hwang, Sang-hyuk,Jo, Tae Hoon,Yun, Myoung Soo,Kwak, Hyoung sin,Jin, Gi nam,Jeon, Buil,Choi, Eun Ha,Kwon, Gi-Chung 한국재료학회 2015 한국재료학회지 Vol.25 No.11

Atmospheric pressure plasma is used in the biological and medical fields. Miniaturization and safety are important in the application of apply atmospheric plasma to bio devices. In this study, we made a small, pocket-sized inverter for the discharge of atmospheric plasma. We used pulse power to control the neutral gas temperature at which the, when plasma was discharged. We used direct current of 5 V of bias(voltage). The output voltage is about 1 to 2 kilo volts the frequency is about 80 kilo hertz. We analyzsed the characteristics of the atmospheric plasma using OES(Optical emission spectroscopy) and the Current-Voltage characteristic of pulse power. By calculating of the current voltage characteristics, we were able to determine that, when the duty ratio increased, the power that actually effects the plasma discharge also increased. To apply atmospheric plasma to human organisms, the temperature is the most important factor, we were able to control the temperature by modulating the pulse power duty ratio. This means we can use atmospheric plasma on the human body or in other areas of the medical field.

새로운 대기압 플라즈마 소스를 이용한 결정질 실리콘 태양전지 인(P) 페이스트 도핑에 관한 연구

조이현(Cho, I-Hyun),윤명수(Yun, Myoung-Soo),조태훈(Jo, Tae-Hoon),노준형(Rho, Junh-Young),전부일(Jeon, BuII),김인태(Kim, In-Tae),최은하(Choi, Eun-Ha),조광섭(Cho, Guang-Sup),권기청(Kwon, Gi-Chung) 한국신재생에너지학회 2013 신재생에너지 Vol.9 No.2

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.

산소 유량별 플라즈마 방출광원 세기에 따른 전자온도 진단과 산화주석박막 특성연구

박혜진(Hye Jin Park),최진우(Jin-Woo Choi),조태훈(Tae Hoon Jo),윤명수(Myoung Soo Yun),권기청(Gi-Chung Kwon) 한국표면공학회 2016 한국표면공학회지 Vol.49 No.1

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.