http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
도핑되지 않은 비정질 실리콘의 고밀도 $Cl_2$/HBr/$O_2$플라즈마에 의한 식각 시 나칭효과
유석빈,김남훈,김창일,장의구 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8
The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.
장의구,유석빈 중앙대학교 기술과학연구소 1989 기술과학연구소 논문집 Vol.19 No.-
Very thin gate oxide(100-300Å) MOS capacitor has been fabricated. The effect of series resistance must be calculated and the exact metal-semiconductor work function difference should be obtained to get the fixed oxide charge density exisiting in oxide. Dilute oxidation make easy to control oxide thickness and reduce fixed oxide charge density. In case of dilute oxidation, fixed oxide charge density depends on oxidation time. If oxide is very thin, the annealing effect is ignored.