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나노결정 InGaZnO 산화물 박막트랜지스터와 비결정 InGaZnO 산화물 박막트랜지스터의 소자 신뢰성에 관한 비교 연구
신현수,안병두,임유승,김현재,Shin, Hyun-Soo,Ahn, Byung-Du,Rim, Yoo-Seung,Kim, Hyun-Jae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.
김창은(Chang Eun Kim),안병두(Byung Du Ahn),전경아(Kyung Ah Jeon),손효정(Hyo Jeong Son),김건희(Gun Hee Kim),이상렬(Sang Yeol Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate. the diameter of nanowires is varied between about 60 and 100 ㎚, and the length of nanowires is varied between about 2 and 4 ㎛. The X -ray diffraction (XnD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 ㎚ with negligible visible emission.
Thermally stability of transparent Ga-doped ZnO thin films for TCO applications
오상훈(Sang Hoon Oh),안병두(Byung Du Ahn),이충희(Choong Hee Lee),이상렬(Sang Yeol Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Highly conductive and transparent films of Ga-doped ZnO have been prepared by pulsed laser deposition using a ZnO target with 3 wt% Ga₂O₃ dopant. Films with the resistivity as low as 3.3×10?⁴ Ω㎝ and the transmittance above 80 % at the wavelength of 400 to 800 ㎚ can be fabricated on glass substrate at room temperature. It is shown that a stable resistivity for the use in oxidation ambient at high temperature can be obtained for the films. Heat treatments were performed to examine the thermal stability of ZnO and GZO films at ptcmperature range from 100℃ to 400℃ in O₂ ambient for 30 minutes. The resistivity of ZnO film annealed at 400℃ increased by two orders of magnitude, in case of GZO film was relatively stable up to at 400℃. For practical applications at high temperatures the thermal stability of resistivity of GZO thin films might become an advantage for transparent electrodes.
Transparent ZnO thin film transistor with long channel length of 1㎜
이충희(Choong Hee Lee),안병두(Byung Du Ahn),오상훈(Sang Hoon Oh),김건희(Gun Hee Kim),이상렬(Sang Yeol Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, HfO₂ as a gate insulator. GZO and HfO₂ layers arc prepared by using a pulsed laser deposition and intrinsic ZnO layers arc fabricated by using an rf-magnetron sputtering, respectively. The transparent TIT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as 11.7 ㎠/Vs and a drain current on-to-off ratio of about 10?.
김동림(Dong Lim Kim),김건희(Gun Hee Kim),장현우(Hyun Woo Chang),안병두(Byung Du Ahn),이상렬(Sang Yeol Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of 9.684×10¹? ㎝?³, resistivity of 2.54×10?³ Ω㎝, and mobility of 25.37 ㎠/Vs. Photoluminescence (PL) spectra of As doped n-type ZnO thin films reveal neutral acceptor bound exciton (A?X) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy (E<SUB>A</SUB>) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X -ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, As<SUB>zn</SUB>-2V<SUB>zn</SUB>, in which the As substitutes on the Zn site, rather than simple model, Aso. in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an un doped n-type ZnO layer on an As doped p-type ZnO layer.
초미세 결정립 Ti- 6Al- 4V 합금의 저온 초소성 거동
고영건,안병두,신동혁,이종수 대한금속재료학회 2004 대한금속·재료학회지 Vol.42 No.10
Superplasticity of ultra-fine grained (UFG) Ti-6A1-4V alloy processed by equal channel angular (ECA) pressing was investigated with the variation of strain rate and temperature. Initial coarse equiaxed grains (11 μm in diameter) were significantly refined to =0.3 μm without changing volume fraction after 4 times of isothermal ECA pressing at 600℃. Tensile tests of both coarse grained specimens and UFG specimens were performed at temperatures of 600℃, 650℃ and 700℃, respectively, and at strain rates of 10^(-4)/s to 10^(-2)/s. UFG structures exhibited considerably higher elongations than those of coarse grained specimens at the same conditions of temperatures and strain rates. The results indicated low-temperature superplasticity (LTS) could be achieved by using UFG structures. Also, it was found in this study that, in spite of non-equilibrium state due to intense plastic straining, grain size were found to be an important factor in controlling overall superplasticity of UFG structure. A plastic instability during superplastic deformation of UFG Ti-6A1-4V alloy was discussed in relation to Hart's criterion. (Received June 2, 2004)