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입자온도 분포를 고려한 탄소입자와 산소에서의 이상폭발현상에 관한 연구
승성표,백승욱 대한기계학회 1988 대한기계학회논문집 Vol.12 No.5
본 연구에서는 고체연소미립자로써 탄소입자와 산화제로써 순수 산소를 사용 하였으며, 매우 높은 대류 열 전달 상태에서 탄소입자 표면의 대류 열저항과 고체 내 부의 전도 열 저항에 의하여 발생하는 탄소입자 내부의 온도구배를 고려하여 탄소입자 와 순수 산소의 혼합물에 있어서 이상 폭발현상을 수치적으로 연구하였다. In this study the structure of a two phase detonation has been numerically investigated through the assumption of a steady and one-dimensional flow in the suspension of carbon particles and pure oxygen. The bow shock formation in front of carbon particles has been taken into consideration when the relative velocity of gas flow with respect to the particle exceeds the local speed of sound. But its effect was found to be very limited to the induction zone only. Furthermore the interior particle temperature distribution has been considered in this work. It was found that the inner temperature gradient was very steep in the region of high relative velocity. On the while the temperature distribution inside the particle was almost uniform in the region of low relative velocity. Overall, the effect of the interior particle temperature distribution has been significant in the two phase detonation.
Fluidized Bed에서 화학증착법에 의해 증착된 열분해 탄소의 특성
승성표,이재영,진억용 한국세라믹학회 1984 한국세라믹학회지 Vol.21 No.2
The characteristic of pyrolytic carbon deposited in a fluidized bed as measured by density apparent crystallite size and viewed metallographically under polarized light can be easily controlled by adjusting the deposition parameters such as deposition temperature and propane flow rate or silicon content. The density of isotopic pyrolytic carbons deposited from propane between 120$0^{\circ}C$ and 140$0^{\circ}C$ increases with increasing propane flow rate and decreasing deposition temperature from 1, 73g/cc to 2.08g/cc. The apparent crystallite size Lc parameter appears to depend only on deposition temperature being entirely independent of the propane flow rate. The carbon matrix density of the silicon-alloyed carbonds deposited from propane and methyltrichlorosil-ane from 2.05g/cc for a silicon content around 9wt% to 2.67g/cc for a silicon content of 36.7wt% The Lc parameter of the deposition temperature being entirely independent of the silicon content.