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ZrO<sub>2</sub>와 SiO<sub>2</sub> 절연막에 따른 Ru-Zr 금속 게이트 전극의 특성 비교
서현상,이정민,손기민,홍신남,이인규,송용승,Seo, Hyun-Sang,Lee, Jeong-Min,Son, Ki-Min,Hong, Shin-Nam,Lee, In-Gyu,Song, Yo-Seung 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.
경두개직류자극 전기장의 분포 특성에 비등방성 전기 전도율이 미치는 영향 분석 :3차원 고해상도 유한요소 두뇌 모델을 통한 연구
김상혁,서현상,조영선,이원희,김태성,Kim, Sang-Hyuk,Suh, Hyun-Sang,Cho, Young-Sun,Lee, Won-Hee,Kim, Tae-Seong 대한의용생체공학회 2011 의공학회지 Vol.32 No.4
For effective stimulation with tDCS, spatial focality of induced electrical field(EF) and current density(CD) is one of the important factors to be considered. Recently, there have been some studies to improve the spatial focality via different types of electrodes and their new configurations: some improvements using ring electrodes were reported over the conventional pad electrodes. However, most of these studies assumed isotropic conductivities in the head. In this work, we have investigated the effect of tissue anisotropy on the spatial focality of tDCS with the 4 + 1 ring electrode configuration via a 3-D high-resolution finite element(FE) head model with anisotropic conductivities in the skull and white matter. By examining the profiles of the induced EF from the head models with isotropic and anisotropic conductivities respectively, we found that the spatial focality of the induced EF significantly drops and get diffused due to tissue anisotropy. Our analysis suggests that it is critical to incorporate tissue anisotropy in the effective stimulation of the brain via tDCS.
강영섭,서현상,노영진,이충근,홍신남 한국항행학회 2003 韓國航行學會論文誌 Vol.7 No.2
본 논문에서는 오래 전부터 NMOS의 게이트 전극으로 사용된 폴리실리콘을 대체할 수 있는 Ta-Ti 합금의 특성에 대해 연구하였다. 실리콘 기판 위에 열적으로 성장된 SiO₂위에 Ta과 Ti의 두 타깃을 사용하여 co-sputterring 방법으로 Ta-Ti 합금을 증착하였다. 각각의 타킷의 100W 의 sputtering power 로 증착하여 시편을 제작하였다. 또한 비교 분석을 위하여 Ta를 100W의 sputtering power로 증착한 시편도 제작하였다. 제작된 Ta-Ti 합금 게이트의 열적/화학적 안정성을 검토하기 위하여 600℃에서 급속열처리를 수행한 결과 소자의 성능 저하는 나타나지 않았다. 또한 전기적 특성 분석 결과 Ta-Ti합금은 NMOS 에 적합한 일합수인 4.13eV를 산출해 낼수 있었고, 면저항 역시 폴리실리콘에 비해 낮은 값을 얻을 수 있었다. In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on SIO_2 by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at 600℃ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electircal analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.
박막 게이트 산화막에 대한 Ru-Zr 금속 게이트의 신뢰성에 관한 연구
이충근,서현상,홍신남 대한전기학회 2004 전기학회논문지C Vol.53 No.4(C)
In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and Zr. C-V and I-V characteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and 700℃ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.
열적으로 강인한 Molybdenium 게이트-PMOS Capacitor의 분석
이정민,서현상,홍신남,Lee, Jeong-Min,Seo, Hyun-Sang,Hong, Shin-Nam 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.7
In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.