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Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
박환배,D.H. Shim,가동하,H.D. Kang,김홍주,H.J. Hyun,Jik Lee,Jong-Moon Park,Kun-Sik Park,최영일,Y.I. Kim,Y.J. Kim,Y.K. Choi 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
Silicon sensors have been used in high energy physics, astrophysics, medical imaging, and many other fields, including industry, due to its good position resolution and its fast response. We have designed many types of silicon sensors on 6-inch masks, such as double-sided, single-sided, and diode sensors. We have researched and developed the double-sided silicon microstrip sensor for the first time in Korea. We understand the many characteristics of silicon microstrip sensors, such as the potential distribution, the electric field distribution, the leakage currents, and the capacitances, through process and device simulation programs. We optimized many fabrication process parameters and developed silicon microstrip sensors based on the simulation results. We compared the device simulation results with measurements of the electrical characteristics of the fabricated silicon microstrip sensors.
Radiation Damage Study of AC-Coupled Silicon Strip Sensors with a Proton Beam
현효정,박환배,가동하,H.D Kang,김홍주,Jinho Moon,Kyeryung Kim,유상수,이상훈,Sangpil Yun 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.I
We designed and fabricated AC-coupled silicon strip sensors that could be good detectors for X-ray imaging, particle detection, radiation monitoring, {\it etc.} Silicon sensors are known to have good position and energy resolution, but to be susceptible to radiation damage. Therefore, it is important to test the effects of radiation damage to the fabricated AC-coupled silicon strip sensors. For this purpose, the 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul, Korea, was used. Four AC-coupled silicon strip sensors were exposed to 10$^8\sim10^{11}$ proton fluences, and the total leakage current was measured and analyzed by comparing the results before and after the proton beam irradiation, and essential progress in the understanding of radiation-induced detector deterioration is presented.
김효준,김홍주,박환배,황용석,박정민,강국현,전혜빈 한국물리학회 2014 새물리 Vol.64 No.3
The luminesecence and the scintillation properties of CsI(Tl), Gd₃Al₂Ga₃O₁₂:Ce (GAGG) and Lu_{0.6}Y_{1.4}SiO_{0.5}:Ce (LYSO) single crystals were measured by using 1 × 1 cm² a Hamamatsu silicon photodiode under γ-ray excitation. In order to determine the emission wavelengths, we excited the crystals by using an X-ray source. The scintillation properties of the sample crystals were measured under γ-ray excitation. We measured the energy resolutions and the light yields of the sample crystals under γ-ray excitation from ^{137}Cs, ^{22}Na and ^{60}Co radioactive sources. We observed 10% difference in the energy resolutions and the light yields of CsI(Tl) and GAGG. In the case of LYSO, measuring the energy resolution and the light yield was difficult because the size of LYSO (1.5 × 0.3 × 0.3 cm³) was different from the sizes of CsI(TI) and GAGG (1 × 1 × 1 cm³) and because the quantum efficiency was very low when using a silicon photodiode for the emitted wavelength. 1 × 1 cm² 크기의 Hamamatsu 실리콘 광센서에 다양한 섬광결정을 결합하여 γ-선에 의한 섬광결정의 섬광특성을 측정하였다. 먼저 X-선 발생 장치를 이용하여 섬광결정의 발광파장 영역을 확인한 후, 실리콘 광센서에 섬광결정을 부착하여 γ-선에 대한 섬광결정의 섬광특성을 조사하였다. 무기섬광결정으로 CsI(Tl), Gd₃Al₂Ga₃O₁₂:Ce (GAGG) 와 Lu)_{0.6}Y_{1.4}SiO_{0.5}:Ce (LYSO) 를 사용하였고, ^{137}Cs, ^{22}Na, ^{60}Co의 γ-선에 대하여 상대적 섬광량 및 에너지 분해능에 대한 연구를 하였다. CsI(Tl)과 GAGG는 상대적 섬광량 및 에너지 분해능의 측정값이 10%정도의 차이를 보였다. LYSO의 경우 다른 두 섬광결정과 크기가 달랐으며 발광파장영역에 대한 실리콘 광센서의 양자효율이 낮아서 측정에 어려움이 있었다.
Measurement of Proton Beam Energy and Flux by Using a LYSO Crystal
강상준,김홍주,박환배,Heedong Kang,J. H. So,Kyeryung Kim,Sihhong Doh,Sungwhan Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.3
We investigated the beam profiles of the 45-MeV proton beam from the MC-50 cyclotron at Korea Institute of Radiological and Medical Science. We used a 45-MeV proton beam of 0.2-nA beam current to measure the beam energy and flux. The 45-MeV proton beam passed through a 0.2-cm thick aluminum window capping the beam pipe and then was collimated to a 1-mm-diameter beam spot by using a 1-mm aluminum collimator. We examined the dependence of the energy profile of the proton beam on the transverse distance from the beam center by using the LYSO crystal scintillator. Also, the flux of the proton beam was measured with the LYSO crystal scintillator. Accurate information on the energy profile of the beam is important not only for understanding the characteristic of the beam but also for understanding the light output response of a scintillation crystal. From our investigation, the energy profiles of the beam at the near point from the center and some distance points from the center were found to be very different. Thus, it is very important to test the energy profile of the beam at the point where the detector will be located before one performs the beam test for a detector, such as a silicon sensor.
Measurements of a Silicon Sensor's Specifications
전혜빈,강국현,박환배 한국물리학회 2017 새물리 Vol.67 No.3
Various types of silicon sensors have been used to measure the energies and the tracks of passing particles in high-energy physics, nuclear physics, and astrophysics experiments. Depending on the experimental purposes and goals, silicon substrates with different resistivities, doping types, doping concentrations and thicknesses are chosen for the manufacture of the sensors. Because the properties of the substrate and the fabrication process determine the sensor's performance, verifing whether the fabricated sensors satisfy the specifications required to achieve the physics goals targeted in the experiments is important. In this paper, we present measurements of the bulk capacitance as functions of the frequency and the reverse bias voltage, along with the full depletion voltages, doping concentrations and resistivity values of fabricated sensors. We then compare them to the specifications for the silicon substrate and the run sheet for the fabrications.
Signal-to-Noise Ratio Measurement for Silicon Strip Sensors with a Proton Beam
유상수,가동하,박환배,현효정,H.D Kang,김홍주,J.B Bae,Kyeryung Kim,Y.I Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.I
The signal-to-noise performance of DC-coupled single-sided silicon strip detectors (SSSD) of our own design and front-end readout electronics is presented. Good separation of the signal from the noise is essential for the successful accomplishment of their intended functions. For the tracking of charged particles, a good signal-to-noise ratio ($>$$10$) is required. For X-ray applications, much better signal-to-noise performance is desirable because of less energy being deposited by an incident photon. We report a signal-to-noise ratio of the fabricated DC-coupled SSSD with electronics for the 45-MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul, Korea