70V Bicmos 소자의 공정개발에 관한 연구 ( A Study on the 70V Bicmos Process and Device Technology )

박치선,차승익,최연익,정원영 대한전자공학회 1991 대한전자공학회 학술대회 Vol.1991 No.7

아날로그/디지탈 회로 구성에 쓰이는 BCDMOS소자의 제작에 관한 연구

박치선,Park, Chi-Sun 대한전자공학회 1989 전자공학회논문지 Vol. No.

본 논문에서는 아날로그/디지탈 회로 구성시 입출력부는 바이폴라 소자로 내부의 논리회로 부분은 CMOS 소자로 높은 내압을 요구하는 부분에는 DMOS 소자를 이용할 수 있는, BCDMOS 공정 기술개발을 하고자 하였다. BCDMOS 제작 공정은 폴리게이트 p-well CMOS 공정을 기본으로 하였고, 소자설계의 기본개념은 공정흐름을 복잡하지 않게 하면서 바이폴라, CMOS, DMOS 소자 각각의 특성을 좋게하는데 두었다. 실험결과로서 바이폴라 npn 트랜지스터의 $h_{FE}$ 특성은 320(Ib-$10{\mu}A$)정도이며, CMOS 소자에서는 n-채자에서는 항복전압이 115V이상의 특성을 얻을 수 있었다. In this paper, Analog/Digital BCDMOS technology that the bipolar devices for driver applications CMOS devices for logic applications, and DMOS devices for high voltage applications is pressented. An optimized poly-gate p-well CMOS process is chosen to fabricate the BCDMOS, and the basic concepts to desigh these devices are to improve the characteristics of bipolar, CMOS & DMOS with simple process technology. As the results, $h_{FE}$ value is 320 (Ib-$10{\mu}A$ for bipolar npn transistor, and there is no short channel effects for CMOS devices which have Leff to $1.25{\mu}m$ and $1.35{\mu}m$ for n-channel and p-channel, respectively. Finally, breakdown voltage is obtained higher than 115V for DMOS device.

개암나무 근맹아(根萌芽)가 생장 및 결실에 미치는 영향

박치선,정석구 한국임학회 1985 한국산림과학회지 Vol.70 No.1

개암나무는 根元部에서 發生되는 萌芽로 인하여 生育과 結實에 크게 影響을 주고 있으므로 이들 根萌芽의 效果的인 抑制方法을 究明코저 5月中旬부터 7月中旬에 걸쳐 時期別로 2.4-D를 Corylus heterophylla와 Corylus avellana 8年生 根萌芽에 濃度別 500, 1,000, 1,500, 倍液을 撤布하여 處理別 生育 및 結實狀況을 調査한 바, 2.4-D 500 倍液을 5月中旬에 撤布한 區가 他處理區에 비하여 生長과 收穫量이 增大되었다.

A Study on the 80V BICMOS Device Fabrication Technology

박치선,차승익,최연익,정원영,박용,Park, Chi-Sun,Cha, Seung-Ik,Choi, Yearn-Ik,Jung, Won-Young,Park, Yong The Institute of Electronics and Information Engin 1991 전자공학회논문지-A Vol.28 No.10

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

BICMOS게이트 어레이 구성에 쓰이는 소자의 제작 및 특성에 관한 연구

박치선 한국통신학회 1989 韓國通信學會論文誌 Vol.14 No.3

본 논문에서는 BICMOS 게이트 어레이 시스템 구성시 내부의 논리회로 부분은 CMOS 소자로 입출력부는 바이폴라 소자를 이용할 수 있는 공정과 소자 개발을 하고자 하였다. BICMOS게이트 어레이 공정은 폴리게이트 p-well CMOS 공정을 기본으로 하였고, 소자설계의 기본개념은 공정흐름을 복잡하지 않게 하면서 바이폴라, CMOS 소자 각각의 특성을 좋게 하는데 두었다. 시험결과로서, npn1 트랜지스터의 hFE 특성은 120(Ic=1mA) 정도이고, CMOS 소자에서는 n-채널과 p-채널이 각각 1.25um, 1.35um 까지는 short channel effect 현상이 나타나지 않았고, 41stage ring oscillator의 게이트당 delay 시간은 0.8ns이었다. In this paper, BICMOS gate array technology that has CMOS devices for logic applications and bipolar devices for driver applications is presented. An optimized poly gate p-well CMOS process is chosen to fabricate the BICMOS gate array system and the basic concepts to design these devices are to improve the characteristics of bipolar & CMOS device with simple process technology. As the results hFE value is 120(Ic=1mA) for transistor, and there is no short channel effects for CMOS devices which have Leff to 1.25um and 1.35um for n-channel, respectively, 0.8nx gate delay time of 41 stage ring oscillators is obtained.

$SrTiO_3/RuO_2$ 박막 형성시 플라즈마 가스 주입비의 영향

박치선,김상훈,마재평 한국결정성장학회 1998 한국결정성장학회지 Vol.8 No.2

$RuO_2$를 하부 전극으로 적용하여 스퍼터링 가스의 주입비($Ar/O_2$ratio) 변화에 따른 $SrTiO_3$ 박막의 물성을 고찰하였다. 플라스마 가스내 $Ar/O_2$비 변화가 결정성, 표면 morphology등의 $SrTiO_3$ 박막의 미세구조에 큰 영향을 미치는 것을 확인할 수 있었다. 플라스마 가스내의 산소량이 증가함에 따라 박막의 표면 morpholgy 및 상형성의 향상을 통하여 $SrTiO_3$박막의 전기적 특성을 개선할 수 있음을 관찰하였다. 산소의 양이 증가할수록 ST 박막의 누설전류는 $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$에서 $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$로 감소하였고, 유전 상수값은 $70(Ar/O_2=10/0)$에서 $190(Ar/O_2=5/5)$으로 증가하였다. $SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

Cl2/O2 Gas Reaction mixtures Plasma Kinetics Modeling

박치선,김인기 한국마이크로전자및패키징학회 2009 마이크로전자 및 패키징학회지 Vol.16 No.4

A study on both etching characteristics and mechanism of Cl2/O2 gas were investigated. We obtained that the change of O2/(Cl2+O2) mixing ratio from 0 to 0.2 leads to the increase of electron average energy, electron drift rate and Electron Energy Distribution Function deformation due to a “transparency” effect and rate coefficients of electron impact processes also depend on a mixture content. The comparison of rate coefficients and rates of elementary processes have shown that the main mechanisms of Cl and O atoms formation are the direct electron impact dissociation of corresponding molecules while the contribution of all possible “secondary” processes is not significant in the case of a relatively low O2 addition. The main mechanisms of Cl and O atom formation are the direct electron impact dissociation of corresponding molecules while the contribution of all possible “secondary” processes is not significant in the case of a relatively low O2 addition. A study on both etching characteristics and mechanism of Cl2/O2 gas were investigated. We obtained that the change of O2/(Cl2+O2) mixing ratio from 0 to 0.2 leads to the increase of electron average energy, electron drift rate and Electron Energy Distribution Function deformation due to a “transparency” effect and rate coefficients of electron impact processes also depend on a mixture content. The comparison of rate coefficients and rates of elementary processes have shown that the main mechanisms of Cl and O atoms formation are the direct electron impact dissociation of corresponding molecules while the contribution of all possible “secondary” processes is not significant in the case of a relatively low O2 addition. The main mechanisms of Cl and O atom formation are the direct electron impact dissociation of corresponding molecules while the contribution of all possible “secondary” processes is not significant in the case of a relatively low O2 addition.

Inositol이 白鼠唾液腺의 phosphatase 및 esterase에 미치는 影響에 關한 組織化學的硏究

朴致善 최신의학사 1968 最新醫學 Vol.11 No.6

Histochemcal observations were undertaken in respect to the influence of the administration of inositol upon the salivary glands in the normal male rats. The three major salivary glands were removed after 1, 2, 3, 4, 5,7 10 and 14 days of continuous administration (4mg of inositol was injected daily), respectively. The histochemicaI reactions for alkaline phosphatase, acid phosphatase and esterase were emploied to the paraffin sections by Coupling azo-dye method. The results were summarized as follows: 1) Alkaline phosphatase reaction tended to increase at the basal parts of the submandibular acini, the secretory and excretory ducts of each salivary glands. 2) In the acid phosphatase reactons, there was no difference between control group and inositol-administrated groups. 3) Esterase reaction also increased in the acinar cells and duct cells of the three major salivary glands.

70V Bicmos 소자의 공정개발에 관한 연구

박치선(Chi-sun Park),차승익(Seung-Ik Cha),최연익(Yearn-Ik Choi),정원영(Won-Young Jung) 대한전자공학회 1991 대한전자공학회 학술대회 Vol.1991 No.6

표면에칭효과에 의한 산화알루미늄 유전체의 정전용량 특성

오한준,박치선,Oh Han-Jun,Park Chi-Sun 한국마이크로전자및패키징학회 2004 마이크로전자 및 패키징학회지 Vol.11 No.4

알루미늄 유전체의 표면적 증가에 의한 정전용량 값을 증가시키기 위하여, 1 M의 염산 에칭용액에 첨가제를 사용했을 때 나타나는 알루미늄 표면의 에칭특성의 변화를 조사하였다. 에칭액으로서 염산을 사용한 경우 알루미늄 표면에서 생성되는 에치피트의 형상과 단위 면적당 생성밀도가 균일하지 못하였다. 염산용액에 에틸렌글리콜이 첨가된 혼합용액에서 에칭을 실시했을 경우, 알루미늄 기지 표면에 미세하고 균일한 에치피트가 형성되어 표면적 증가의 효과가 크게 나타났다. 에틸렌글리콜이 첨가된 에칭액에서 제조된 유전체는 표면적 증가에 의한 효과로 높은 정전용량 값을 나타냈다. The structural, electrical properties of the electrolytic capacitors were examined. By the addition of additives to hydrochloric acid solution increased the dielectric aluminum surface layer. For etch tunnels formed in hydrochloric acid, the away and density of the tunnels was not uniform, while for those formed in hydrochloric acid with additives the distribution presented relative uniformity. When the etched surface formed in hydrochloric acid with $5\%$ ethylene glycol, the enlargement of specific surface area was more effective.