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TIPS-pentacene:ph-BTBT-10 혼합 유기반도체가 유기전계효과트랜지스터 광반응 특성에 미치는 영향
박채민,이은광 한국청정기술학회 2024 청정기술 Vol.30 No.1
본 연구에서는 6,13-Bis(triisopropylsilylethynyl)pentacene(TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (BT):Poly styrene (PS) 블랜딩 thin film transistor (TFT)를 제작 광 흡수 센서로의 활용에 대해 탐구한다. BT의 혼합으로 인해 off current 감소와 on/off ratio 향상을 동시에 달성하였다. 특히, TP:BT:PS (1:0.25:1 w/w) 샘플은 우수한 광 흡수 특성을 보여주었고, 이를 통해 높은 성능의 광 흡수 장치 제작이 가능함을 입증했다. 다양한 혼합 비율의 결정 구조와 전기적 특성에 대한 분석을 통해 TP:BT:PS (1:0.25:1 w/w) 샘플이 최적임을 확인하였다. 이 결과는 광 흡수 장치의발전 뿐만 아니라 혼합 organic semiconductor (OSC)의 광전자 시스템 개발에 긍정적인 기대효과를 미칠 수 있을 것이며, 이를 통해 단일 OSC 사용의 제약을 극복하고, 미세 조정된 광학 응답을 갖춘 고성능 OSC TFT를 제작하여 의료 전자소자, 산업용 전자소자 등에 응용할 수 있을 것으로 기대된다. In this study, blended 6,13-Bis(triisopropylsilylethynyl)pentacene (TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1] benzothiophene (BT):Poly styrene (PS) TFT at different ratios were explored for their potential application as light absorption sensors. Due to the mixing of BT, both off current reduction and on/off ratio improvement were achieved at the same time. In particular, the TP:BT:PS (1:0.25:1 w/w) sample showed excellent light absorption characteristics, which proved that it is possible to manufacture a high-performance light absorption device. Through analysis of the crystal structure and electrical properties of the various mixing ratios, it was confirmed that the TP:BT:PS (1:0.25:1 w/w) sample was optimal. The results of this study outline the expected effects of this innovation not only for the development of light absorption devices but also for the development of mixed organic semiconductor (OSC) optoelectronic systems. Through this study, the potential to create a multipurpose platform that overcomes the limitations of using a single OSC and the potential to fabricate a high-performance OSC TFT with a fine-tuned optical response were confirmed.
박채민 ( Chae Min Park ),이의형 ( Ui Hyoung Lee ),이효종 ( Hyo Jong Lee ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.6
Copper was electroplated using plating baths containing various concentrations of Janus Green B (JGB, C30H31ClN6) from 0 to 1 mM. The electrical resistance, microstructure and impurity concentration were investigated by using four point probe, electron backscattered diffraction, and glow discharge spectroscopy analyses, respectively. The initial sheet resistance of the Cu films was increased by increasing the JGB concentration, and the impurity concentrations of C, H and N also linearly increased. At 0.2 mM of JGB, while the sheet resistance decreased by 7% for the initial resistance, crystal growth did not occur. The initial decrease in electrical resistance was due to the redistribution of impurities, and grain boundary migration was inhibited by solute dragging. As a result, we were able to retard the recrystallization of Cu electrodeposits using the impurities from the JGB additive. (Received April 4, 2016)