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Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
문대용,Woong-Sung Kim,김태섭,강병우,염승진,김재홍,박종완 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.3
Copper is an alternative material to aluminum that has been used as an interconnection material in metallization for large-scale integrated circuits because of its favorable electrical conductivity (1.67μΩ-cm) and superior resistance to electro-migration. Cu metallization by ECD (electro- chemical deposition) requires a seed layer of Cu, which should have a continuous and smooth film surface, in order to achieve Cu super-filling. High-quality Cu thin films were deposited on TiN/Si substrates by using a radio-frequency plasma-enhanced atomic layer deposition (RF-PEALD) tech- nique and a hexafluoroacetylacetonate copper vinyltrimethoxysilane [(hfac)Cu(VTMOS)] precursor. The variation in the film's growth mode with the substrate temperature was investigated at tem- peratures between 150-350℃. As the vertical growth rate increase at the temperatures above 200℃, forming a continuous thin film is difficult and the resistivity increases due to voids between grains and due to surface scattering. Copper is an alternative material to aluminum that has been used as an interconnection material in metallization for large-scale integrated circuits because of its favorable electrical conductivity (1.67μΩ-cm) and superior resistance to electro-migration. Cu metallization by ECD (electro- chemical deposition) requires a seed layer of Cu, which should have a continuous and smooth film surface, in order to achieve Cu super-filling. High-quality Cu thin films were deposited on TiN/Si substrates by using a radio-frequency plasma-enhanced atomic layer deposition (RF-PEALD) tech- nique and a hexafluoroacetylacetonate copper vinyltrimethoxysilane [(hfac)Cu(VTMOS)] precursor. The variation in the film's growth mode with the substrate temperature was investigated at tem- peratures between 150-350℃. As the vertical growth rate increase at the temperatures above 200℃, forming a continuous thin film is difficult and the resistivity increases due to voids between grains and due to surface scattering.