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Characteristics of Zn1 -xMnxO Thin Films Prepared by RF Magnetron Sputtering
두수 김,김득영,Hwa-Mok Kim,이세준,Shavkat U. Yuldashev,Tae Won Kang 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We demonstrate the characteristics of Zn$_{1-{x}}$Mn$_{x}$O thin films grown on (0001) Al$_2$O$_3$ substrates using an RF magnetron sputtering system. By increasing the Mn content, the films exhibited increases in both the {\it c}-axis lattice constant and fundamental bandgap energy. From the results of atomic force microscopy study, we confirmed that the morphology of Zn$_{1-x}$Mn$_{x}$O was sensitively affected by changing substrate temperature. The curie temperature obtained from temperature-dependent magnetization curves was 70 K for the film with $x$ = 0.07, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn$_{0.93}$Mn$_{0.07}$O at 5 K were 1.2 emu/g and 500 Oe, respectively.