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펄스 레이저를 이용한 절연물 위 실리콘 박막의 결정화에 관한 투과전자현미경 연구
남기수,김진혁,이정용,성건용 대한금속재료학회(대한금속학회) 1994 대한금속·재료학회지 Vol.32 No.7
A transmission electron microscopy study of the pulsed laser beam crystallized silicon thin film, deposited on SiO₂ at 520℃ by low pressure chemical vapor deposition, has been carried out. It has been shown that the amorphous silicon thin film irradiated by a pulsed laser beam was crystallized by an explosive crystallization process. The resulting polycrystalline matrix contained crystals which had either a diamond cubic or a hexagonal crystal structure. In the interior of the grains which have a hexagonal crystal structure, dislocations, extrinsic type stacking faults, and intrinsic type stacking faults were observed, but the defect density was apparently decreased compared with that in the grains crystallized by a soild phase crystallization. It is thought that the hexagonal crystal structure and many defects were formed by high temperature gradients at the liquid/solid interfaces and the growth breakdown.
저압화학증착된 혼합상 실리콘 박막의 형성기구에 관한 투과전자현미경 연구
남기수,김진혁,이정용,이승창 대한금속재료학회(대한금속학회) 1995 대한금속·재료학회지 Vol.33 No.6
Transmission electron microscopy study on the formation mechanism of the as-deposited mixed-phase silicon thin films, deposited on SiO₂ at temperature range 570℃-580℃ by low pressure chemical vapor deposition and annealed at 570℃, has been carried out. Though most part of as-deposited films had an amorphous phase, some crystallites which had a random shape were observed at Si/SiO₂ interfaces. The higher the deposition temperature was, the larger the size of the crystallites was. No remarkable growth of preexisting crystallites was observed in the film deposited at 570℃ for 28 min. and annealed at 570℃ for 1 h. Crystallites which had an elongated elliptical shape were observed in the film annealed at 570℃ for 3 h. The size of the elliptical shaped grains was larger than that of the crystallites grown from preexisting crystallites. From above results, it is concluded that as-deposited mixed-phase silicon films are formed not because films, deposited as an amorphous phase, are crystallized during the deposition process but because films are deposited as a crystalline phase at the initial stage of the deposition process and then deposited as an amorphous phase.