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혼합소스 HVPE에 의해 성장된 In(Al)GaN 층의 특성
황선령,김경화,장근숙,전헌수,최원진,장지호,김홍승,양민,안형수,배종성,김석환,Hwang, S.L.,Kim, K.H.,Jang, K.S.,Jeon, H.S.,Choi, W.J.,Chang, J.H.,Kim, H.S.,Yang, M.,Ahn, H.S.,Bae, J.S.,Kim, S.W. 한국결정성장학회 2006 한국결정성장학회지 Vol.16 No.4
혼합소스 HVPE(hydride vapor phase epitaxy) 방법을 이용하여 InGaN 층을 GaN 층이 성장된 사파이어 (0001) 기판 위에 성장하였다. InGaN 층을 성장하기 위해 금속 In에 Ga을 혼합하여 III족 소스로 이용하였으며 V족 소스로는 $NH_3$를 이용하였다. InGaN층은 금속 In에 Ga을 혼합한 소스와 HCl을 흘려 반응한 In-Ga 염화물이 다시 $NH_3$와 반응하도록 하여 성장하였다. XPS 측정을 통해 혼합소스 HVPE 방법으로 성장한 층이 InGaN 층임을 확인할 수 있었다. 선택 성장된 InGaN 층의 In 조성비는 PL과 CL을 통해서 분석하였다. 그 결과 In 조성비는 약 3%로 평가되었다. 또한, 4원 화합물인 InAlGaN 층을 성장하기 위해 In 금속에 Ga과 Al을 혼합하여 III족 소스로 사용하였다. 본 논문에서는 혼합소스 HVPE 방법에 의해 III족 소스물질로 금속 In에 Ga(Al)을 혼합한 소스를 이용하여 In(Al)GaN층을 성장할 수 있음을 확인할 수 있었다. InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.
게이트 절연체의 두께에 대한 IGZO TFT의 전기적 특성
성효성(H.S Seong),김우성(W.S Kim),김홍승(H.S Kim),윤영(Young Yun),장낙원(N.W Jang) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.10
We simulate indium-gallium-zinc-oxide thin-film-transistors (IGZO TFTs). The effects of the interface between the Gate insulate and IGZO channel on the electrical properties of a-IGZO TFTs were simulated. IGZO TFTs was simulated by using the well-known physical model based on the exponential density of deep and tail states. Two kinds of Gate insulates were analyzed, which were aluminum oxide and silicon nitride. Simulation results were shown the thicker gate oxide makes the gate oxide capacitance smaller and implies higher threshold voltage and lower subthreshold swing.
Effect of Interface on the Optical Properties of GaN Grown by HVPE
S. N. YI,H. KIM,김홍승,안형수,장지호,J. Y. YI,김경화,M. YANG,이상칠,김석환 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
We studied the basic scientic problems of the in uence of growth interruption time. Interruption time occurs unavoidably while we grow hetero-interface structures for semiconductor devices or apply a specic fabrication method. In this paper, GaN epilayer was grown with growth interruption time varying from 30 seconds to 10 minutes by hydride vapor phase epitaxy (HVPE). The grown GaN samples were investigated by analyzing the photoluminescence (PL) characteristics. We found that the impurity-related peak intensity increased monotonically with the increase of the growth interruption time.
Effect of a Buffer Layer on Microstructural Evolution in ZnO/Si Heterostructures
J. H. Kim,이호성,B. H. Kong,E. S. Jung,조형균,김홍승,J. Y. Moon,김태환 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
We have deposited ZnO thin films on Si(111) substrates with and without a low temperature-grown ZnO buffer layer by using radio-frequency (rf) magnetron sputtering. The microstructural properties of ZnO/Si heterostructures have been investigated by using X-ray diffraction (XRD), pole-figures and transmission electron microscopy (TEM) measurements. The results of XRD, pole figures and TEM showed that both ZnO thin films with and without an embedded buffer layer had highly c-axis preferred orientations. When low-temperature-grown ZnO was used as an embedded buffer layer, the crystal quality of the ZnO thin films was improved due to the reduced rotation of the c-axis, despite its smaller grain size.