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김의송,이종무,이종길,Kim, Eui-Song,Lee, Chong-Mu,Lee, Jong-Gil 한국재료학회 1992 한국재료학회지 Vol.2 No.6
반응성 스팟터법에 의하여 형성된 TiN막 표면상에 CVD 텅스텐막을 증착할 때 여러가지 전처리 실시에 따른 텅스덴의 핵 생성 양상의 변화를 비교 조사하였다. 먼저 Ar rf 스팟터에칭 전처리는 에칭 두께가 200A 이상일 때에는 잠복기와 증착속도를 증가시킨다. Ar 이온주입 전처리는 잠복기를 증가시켜 텅스텐의 핵 생성에는 불리한 효과를 나타내는 반면, 증착속도는 증가시킨다. 또한 Si$H_4$flushing 전처리는 TiN막 표면에서의 Si의 흡착을 용이하게 함으로써 잠복기를 약간 감소시키는 효과를 나타낸다. Effects of various pretreatments on the nucleation of CVD-W deposited on the reactively sputter-deposited TiN was investigated. Incubation period of nucleation and deposition rate decreased by the pretreatment of Ar rf-sputter etching for the depth below 300k, but they increased for the etchig depth over 200A. The preteatment of Ar ion implantation decreased the incubation period of nucleation, but increased deposition rate. Also Si$H_4$flushing pretreatment decreased the incubation period of nucleation slightly due to the absorption of Si by TiN surface.
김의송,이종무,이종길,Kim, Eui-Song,Lee, Chong-Mu,Lee, Jong-Gil 한국재료학회 1992 한국재료학회지 Vol.2 No.2
형성방법이 다른 세종류의 TiN기판상에 CVD텅스텐막을 도포할 때의 W의 핵생성 양상을 비교조사하여 다음과 같은 결과를 얻었다. 반응성 스팟터법에 의하여 형성한 TiN과 $NH_3$분위기에서 RTP처리한 $SiH_4$환원에 의하여 CVD-W막을 증착할 때, 증착속도(deposition rate)는 sputtered TiN>RTP TiN>annealed TiN의 순서로 감소하며, W 핵생성에 대한 잠복기는 sputtered $TiN{\leq}RTP$ TiN<annealed TiN의 순서로 증가하는 경향을 나타낸다. Annealed TiN의 경우에는 열처리공정중 질소분위기내에 불순물로 존재하던 산소가 TiN막내로 들어가 TiN막의 조성이 TiO_{X}N_{Y}$로 바뀌기 때운에 그 위에서 W의 핵성성이 어려워지고, 증착속도도 낮아진 것이다. RTP-TiN의 미세한 결정립구조는 W의 핵성성과 성장에 유리한 효과를 미치지만, 그것의 높은 압축응력이 W의 핵생성과 성장에 미치는 불리한 효과가 더 크기 때문에, RTP-TiN 기판상에 W를 증착할 경우가 sputtered TiN 기판상에 W를 증착할 경우보다 증착속도가 더 낮고, 잠복기도 더 긴 것으로 사료된다. When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.
Realization of Human Interactive Control for Fish Aquarium Robotic
Eui Song Kim(김의송),Chan Bok Kim(김찬복),Teressa T(테레사),Amarnathvarma Angani(아마르나스와르마 앙가니),Kyoo Jae Shin(신규재) 대한전자공학회 2019 대한전자공학회 학술대회 Vol.2019 No.6
The proposed study is the continuation of the previous study that aims to control the robotic fish which had researched on bio-mimetic ornamental aquarium robotic. Recently, our research held on human interactive control based on hand gesture recognition. From the real time video, users are able to control the motion of the robotic fish by using two hands where the left hand deciding which fish will be controlled and the right hand deciding which motion of the robotic fish will be controlled. In the other case, user utilized one hand, which decides to select the tracking control algorithms such as color mark, stop zone and lead-lag tracking control algorithms. Hand gesture recognition consists of hand segmentation, and gesture recognition from the hand features. Our result shows that an interactive human control, which is in this study, is hand gesture, successfully control the motion of the robotic fish in an interactive manner.
SiH4 환원에 의한 선택성 CVD-W 막 특성에 대한 WF6 가스유속의 효과
이종무,김의송,임영진 대한금속재료학회(대한금속학회) 1991 대한금속·재료학회지 Vol.29 No.9
Effects of WF_6 gas flow rate on the propeerties of selective CVD-W by SiH₄ reduction have been investigated. SEM microstructure for W film changes from a leaf-shaped large grain, via a starshaped small grain and a small oval grain to a fine grain with decreasing WF_6 flow rate. The thickness of WSi_x transition layer increases with increasing for SiH₄/WF_6=R$lt;0.9, but it decreases rapidly for with increases 0.9 $lt; R $lt; 1.1 These changes seem to be related to the phase transition from α-W to β-W. In addition deposition rate tends to decrease, and resistivity also tends to decrease with increasing WF_6 flow rate. The largest decrease in deposition rate and resistivity occurs for the WF_6 flow rate in the range of 9-11 sccm.