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김동엽,김우진,김중현,홍석호,최선심 한국분자세포생물학회 2019 Molecules and cells Vol.42 No.4
Various genetic and environmental factors are known to be associated with chronic obstructive pulmonary disease (COPD). We identified COPD-related differentially expressed genes (DEGs) using 189 samples accompanying either adenocarcinoma (AC) or squamous cell carcinoma (SC), comprising 91 normal and 98 COPD samples. DEGs were obtained from the intersection of two DEG sets separately identified for AC and SC to exclude the influence of different cancer backgrounds co-occurring with COPD. We also measured patient samples named group ‘I’, which were unable to be determined as normal or COPD based on alterations in gene expression. The Gene Ontology (GO) analysis revealed significant alterations in the expression of genes categorized with the ‘cell adhesion’, ‘inflammatory response’, and ‘mitochondrial functions’, i.e., well-known functions related to COPD, in samples from patients with COPD. Multi-omics data were subsequently integrated to decipher the upstream regulatory changes linked to the gene expression alterations in COPD. COPD-associated expression quantitative trait loci (eQTLs) were located at the upstream regulatory regions of 96 DEGs. Additionally, 45 previously identified COPD-related miRNAs were predicted to target 66 of the DEGs. The eQTLs and miRNAs might affect the expression of ‘respiratory electron transport chain’ genes and ‘cell proliferation’ genes, respectively, while both eQTLs and miRNAs might affect the expression of ‘apoptosis’ genes. We think that our present study will contribute to our understanding of the molecular etiology of COPD accompanying lung cancer.
GBN/SSN 억제를 위한 이종 셀 EBG 구조를 갖는 전원면
김동엽,주성호,이해영,Kim, Dong-Yeop,Joo, Sung-Ho,Lee, Hai-Young 한국전자파학회 2007 한국전자파학회논문지 Vol.18 No.2
본 논문에서는 넓은 영역에서 GBN/SSN 억제 특성을 보이는 이종 셀 EBG 구조를 이용한 새로운 전원면 구조를 제안하였다. 제안된 구조는 -30 dB 이하의 삽입 손실로 정의되는 저지 대역이 GBN의 에너지가 집중적으로 분포하는 수 백 MHz에서 시작하며 약 7.9 GHz의 넓은 대역폭을 갖는다. 본 구조의 특징은 인덕턴스를 강화하는 나선형 연결 선로와 분산적 LC 회로의 주기를 줄이는 이종 셀을 추가한 것이다. 그 결과 -30 dB 저지 대역의 저주파에서의 차단 주파수가 낮아짐은 물론 대역폭이 넓어진 특성을 보였다. 또한, 전원면과 접지면 사이의 구조적 공진 모드가 현격히 억제되었으며 평행판 도파관에 비해 낮은 EMI 특성을 보였다. In this paper, a novel power/ground plane using the hybrid-cell electromagnetic band-gap(EBG) structure is proposed for the wide-band suppression of the ground bound noise(GBN) or simultaneous switching noise(SSN). The -30 dB stopband of the proposed structure starts from a few hundred MHz where the GBN/SSN energy is dominant. The distinctive features of this new structure are the thin spiral strip line and hybrid-cells. They realize the enhanced inductance and the shorter period of the EBG lattice. As a result, the lower cut-off frequency and bandwidth of the -30 dB stopband becomes lower and wider, respectively. In addition, the proposed structure has smaller number of resonance modes between power/ground planes and performs a low EMI behavior compared with the reference board.
고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석
김동엽,홍순구,정태훈,이상헌,백종협,Kim, Dong-Yeob,Hong, Soon-Ku,Chung, Tae-Hoon,Lee, Sang Hern,Baek, Jong Hyeob 한국재료학회 2015 한국재료학회지 Vol.25 No.1
This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.