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고전압 응용을 위한 4H-SiC Schottky Barrier Diode의 제작 및 특성
금병훈,강수창,박종대,신무환 명지대학교 대학원 1998 대학원논문집 Vol.2 No.-
This paper discusses about the processing and characterization of the high breakdown voltage 4H-SiC Schottky Barrier Diode. Two types of the devices were fabricated one was fabricated using the passivation layer and the other was fabricated without the passivation. In case of the device with passivation layer, breakdown voltages were in the range 120 V to 300 V, which is quite higher compare to the devices fabaricated from Si or GaAs. However, this value is lower than the theoretically predicted value. The reverse leakage current of the devices was quite low which is less than 10^7 Amp at the reverse bias voltage of 220 V.
고온동작을 위한 SiC MESFET(MEtal-Semiconductor Field Effect Transistor)에서 Schottky 장벽을 통한 전류 전송
김인회,금병훈,강수창,신무환 명지대학교 대학원 1997 대학원논문집 Vol.1 No.-
In this study, an analytical examination of the reverse gate leakage current in a SiC MESFET(MEtal-Semiconductor Field Effect Transistor) is presented. The thoeretical prediction of the contact characteristics has been made using the two-dimensional device/circuit simulator PISCESⅡ. A significant gate leakage current higher than 200㎃/㎜ at 623 K is predicted when molybdenum(Φ_m = 4.53 V) is used as gate electrode metal. Our results suggest that platinum(Φ_m = 5.70 V) is appropriate for the gate electrode for the high temperature operation of the device. As the DC Performance is improved, the large-signal RF perfromance of SiC MESFET utilizing the platinum gate is expected to be superior to that of the Mo-gated device.