Ag계 도체 및 RuO₂계 저항체 페이스트의 특성에 미치는 무연계 글라스 프릿트 조성의 영향

구본급,Koo, Bon-Keup 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향

구본급,Koo, Bon Keup 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.4

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

AlN 기판의 표면조도 및 소결온도가 Ag 후막도체의 접착강도에 미치는 영향

구본급 한국결정성장학회 2020 한국결정성장학회지 Vol.30 No.3

The effect of substrate surface roughness and sintering temperature on the adhesion strength of Ag-based thick film conductors formed on AlN substrates with excellent thermal conductivity was studied. The adhesion strength of the thick-film conductor manufactured using an AlN substrate having a surface roughness (Ra) of 0.5 was higher than that of a thick-film conductor manufactured using a substrate having a surface roughness greater or smaller than this. In the case of a substrate with a surface roughness of less than 0.5, the contact area between the Ag thick film conductor and the substrate was relatively smaller than that of a substrate with a surface roughness of 0.5, resulting in a lower adhesive strength. On the other hand, when a substrate having a surface roughness of more than 0.5 was used, it was found that the conduct or film was not completely adhered to the substrate, and as a result, it was found that the adhesive strength was small. In addition, it was found that the surface smoothness of the Ag-based thick film conductor film obtained by sintering at 850°C was the best compared to the smoothness of the conductor film obtained by sintering at different sintering temperatures,and as a result, it was found that the adhesive strength of the conductor film was the highest. 열전도성이 우수한 AlN 기판에 형성되는 Ag계 후막도체의 접착강도에 미치는 기판 표면조도 및 소결 온도의영향을 연구하였다. 표면조도(Ra)가 0.5인 AlN 기판을 사용하여 제조한 후막도체의 접착강도가 이보다 표면조도가 크거나또는 작은 기판을 사용하여 제조한 후막도체의 경우보다 높게 나타났다. 표면조도가 0.5보다 작은 기판의 경우 Ag 후막도체와 기판 사이의 접촉면적이 표면조도가 0.5인 기판보다 상대적으로 작아 접착강도가 작게 나타났다. 한편, 표면조도가0.5보다 큰 기판을 사용한 경우에는 도체막이 기판에 완전히 접착되지 못하는 현상이 나타났고, 이로 인해서 접착강도가적게 나타남을 알 수 있었다. 또한, 850°C에서 소결하여 얻어진 Ag계 후막도체 막의 표면 평활도가 다른 소결 온도에서소결하여 얻어진 도체막의 평활도에 비해 가장 우수하였고, 이로 인해 도체막의 접착강도가 가장 높게 나타남을 알 수 있었다.

경량기포콘크리트(ALC)의 기공형상변화에 미치는 암면의 영향

구본급,손대성 한밭대학교 산업과학기술연구소 1994 논문집 Vol.2 No.-

As the purpose of making of ceiling materials, the effect of rock wool on pore shape transition of autoclaved light weight concrete(ALC) was investigated with rock wool contents. As increasing the rock wool contents, the compressive strength and specific gravity decreased, and the pore size of ALC increased and pore shape transferred from a circle to an ellipse.

혼성집적회로용 후막저항체의 전기전도기구

구본급 大田産業大學校 1994 한밭대학교 논문집 Vol.11 No.0101

Elctrical conduction mechanisms of thick film resistors for HIC were investigated by frequency dependance on AC conductivity. Electrical conduction mechanisms of lower resistivity system(100Ω/sq.) sintered at 600-900℃ were all metallic-like conduction mechanism. In case of higher resistivity(10KΩ/sq.) system, the electrical conductions were very dependent on sintering temperature. When sintering temperature was 600℃, the electrical conduction mechanism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism changed from ionic to hopping conduction mechanism.

Sheet형 PTC 서미스터의 제조 및 물성

구본급,강병돈,정진기,김호기 한국마이크로전자및패키징학회 1995 하이브리드마이크로일렉트로닉스 Vol.2 No.2

In this paper, the sheet type PTCR thermistors based on BaTiO₃fabricated by tape casting method were investigated with electrical properties and microstructures. The composition of PTCR wis 89.9 BaTiO₃-0.1Sb₂O₃-10 CaTiO₃-0.05Mr₄O₂by mole percent. And organic system of slurry of were PVB, DBP, ethanol, toluene and fish oil. The sheet were sintered at 1325℃ and 1350℃ for 1hr. The characterization of the sintered sheet type specimen were conducted with SEM. resistance and impedance.

Ag-Glass계 후막도체에서 Ag 입자성장기구

구본급 大田産業大學校 1995 한밭대학교 논문집 Vol.12 No.0202

As a functions glass content and reaction conditions, the silver grain growth mechanism of Ag-bismuth-lead-borosilicate glass system thick film conductors were investigated. Grain growth mechanism of Ag varied with glass contents. When gless content was 2 wt.%, the grain growth mechanism of the silver was normal grain growth of solid state sintering. But in case of above 5 wt% glass in thick film conductor, silver grain growth mechanism was diffusion controlled Ostwald ripening of liquid phase sintering.

$SnO_2$박막저항의 전기적 특성에 미치는 첨가제의 영향

구본급,강병돈 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

프릿트 및 소결조건이 Ag 및 Ag/Pd계 후막도체의 미세구조와 전기적성질에 미치는 영향

구본급,김호기 한국세라믹학회 1988 한국세라믹학회지 Vol.25 No.6

As a function of the composition and content of frit, the electrical property of Ag and Ag/Pd thick film conductors were investigated with microstructure. With increasing sintering temperature in Ag-frit thick film conductors, electrical sheet resistivity decreased, but again increased above 80$0^{\circ}C$. And when frit contents is 5wt%, compact and homogenious microstructure can be obtained, then electrical sheet resistivity has minimum value. In Ag/Pd-frit film conductor, the electrical sheet resistivity decreased with increasing sintering temperature. The system which having frit with low softing point has lower sheet resistivity then to add high softening point frit.

$RuO_2$계 후막저항체의 미세구조와 전기적성질

구본급,김호기 한국세라믹학회 1990 한국세라믹학회지 Vol.27 No.3

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.