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김종욱,박충효,정현호,정성수,박태곤,Kim, Jong-Wook,Park, Choong-Hyo,Chong, Hyon-Ho,Jeong, Seong-Su,Park, Tae-Gone 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.7
In this paper, the characteristics of a thin-type ultrasonic motor generating elliptical displacements analyzed by FEM are presented, and then fabrication of the motor is then described. The structure of the motor consists of sixteen ceramic pieces attached to the upper and bottom surfaces of an elastic body. The principle of the motor is to apply alternating voltages which have a 90 phase difference to the attached ceramics, and then elliptical displacements are generated at four edges of the elastic body. Then the rotor is moved by the elliptical displacements. In the case of a ceramic thickness of 1.5, the highest speed was obtained at 79 kHz. In the case of a ceramic thickness of 2 mm, the highest speed was obtained at 77.5 kHz. Consequently, the speed and torque of the ultrasonic motor (USM) increased linearly with increasing applied voltage.
BTMSM/O<sub>2</sub> 유량변화에 따른 SiOCH 박막의 유전상수 특성
김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.
BTMSM/O<sub>2</sub> 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성
김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.
김종욱,황창수,박용헌,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Park, Yong-Heon,Kim, Hong-Bae 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.
김종욱,박충효,임정훈,정성수,김명호,박태곤,Kim, Jong-Wook,Park, Choong-Hyo,Lim, Jung-Hoon,Jeong, Seong-Su,Kim, Myong-Ho,Park, Tae-Gone 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9
A novel design of a simple square-frame USM (ultrasonic motor) was proposed. The stator of the motor consists of a square-frame shape elastic body and four rectangular plate ceramics. The four ceramics were attached to inner surfaces of the square frame elastic body. The same phase voltages were applied to the ceramics on horizontal surfaces, and 90 degree phase difference voltage were applied to the ceramics on vertical surfaces. To find a model that generates elliptical motion at outside of the stator, the finite element analysis program ATILA was used. The analyzed results were compared to the experimental results. As result, the model EL10EH3ET0.5CL4 which generates the maximum elliptical displacement was chosen by analyzing the resonance mode according to changes in frequency.
RF magnetron sputtering법으로 제조한 Al doped ZnO 박막의 산소함량과 압력변화에 따른 전기적 특성 변화
김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.4
The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.