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EFG법에 의한 ${\gamma}-6Bi_2O_3{\cdot}GeO_2$
김호건,유건종,Kei-Miyamoto 한국결정성장학회 1991 韓國結晶成長學會誌 Vol.1 No.2
The fundamental conditions for growing $r-6Bi_2O_3{\cdot}GeO_2$ (BGO) single crystal plates by EFG (Edge -defined Film-fed Growth) method, were investigated and the characterization, quality test were carried out for obtained BGO single crystal plates. The optimum growing conditions determined in this study were as follows: ${\cdot}$ temperature gradient: 22^{\circ}C/cm 광기능소자로 응용성이 넓은 전기광학결정 $r-6Bi_2O_3{\cdot}GeO_2$(이하 BGO로 약칭)을 EFG(Edge-defined Film-fed Growth)법에 의하여 판상단결정으로 육성하는 기초적 조건을 조사하였고 얻어진 판상단결정의 characterization 및 평가를 행하였다. 본 연구에서 얻어진 최적성장조건은 온도구배가 $22^{\circ}C$/cm 이었고 인상속도는 2.0mm/h이었다. 결정성장 최적조건에서 육성된 BGO결정은 제 2상의 석출이 없고 grain boundary가 존재하지 않으며 X선분석으로도 단결정임이 확인되었다. 육성된 판상단결정의 판면은 (100)면이었고 결정성장 방위는 <110>이었다. 육성된 판상단결정은 편광현미경하에서는 pore, void, inclusion, striation등의 성장결함이 없는 양질의 단결정이었으나 미세결함인 전위(dislocation)의 존재가 확인되었고 전위밀도는 $7.0{\times}105/cm^2$이었다.
황토와 다공성 규조토 필터에 의한 실내 오염 물질의 흡착 연구
김호건,Akhmadalieva Irodakho,남기우 한국산업융합학회 2020 한국산업융합학회 논문집 Vol.23 No.4
Environmental problems have showen over the past decades due to the rapid development of the world economy and the continued growth of the population. Ocher has been widely used for water treatment research, but few studies have been conducted on adsorption of air pollutants using ocher and porous diatomite earth for indoor air purification. In this study, ocher and diatomite earth were sintered with filters to remove indoor air pollutants. The four types of TMA, H2S, NH3 and CH3COOH were used to study the adsorption efficiency of ocher and porous diatomite filters. With the proper use of ocher, diatomite and copper catalysts, indoor air pollutants could be adsorbed. Alkaline substances (TMA and NH3) and acidic substances (H2S and CH3COOH) were able to adsorb at 120 and 90 minutes, respectively.
PT/TiN 전극에서 PBT(PbxBa₁-xTiO₃)박막의 성장과 유전체 특성
임성민,김옥경,홍석민,김호건 漢陽大學校 自然科學硏究所 1999 自然科學論文集 Vol.18 No.-
Pb와 Ba의 화학당량비를 조절하여 PbxBa₁-xTiO₃분말 시료를 제조하여 각각 700℃와 900℃에서 clacining과 sintering을 실시한 후 3inch 성형틀로 sputtering target를 제작하였다. MIM구조로 capacitor를 제작하기 위하여 하부전극을 Pt/TiN/SiO₂/Si로 사용하였고 제작한 target를 이용하여 RF sputtering방법으로 PBT박막을 증착하였다. 제작한 박막의 결정구조를 XRD로 분석한 후 AL을 상부전극으로 증착하여 축전기구조를 형성한 후 C-V와 I-V의 전기적 특성을 얻었다. 제작된 박막의 결정구조를 XRD 측정으로 확인한 결과 400℃ 이상의 가판온도에서 결정성장이 양호함을 보였다. 유전상수와 유전손실은 기판온도 600℃에서 Pb가 0.5 몰비일 경우 가장 낮다는 것을 알았다. I-V측정으로 전도기구가 낮은 전압에서 ohmic 거동을 보이고 높은 전압에서 SCL 거동을 보임을 확인할 수 있었다. PbxBa₁-xTiO₃powders were prepared by changing stoichiometry of Pb and Ba. After they were calcined and sintered at 700℃ and 900℃ respectively, PBT sputtering targets were made in 3inch mould. For MIM structure capacitors, Pt/TiN/SiO₂/Si were used for bottom electrodes and the PbxBa₁-xTiO₃thin films were sputtered on bottom electrodes. After analysed their structures by XRD, Al was evaporated on the BST films for MIM capacitor. and we obtained the electrical properties by measuring of C-V and I-V. We found that the structures of the films showed good crystallinity above 400℃ from the results of XRD measurements. The lowest dielectric constant and dielectric loss of films was obtained with 0.5molar ratio of Pb. In I-V behavior, we supposed that the conduction mechanism was Ohmic conduction in low voltage range and SCL conduction in high voltage range.
반도체 Wafer 공정용 불산 제어 밸브 모듈 개발에 관한 연구
김호건,유승현,오성훈,소병문 한국기계기술학회 2022 한국기계기술학회지 Vol.24 No.4
In this study, we intend to develop a control valve with oxidation resistance for hydrogen fluoride that can be applied to the semiconductor production process. Operated Valves currently in use is a form of assembling an air cylinder to the valve body. These valves generally have a cylinder body made of aluminum (Al), so they may corrode depending on the external environment, and the solution leaks along the rod inside the cylinder, causing damage to parts due to corrosion. To solve this problem, the valve plug shape was developed by devising and applying a plug using a valve different from the existing method, and it is possible to block the inflow of hydrogen fluoride into the valve control unit, thereby preventing damage to parts as well as maintaining stable valve operation.
γ-6Bi₂O₃·SiO₂δ-(Bi₂O₃)(Nb₂O) 系 配向性 複合多結晶體의 微細構造
김호건 漢陽大學校 基礎科學硏究所 1986 基礎科學論文集 Vol.5 No.-
??계의 融液을 一方向으로 凝固하여 高分解能의 畵像處理 素子로서 有用한 ??系 配向性 複合多結晶體를 作成하려고 하였다. 먼저 이 系의 相平衡圖를 作成하고 다음에 共晶組成의 融液을 100℃/㎝의 溫度勾配下에서 0.05~1.0㎝/h의 各種 速度로 一方向凝固하였다. 그 結果 모든 凝固速度에서 γ-6Bi₂O₃ㆍSiO₂結晶의 matrix중에 針狀의 ?? 結晶이 平行하게 等間隔으로 配列된 規則的인 構造의 複合多結晶體가 얻어졌다. 針狀結晶의 中心間距離(λ)와 凝固速度(R) 間에는 ??의 關係가 成立하였다. The melt of ?? system was unidirectionally solidified for the purpose of obtaining oriented composite polycrystal which is useful to the high resolution optical device. First, equilibrium phase diagram of the system was determined and then the melt of eutectic composition was solidified at rates of 0.15~1.0㎝/h under a thermal-gradient of 100/㎝. Composite polycrystals of regular structure, in which rod-like ?? crystals were arrayed in parallel and at same interval with γ-6Bi₂O₃ㆍSiO₂ crystal matrix were obtained. Between interrod spacing(λ) and solidification rate(R), the relation of ?? was found.