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≪난장이가 쏘아올린 작은 공≫에 나타난 스타일의 다원성과 미학적 혁신
정원채(Won Chai Jeong) 한국현대소설학회 2010 현대소설연구 Vol.- No.43
This thesis was analyzed quality of novel`s esthetics of ≪A Small Ball Shot Up by a Dwarf≫. Purpose of this study is investigate that style`s pluralism and esthetics`s innovation of ≪A Small Ball Shot Up by a Dwarf≫. `synchronism`s realization through transform of Time-space, and cubism of language`, `non-biological form and disgraceful esthetics`, `dissolution`s sign of dichotomous cognition, and trend of genre`s crossover`, `double sidedness of accept and criticize of modernity` were treated to in this aim. The second chapter, reconstitution of time-space and particularity of verbalism were studied. This novelist transform time-space in this novel intentionally. In this point is connected with cubism of language. The third scene, non-biological form and disgraceful esthetics were considered. Jo Se-Hui made form non-biologically for reveal to true and reality of understand by himself. And so on, he has command of disgraceful esthetics for disclose and criticism of ugly reality. Chapter four, dissolution`s sign of dichotomous cognition and trend of genre`s crossover were treated. This novelist showed variation dichotomous cognition, and across attempt of dichotomous cognition at the novel. In this point that was showed pluralism connected with trend of genre`s crossover. Finally in chapter five, double sidedness of accept and criticize to modernity were examined. Jo Se-Hui accept various stimulation of bourgeois modernity, criticized problem of modernity in his novel.
정원채 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere,C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of Rp and ΔRp between the modified Se of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.
정원채,유영범,이선주,문용택 대한상하수도학회 2014 상하수도학회지 Vol.28 No.4
Membrane backwashing waste shows seasonally different characteristics and it has bad settleability differently from general backwashing waste in water treatment plant. When chemicals was injected to membrane backwashing waste, the settleability was better than chemicals was not injected. However, when settled lower sludge was not discharged, flowing sludge continuously was concentrated over a certain surface and floatation penomena occurred according to flowing velocity. When the lower sludge was discharged continuously in the thickener to prevent floatation penomena of turbidity materials, the depth of sludge surface was the least and the settleability increased.
비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구
정원채,Jung, Won-Chae 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.11
For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.
A Study on Distributions of Boron Ions Implanted by Using B and BF2 Dual Implantations in Silicon
정원채 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.3
For the fabrication of PMOS and integrated semiconductor devices, B, BF2 and dual elements with B and BF2 can be implanted in silicon. 15 keV B ions were implanted in silicon at 7° wafer tilt and a dose of 3.0×1016 cm-2. 67 keV BF2 ions were implanted in silicon at 7° wafer tilt and a dose of 3.0×1015 cm-2. For dual implantations, 67 keV BF2 and 15 keV B were carried out with two implantations with dose of 1.5×1015 cm-2 instead of 3.0×1015 cm-2, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at 1,050°C for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the BF2+ implant are shallower than those for a single B+ and dual (B+ and BF2 +) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and BF2 + implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.